Canon Kabushiki Kaisha

Other

Cannon Kabushiki Kaisha

Kiyofumi Sakaguchi

Takao Yonehara

Kazutaka Yanagita

Nobuhiko Sato

Kazuaki Ohmi

Shoji Nishida

Kazuaki Omi

Kenji Yamagata

Katsumi Nakagawa

Yukiko Iwasaki

Akira Fujimoto

Mitsuharu Kohda

Takeshi Ichikawa

Noritaka Ukiyo

Hirokazu Kurisu

Masaaki Iwane

Mamoru Miyawaki

Takanori Watanabe

Hajime Ikeda

Masaru Sakamoto

Noa Sumida

Toru Koizumi

Shigetoshi Sugawa

Takashi Moriyama

Hiroshi Mizuno

Shunsuke Inoue

Akira Ishizaki

Kohei Nagayama

Kenji Nakagawa

Tetsuya Shimada

Tetsunobu Kohchi

Kunio Watanabe

Junichi Hoshi

Kazuya Notsu

Nobuo Kawase

Tadashi Atoji

Masakazu Harada

Fumio Uehara

Masahiro Kobayashi

Hiroshi Matsuda

Akira Okita

Takanori Suzuki

Tatsuhito Goden

Yasuyoshi Takai

Yojiro Matsuda

Noriyuki Shikina

Etsuro Kishi

Satoru Shiobara

Tsutomu Ikeda

Shigeki Kondo

Masashi Kitani

Nobutaka Mizuno

Atsushi Shiozaki

Yasutomo Fujiyama

Eiichi Takami

Yasushi Iwakura

Michiko Johnson

Kazuo Kokumai

Yasuhiro Naruse

Satoshi Matsumura

Jun Nakayama

Toru Takisawa

Yuushi Ichinose

Senju Kanbe

Mitsuhiro Ishii

Toshikazu Miyakogawa

A detector includes a semiconductor layer included in a detection region and a peripheral region, and having a first surface and a second surface opposite to the first surface, and a wiring structure included in at least the detection region, and disposed between a space on the first surface side with respect to the semiconductor layer and a space on the second surface side with respect to the semiconductor layer, wherein a thickness of the semiconductor layer in at least a part of the detection region is smaller than a thickness of the peripheral region including the semiconductor layer, and the thickness of the semiconductor layer is larger than a distance between the first surface in the detection region and the space on the first surface side, and a distance between the second surface in the detection region and the space on the second surface side.

Energy ray detector, detection apparatus, and equipment

A solid-state image sensor is provided. The solid-state image sensor includes a substrate. The substrate includes an electrode layer, an insulating layer arranged on the electrode layer, and a semiconductor layer arranged on the insulating layer. The semiconductor layer includes a first semiconductor region of a first conductivity type, a second semiconductor region configured to accumulate charges generated by photoelectric conversion, the second semiconductor region being arranged on the first semiconductor region and having a second conductivity type opposite to the first conductivity type, and a third semiconductor region of the second conductivity type to which the charges accumulated in the second semiconductor region are transferred.

Solid-state image sensor

The present invention provides a light-emitting device including a pixel block including light-emitting elements disposed on a long substrate and aligned in the longitudinal direction of the substrate, pixel circuits connected to the light-emitting elements, a control signal line connected to the pixel circuits, and a pixel block select circuit connected to the control signal line and configured to output a control signal to the pixel circuits. The pixel circuits are divided into a plurality of groups. The control signal line includes first and second interconnection portions. The first interconnection portion is disposed along the longitudinal direction of the substrate and connected to the pixel circuits. The second interconnection portion is disposed in a region between the groups and connected to the pixel block select circuit. The first interconnection portion and the second interconnection portion are connected to each other in the region between the groups.

Light-emitting device and image forming apparatus

Provided is an organic light emitting device, including: a lower electrode; an upper electrode and a substrate having an electrode pad portion, in which when an angle formed by a slant in section of a film end in a region between the lower electrode and the electrode pad portion and a surface of the substrate is given as &#x3b8;, Formula (1) and Formula (2) are satisfied; and when an angle formed by a slant in section of a film end in at least a part of other regions than the region between the lower electrode and the electrode pad portion and the surface of the substrate is given as &#x3b8;, Formula (3) and Formula (4) are satisfied.tan(&#x3b8;)=&#x2003;&#x2003;(1)tan(&#x3b8;)&#x3c;0.2&#x2003;&#x2003;(2)tan(&#x3b8;)=&#x2003;&#x2003;(3)tan(&#x3b8;)&#x2267;0.2&#x2003;&#x2003;(4)

