Hitachi, Ltd.

Hitachi Maxell, Limited

Kiyoharu Kishimoto

Yuji Kikuchi

Hiroyuki Tsukamoto

Tomonori Kanai

Kouji Kitou

Ikuya Arai

Akitsuna Yuhara

Katashi Hazama

Koji Yamaguchi

Masahiro Eto

Ryuzo Fukao

Ryuuichi Someya

Yuji Yamashita

Shinichi Yamada

Takuya Imaide

Jun Yamada

Hiroshi Koizumi

Michitaka Ohsawa

Yuji Sano

Takeshi Hoshino

Yutaka Takami

Atsushi Yoshioka

Shinichi Arai

Isao Nakagawa

Shinichiro Fukushima

Eiichi Yamazaki

Kazunari Nakagawa

Yuji Fujita

Shuzo Matsumoto

Moritaka Taniguchi

Norio Hosaka

Shinya Iida

Hitoshi Yanagihara

Masaaki Kurosu

Hitoshi Yamadera

Hideo Abe

Yoshiharu Hino

Tomoko Ogawa

Toshihiro Yamanaka

Mariko Tanaka

An image acquisition apparatus includes an image pickup device that includes a plurality of pixels, and a filter layer that blocks propagation of an incident light ray which comes from an object side to the pixel side in accordance with an increase in incident angle of the incident light ray.

Image acquisition apparatus and biometric information acquisition apparatus

A semiconductor light-emitting device according to an embodiment of the present invention includes chip LEDs formed on a silicon submount, in which a wiring pattern having a chip connecting terminal portion connecting the chip LEDs, an external connecting terminal portion connecting an external unit, and a plurality of lead portions connecting a corresponding chip connecting terminal portion and a corresponding external connecting terminal portion is formed on the silicon submount, and an area of the chip connecting terminal portions is made larger than an area of a region where the chip connecting terminal portion overlaps with the chip LEDs. Accordingly, a semiconductor light-emitting device of high heat radiation property and heat resistance can be provided.

Semiconductor light-emitting device, semiconductor light-emitting module, and method of manufacturing the semiconductor light-emitting module

A semiconductor device has peripheral electrode pads formed on the periphery of a semiconductor chip, land pads comprising the first land pads and the second land pads formed on the semiconductor chip, and circuits formed in the semiconductor chip. The peripheral electrode pads are connected to internal circuits by internal lines. The first land pads are connected to the peripheral electrode pads by rewired lines. The second electrode pads, on the other hand, are connected to the internal circuits by internal electrode pads and internal lines, not by the peripheral electrode pads.

Semiconductor device

When an IC card module is used for a small portable information apparatus such as a portable telephone terminal, the module has a size much smaller than an ordinary IC card from the viewpoint that the apparatus is required to be small in size and weight. In the case of a small non-contact type card, there are problems that an antenna coil cannot secure its necessary surface area, a necessary power cannot be obtained for a signal to be transmitted or received, a communication distance from an external device becomes small. When the signal is transmitted and received via a booster coil provided between the external device and the antenna coil of the IC card module, the effective surface area of the antenna coil can be increased and the communication distance can be increased to a level as large as it can practically avoid involvement of any problem.

Portable information processing apparatus

A semiconductor chip of rewiring layer-integral type capable of preventing a maloperation by noise and a deterioration of communication characteristics and a semiconductor device with excellent communication characteristics; the semiconductor chip, wherein a rewiring layer () is formed on a circuit formed surface () through an insulating layer () so as to form an antenna coil () with the rewiring layer (), the antenna coil () is formed around the periphery of an analog circuit () on the circuit formed surface () by avoiding forming on the analog circuit (), the analog circuit () may be formed by collecting analog circuits to be formed in the semiconductor chip (A) therein, may be one of the particularly noise-susceptible analog circuits such as a power circuit, a calculation amplifier, a comparison amplifier, an RF receiving part, an RF transmitting part, an RF synthesizer part, and a voltage build-up circuit and an amplifying circuit forming a part of a memory part, or may be a coil provided in a part of the analog circuit formed in the semiconductor chip (A).

