Fujifilm Corporation

Kiyohiko Tsutsumi

Hideyuki Suzuki

Takashi Goto

Yoshiki Maehara

Takeshi Senga

Takashi Komiyama

Takehiro Kasahara

Kyohei Ogawa

According to an aspect of the invention, an imaging device includes a plurality of photoelectric conversion elements and a read-out portion. The photoelectric conversion elements are arranged above a substrate. The read-out portion reads out signal corresponding to charges which are generated from each of the photoelectric conversion elements. Each of the photoelectric conversion elements includes a first electrode that collects the charge, a second electrode that is disposed opposite to the first electrode, a photoelectric conversion layer that generates the charges and disposed between the first electrode and the second electrode, and an electron blocking layer that is disposed between the first electrode and the photoelectric conversion layer. Distance between the first electrodes of adjacent photoelectric conversion elements is 250 nm or smaller. Each of the electron blocking layers has a change in surface potential of &#x2212;1 to 3 eV from a first face to a second face.

Imaging device, method for fabricating imaging device, and imaging apparatus

A photoelectric conversion element comprises: a pair of electrodes; and an organic photoelectric conversion layer between the pair of electrodes, wherein one of the electrodes is a first electrode that collects electrons generated in the organic photoelectric conversion layer; the other one of the electrodes is a second electrode that collects holes generated in the organic photoelectric conversion layer; and the photoelectric conversion element further comprises a hole blocking layer that comprises silicon oxide and inhibits injection of holes into the organic photoelectric conversion layer from the first electrode while applying a bias voltage between the electrodes, the hole blocking layer being disposed between the first electrode and the organic photoelectric conversion layer, and an oxygen/silicon composition ratio of the silicon oxide is 0.5 or greater and 1.2 or less.

Photoelectric conversion element, solid-state image pickup device, and manufacturing method of the photoelectric conversion element

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Kanagawa, Japan

Kiyohiko Tsutsumi