Toyota Jidosha Kabushiki Kaisha

Kiyoharu Hayakawa

Takashi Okawa

Atsushi Onogi

Hiroomi Eguchi

Masayasu Ishiko

Masato Taki

Masahiro Kawakami

A semiconductor device includes a semiconductor layer; a first type of a first semiconductor element that is arranged in a first element region of the semiconductor layer, has first and second main electrodes, and switches current; and a second type of a second semiconductor element that is arranged in a second element region of the semiconductor layer, has third and fourth main electrodes, and freewheels the current. The first and second element regions are adjacent in a direction orthogonal to a direction in which current flows, and are formed in a loop shape over the entire element region when the semiconductor layer is viewed from above. The first main electrode is electrically connected to the third main electrode, and the second main electrode is electrically connected to the fourth main electrode. When the semiconductor layer is viewed from above, a ratio of a length of the first main electrode to a length of the second main electrode is larger than a ratio of a length of the third main electrode to a length of the fourth main electrode.

Semiconductor device

A diodecomprises an SOI substrate in which are stacked a semiconductor substrate, an insulator film, and a semiconductor layer. A bottom semiconductor region, an intermediate semiconductor region, and a surface semiconductor regionare formed in the semiconductor layer. The bottom semiconductor regionincludes a high concentration of n-type impurity. The intermediate semiconductor regionincludes a low concentration of n-type impurity. The surface semiconductor regionincludes p-type impurity.

Lateral SOI semiconductor devices and manufacturing method thereof

Growing community of inventors

Obu, Japan

Kiyoharu Hayakawa