Organic light emitting device

A display device includes an array of pixels including a plurality of organic EL elements each having a pair of electrodes and an organic compound layer including a light-emitting layer and disposed between the pair of electrodes and includes a protective layer disposed on the plurality of the organic EL elements. The protective layer has a first protective layer made of an inorganic material, a second protective layer made of a resin material and disposed on the first protective layer, and a third protective layer made of an inorganic material and disposed on the second protective layer. The second protective layer includes lenses for diverging at least part of light emitted from the light-emitting layer. The lenses have an elongated concave shape.

Display device

An optical absorption layer having a plurality of openings corresponding to lenses is provided between a lens array and a first electrode. An edge of each of the openings is provided such that light entering in a normal direction of a substrate and traveling through an area where the corresponding lens has a maximum inclination angle is blocked.

Display device and image-information processing apparatus equipped with the same

A method of manufacturing a semiconductor chip including an integrated circuit and a through-electrode penetrating a semiconductor layer includes the steps of preparing a first substrate including a release layer and a semiconductor layer formed on the release layer; forming an integrated circuit in the semiconductor layer; forming, in the semiconductor layer, a hole or groove having a depth that does not reach the release layer; filling the hole or the groove with an electrical conductor; bonding a second substrate to the semiconductor layer to form a bonded structure; separating the bonded structure at the release layer to prepare the second substrate to which the semiconductor layer is transferred; and removing at least a portion of the reverse surface side of the semiconductor layer exposed by the separation to expose the bottom of the electrical conductor.

Method of manufacturing semiconductor chip

A highly moisture-resistant liquid crystal display apparatus and a manufacturing method thereof suppresses display deterioration due to the occurrence of image retention without gap controllability and alignment-stability maintenance. The liquid crystal display apparatus includes: a first sealing member arranged at an outer periphery of a liquid crystal layer sandwiched between a pair of substrates; and a second sealing member arranged at an outer periphery of the first sealing member in contact with the pair of substrates. The second sealing memberis formed from an alkylsiloxane compound as a main ingredient which is formed into an inorganic film by irradiation with an ultraviolet radiation. The alkylsiloxane compound is a di-alkylsiloxane compound or di-methyl-siloxane compound.

Method of manufacturing a display apparatus by bonding together a pair of substrates with a first sealing member, on the outer periphery of which is arranged an alkylsiloxane compound irradiated with ultraviolet radiation

A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.

Method of manufacturing semiconductor device

At least one of the pixels has a first region and a second region that are the same in color but different in viewing angle characteristic, and includes a switching circuit configured to independently turn on or off each of the organic EL elements provided in the respective first and second regions.

Display apparatus using separate organic electroluminescent elements in a single pixel

A display module includes a display panel, a unit disposed on an outer side of the display panel, and an adhesive sheet with which the display panel and the unit are stuck together. The adhesive sheet has a first adhesive surface adhering to the display panel and a second adhesive surface adhering to the unit. The edge of the first adhesive surface and the edge of the second adhesive surface are displaced from each other in the adhesive surface direction.

Display module

There is provided a display apparatus that can improve the protective function and light utilization efficiency of organic EL devices and that has a simple structure. The display apparatus includes a plurality of organic EL devices formed on a substrate and a protective layer formed on the organic EL devices. The protective layer includes a first protective layer made of an inorganic material, a second protective layer made of a resin and having a microlens formed therein, and a third protective layer made of an inorganic material.

Display apparatus

An organic EL display apparatus includes a plurality of pixels and a lens array which includes a light-condensing lens portion and a flat portion disposed on the light-emitting surface side of each pixel. Each pixel includes a light-emitting layer contained between a pair of electrodes. Part of the light emitted from the light-emitting layer is condensed by the light-condensing lens portion. A top surface of the light-condensing lens portion overlies the light-emitting region, and a part of the light-condensing lens portion is located outside the light-emitting region.

Organic electroluminescence display apparatus

A holographic memory system includes a spatial light modulator having multiple modulators for spatially modulating at least a portion of a light beam emitted from a light source and rendering it as an information light beam, and a light sensing device for reading the information light beam taken out of a recording medium. The spatial light modulator and the light sensing device are integrally formed on the same substrate.

Spatial light modulator and light sensing device provided on the same substrate

Growing community of inventors

Yokohama, Japan

Kiyofumi Sakaguchi