Kaneka Corporation

Kanegafuchi Kagaku Kogyo Kabushiki Kaisha

Kanera Corporation

Kiyokazu Akahori

Yasushi Nishikawa

Kazuhiro Ono

Mutsuaki Murakami

Hisayasu Kaneshiro

Masaru Nishinaka

Kan Fujihara

Katsunori Yabuta

Toshihisa Itoh

Kosuke Kataoka

Eiichiro Kuribayashi

Kazunari Iwamoto

Masasru Nishinaka

Hidehito Nishimura

Kuzuhiro Ono

A process includes the steps of: casting or coating a polyamic acid organic solvent solution on a support and drying the polyamic acid organic solvent solution thereon, so as to form a partially cured and/or partially dried polyamic acid film; dipping the polyamic acid film in tertiary amine or a solution of tertiary amine, or coating tertiary amine or a solution of tertiary amine on the polyamic acid film; and drying the film while imidizing the polyamic acid. In another process, a chemical converting agent and a catalyst are mixed in an organic solvent solution of polyamic acid. After casting and heating the mixture on a support, a partially cured and/or partially dried polyamic acid film is detached from the support. The film contains, with respect to the remaining volatile component, not less than 50 parts of catalyst, not more than 30 parts of solvent, and not more than 20 parts of chemical converting agent and/or a chemical converting agent derived component. The remaining amic acid is imidized and the film is dried.

Polyimide film and process for producing the same

A process for producing a filmy graphite includes the steps of forming a polyimide film having a birefringence of 0.12 or more and heat-treating the polyimide film at 2,400&#xb0; C. or higher.

Filmy graphite and process for producing the same

A polyamide acid solution and/or gel film is subjected to at least any one of the following processes: addition of a semiconducting inorganic filler, addition of a conductivity imparting agent, and formation of a conductive film. Thereafter, the polyamide acid contained in the polyamide acid solution or gel film is imidized. Thus, the obtained semiconducting polyimide film has surface and volume resistances satisfactorily controllable and less dependent on voltage, excellent mechanical properties, and a high elongation rate.

Semiconductive polymide film and process for production thereof

A polyimide film of the present invention is a polyimide film having a dynamic viscoelasticity whose tan &#x3b4; peak is located in a range of not less than 310&#xb0; C. but not more than 410&#xb0; C., and whose tan &#x3b4; value at 300&#xb0; C. is not more than 0.05, or a polyimide film prepared by copolymerizing (a) an acid dianhydride component including a biphenyltetracarboxylic dianhydride and a pyromellitic dianhydride, and (b) a diamine component, and the polyimide film having such an etching speed that one side thereof is etched with a 1N potassium hydroxide solution at an etching speed of 0.1 &#x3bc;m/minute (one side) or higher. The polyimide film of the present invention possesses film properties that are necessary for use in an electronic raw material for flexible printed circuit boards and the like, and is suitable as an electronic raw material.

Polyimide film and laminate having metal layer and same

Polyimide/metal laminates having a polyimide film and a metal layer laminated thereon, wherein the polyimide film contains titanium element and flexible print wiring boards with the use of the same are disclosed. The polyimide/metal laminates are excellent in adhesion under the ordinary conditions and, moreover, can sustain the adhesive strength at a high ratio after exposure to high temperature or high temperature and high humidity. Owing to these characteristics, these polyimide/metal laminates are appropriately usable in flexible print wiring boards, multi-layered print wiring boards, rigid flex wiring boards, tapes for TAP, semiconductor packages such as CFOs and multi chip modules (MCMs), magnetic recording films, coating films for aerospace materials and filmy resistance elements.

Polyimide/metal laminate, and electric/electronic equipment bases, magnetic recording bases, solar battery bases, coating film for aerospace materials and filmy resistance elements with the use thereof

A polyimide film according to the present invention satisfies Condition (1) in which a tear propagation resistance variation Cis not more than 1.0 g, and/or Condition (2) in which a swelling coefficient Cafter being dipped in an alkaline solution is not more than 20.0. By satisfying these conditions, workability of the polyimide film can be improved and working defects can be effectively prevented, thereby improving productivity of each step.

Polyimide film excellent in alkali etching processability and punchability

The present invention provides a flexible printed circuit which is free from curl, torsion and warpage due to temperature change and excellent flexural endurance. By using polyimide film having an average coefficient of thermal expansion of 1.0&#xd7;10to 2.5&#xd7;10cm/cm/&#xb0; C. in a temperature range of 100&#xb0; C. to 200&#xb0; C. and a stiffness value of 0.4 to 1.2 g/cm as the base film for the flexible printed circuit, a flexible printed circuit having excellent thermal dimensional stability and flexural endurance can be prepared.

Polyimide film for flexible printed board and flexible printed board using the same

In a step of polymerizing polyamic acid by mixing tetracarboxylic acid dianhydride and diamine and polycondensating the tetracarboxylic acid dianhydride and diamine under the presence of a polymerization-use solvent, a tetracarboxylic acid dianhydride slurry in which a tetracarboxylic acid dianhydride is dispersed in a dispersion medium is used. According to this, it is possible to directly manufacture a polyamic acid solution having a high concentration of polyamic acid more than or equal to 10% by weight. Especially, even if a tetracarboxylic acid dianhydride having low solubility in the polymerization-use solvent, it is possible to effectively manufacture a polyamic acid solution having high solids content, by a simple process and in a short time.

Manufacturing method of polyamic acid, and polyamic acid solution

There is provided a process for preparing a polyimide film by a method of casting a film, wherein bubble inclusion and unevenness in thickness are prevented without decrease in mechanical strength at the same time. It is an object of the present invention to provided a process for preparing a polyimide film characterized by extruding, casting and forming into a film a composition of a resin solution obtained by adding, to low viscosity varnish obtained by polymerizing a tetracarboxylic dianhydride component with a diamine component in a molar ratio of 1:1.01 to 1:1.05, or 1:0.95 to 1:0.99, a dehydrating agent in a molar ratio of at least one time and a chemically-imidizing catalyst in a molar ratio of at least half time based on 1 mole of the amic acid of the poly(amic acid) varnish.

Process for preparing polyimide film

POLYIMIDE/METAL LAMINATE, AND ELECTRIC/ELECTRONIC EQUIPMENT BASES, MAGNETIC RECORDING BASES, SOLAR BATTERY BASES, COATING FILM FOR AEROSPACE MATERIALS AND FILMY RESISTANCE ELEMENTS WITH THE USE THEREOF

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Otsu, Japan

Kiyokazu Akahori