Semiconductor chip and semiconductor device using the semiconductor chip

For producing a semiconductor module, an electrically insulating layer and an electrically conductive layer are formed on a Nickel-base metal film over a metallic surface, the electrically conductive layer is connected electrically to an electric element through an electrically conductive joint arranged between the electric element and the electrically conductive layer, at least a part of the electric element and at least a part of the electrically conductive joint are covered with a molding resin, and subsequently, the Nickel-base metal film is removed from the metallic surface so that a combination of the Nickel-base metal film, the electrically insulating layer, the electrically conductive layer, the electrically conductive joint and the molding resin is separated from the metallic surface.

Semiconductor module and producing method therefor

A display apparatus capable of receiving and displaying video signals which differ in scanning frequencies or resolutions. The display apparatus includes an input section for receiving at least one video signal and a conversion unit for converting at least one of the frequency and resolution of the at least one received video signal so as to be within predetermined higher ranges thereof. A display unit enables display of the converted received at least one video signal.

Display apparatus

The present invention is a color correction system including an imaging apparatus which inputs or outputs an image signal from a signal processor into or from an image device such as an input device such as a scanner or a camera or an output device such as a display device or a print device and which is constituted so as to correct colors by inputting or outputting image signals via a color converter, the conversion characteristic of which can be controlled according to a variation in the setting status or use environment of the imaging apparatus and faithful color reproduction can be realized between a plurality of imaging apparatuses having different characteristics.

Color correction system of imaging apparatus

Disclosed is a surface acoustic wave transmission device comprising a piezoelectric substrate provided thereon with an input and output transducers for transmitting and receiving the surface acoustic wave, a package for accommodating the piezoelectric substrate, and an adhesion layer for fixing the bottom of the piezoelectric substrate to the ground plane of the package. The adhesion layer is made to have a thickness of .lambda..sub.R /2.6 or more wherein .lambda..sub.R : is the wave length of the surface acoustic wave at the main lobe of the operating frequency, so that unnecessary waves caused by bulk wave components are absorbed.

Surface acoustic wave transmission device for a low frequency signal

A surface acoustic wave device, a method for manufacturing the same and a manufacturing equipment therefor are disclosed. In the surface acoustic wave device having functional elements such as input and output interdigital electrodes of Al, Al-Si alloy or Al-Cu-Si alloy thin film strips and a grating type reflector, arranged on a piezoelectric substrate and any other bus conductors arranged on the same substrate, at least a portion of the functional elements and the bus conductors having a high frequency metal strip having a line width of no more than 2 .mu.m, at least the metal strip having the width of no more than 2 .mu.m has a film thickness of no less than 0.25 .mu.m at least a portion thereof but no more than an upper limit of an effective film thickness determined by a required characteristic of the surface acoustic wave device, whereby a transfer characteristic of the surface acoustic wave device is compensated and controlled, for example, a reflection efficiency of a grating type reflector is improved or a loss due to a D.C. resistance of the input and output electrodes is reduced.

Surface acoustic wave device and method for manufacturing the same

A surface acoustic wave device is provided with plural sets of input and output transducers arranged on a piezoelectric substrate with the input transducers and the output transducers being connected electrically in parallel, respectively. In order to minimize a loss which occurs due to the parallel connections of the input and output transducers, aperture dimensions of either the input transducers or the output transducers are selected such that static capacitances of the respective transducers are equal.

Surface acoustic wave device

In a preferred embodiment, a surface acoustic wave device comprises a piezoelectric substrate, a first electrode formed on the substrate and acting to convert an electrical signal into a surface acoustic wave, and second and third electrodes formed on the substrate and acting to convert the surface acoustic wave into an electrical signal. The second and third electrodes are disposed at different distances from the first electrode and connected electrically with each other. Electrode fingers of the second electrode are arranged in a relationship of the opposite polarity with respect to those of the third electrode so as to cause peaks in the constant frequency interval multi-peak frequency characteristics of the device acting as a filter to take place at frequencies which are (integer+1/2) times the constant frequency interval .DELTA.f. In another preferred embodiment, a plurality of surface acoustic wave device units are formed on a common piezoelectric substrate. Respective units include a set of first, second and third electrodes and operate at different frequency bands which partly overlap. The distance between the first electrode and the second electrode or the third electrode is determined in the respective units such that the delay time due to the propagation of the surface acoustic wave between the input and output electrodes is equal in the respective units and the output voltage of the output electrode is in phase in the respective units, thereby providing accurate peak frequencies over the whole frequency band at which the surface acoustic wave device operates.

Growing community of inventors

Ibaraki, Japan

Kiyoharu Kishimoto