Hitachi-kokusai Electric Inc.

Kokusai Electric Co., Ltd.

Kokusai Electric Corporation

Kiyohiko Maeda

Takashi Ozaki

Yoshiro Hirose

Tomoshi Taniyama

Takaaki Noda

Atsushi Sano

Yoshikazu Takashima

Shinya Morita

Yoshitomo Hashimoto

Kazuyuki Okuda

Norikazu Mizuno

Yoshinobu Nakamura

Kazuhiro Yuasa

Yuji Urano

Ryota Horiike

Osamu Kasahara

Sadao Hisakado

Takahiro Maeda

Hiroshi Unami

Satoshi Shimamoto

Atsushi Moriya

Takeo Hanashima

Ichiro Sakamoto

Kosuke Takagi

Shingo Nohara

Yasuaki Komae

Yasunobu Koshi

Naoto Nakamura

Naoki Matsumoto

Masanao Osanai

Takashi Shimahara

Ryuji Yamamoto

Yushin Takasawa

Masaaki Ueno

Tetsuya Kosugi

Kenji Kameda

Yosuke Ota

Masato Terasaki

Masashi Sugishita

Takashi Nakagawa

Naoharu Nakaiso

Akito Hirano

Sadao Nakashima

Kiyohisa Ishibashi

Akihiko Yoneda

Yasuhiro Megawa

Akihito Yoshino

Masaya Nishida

Hidehiro Yanagawa

Takahiro Miyakura

Masayuki Yamada

Satoshi Kakizaki

Keigo Nishida

Minoru Sakamoto

Ken-ichi Suzaki

Yuuji Urano

The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber.

Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and control program

There is provided a technique that includes: (a) forming a silicon germanium film in an amorphous state so as to embed an inside of a recess formed on a surface of a substrate, by supplying a first silicon-containing gas and a germanium-containing gas to the substrate at a first temperature; (b) raising a temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature; and (c) forming a silicon film on the silicon germanium film by supplying a second silicon-containing gas to the substrate at the second temperature, wherein in (c), the silicon germanium film as a base of the silicon film is crystallized while the silicon film is formed.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

Method for manufacturing semiconductor device, substrate-processing apparatus, and recording medium

A method of manufacturing a semiconductor device, includes: forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.

A method of manufacturing a semiconductor device, includes forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate.

A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.

Method of manufacturing semiconductor device and substrate processing apparatus

In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiHCl or MCS) gas to a substrate disposed in a processing chamber, (b) supplying a plasma-excited hydrogen-containing gas to the substrate disposed in the processing chamber, (c) supplying a plasma-excited or heat-excited nitrogen-containing gas to the substrate disposed in the processing chamber, (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate disposed in the processing chamber, and (e) performing a cycle including the steps (a) through (d) a predetermined number of times to form a silicon nitride film on the substrate.

Method of manufacturing semiconductor device and method of processing substrate and substrate processing apparatus

A method of manufacturing a semiconductor device includes forming a thin film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a source gas to the substrate, and supplying excited species from each of a plurality of excitation units provided at a side of the substrate to the substrate. Each of the plurality of excitation units generates the excited species by plasma-exciting a reaction gas. In supplying the excited species from each of the plurality of excitation units, an in-plane distribution of the excited species supplied from at least one of the plurality of excitation units in the substrate differs from an in-plane distribution of the excited species supplied from another excitation unit, other than the at least one excitation unit, among the plurality of excitation units, in the substrate.

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

Boat for substrate processing apparatus

A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type between a cleaning gas to be supplied inside the process chamber and a cleaning gas to be supplied inside the supply portion.

Method of manufacturing semiconductor device including removal of deposits from process chamber and supply portion

A method of manufacturing a semiconductor device includes conveying a first substrate provided with an opposing surface having insulator regions and a semiconductor region exposed between the insulator regions and a second substrate provided with an insulator surface exposed toward the opposing surface of the first substrate, into a process chamber in a state that the second substrate is arranged in to face the opposing surface of the first substrate, and selectively forming a silicon-containing film with a flat surface at least on the semiconductor region of the opposing surface of the first substrate by heating an inside of the process chamber and supplying at least a silicon-containing gas and a chlorine-containing gas into the process chamber.

Method of manufacturing a semiconductor device and substrate processing apparatus

Growing community of inventors

Toyama, Japan

Kiyohiko Maeda