Pioneer Electronic Corporation

Pioneer Corporation

Other

Sumitomo Electric Industries, Limited

Dowa Mining Co., Ltd.

Pioneer Electric Corporation

Kiyofumi Chikuma

Sota Okamoto

Yoshiaki Watanabe

Nong Chen

Kiyoshi Takei

Atsushi Onoe

Ayako Yoshida

Hiroyuki Ota

Naohiro Tanno

Teruo Toma

Yoshinori Kimura

Mamoru Miyachi

Takafumi Uemiya

Yuzo Tasaki

Hirofumi Kubota

Mitsuru Nishitsuka

Koyoshi Takei

Takashi Yoshino

Minoru Imaeda

Katsuhiro Imai

Yasuhiro Hattori

Mamoru Sato

Shuji Yoshizawa

Akira Mizoguchi

Naota Uenishi

Toshiyuki Tanaka

Teruo Tohma

Mamoru Satoh

Yasuji Ogaki

This invention provides a semiconductor laser device and method of manufacture with a small interval between light emitting points of laser lights. A first light emitting element having a semiconductor substrate and a laser oscillation section, and a second light emitting element having a laser oscillation section, are brought together with a ridged waveguide of the laser oscillation section facing the ridged waveguide of the laser oscillation section, and then bonded together by virtue of SOGs having a small thickness. A conductive wiring layer electrically connected with an ohmic electrode layer on the ridged waveguide, and a wiring layer electrically connected with an ohmic electrode layer on the ridged waveguide, are arranged to extend until the insulating layer on the semiconductor substrate. Further, the ohmic electrodes and are formed on the bottom surface of the semiconductor substrate and the top surface of the laser oscillation section, respectively.

Semiconductor laser device and method of manufacturing the same

An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layerof a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrateis provided on the grown layer. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

Semiconductor light-emitting device and fabrication method thereof

An integrated semiconductor light-emitting device suitable for being mounted on a pickup is provided. The integrated semiconductor light-emitting device has a first laser part stacked on a semiconductor substrate and a projection-shaped second laser part formed by stack in thin-film-layer form. The second laser part is fitted into a trench formed adjacent to the first laser part in the semiconductor substrate. At least the first and second laser parts and the trench are bonded together through a metal bonding layer. An emission spot of the first laser part and an emission spot of the second laser part are located away in approximately the same horizontal direction perpendicular to the direction of the stack of the first and second laser parts.

Integrated semiconductor light-emitting device and method for manufacturing same

An optical disk from which information is played back when the optical disk is irradiated with a playback light beam which does not pass through a photochromic layer before its transparency is changed by irradiation with a recording light beam, but passes through the photochromic layer after its transparency is changed, including: the photochromic layer which is initialized with initialization light and also maintains a change in its transparency caused by irradiation with a recording light beam after end of the irradiation; and a fluorescent layer for emitting, as detection light, light of a frequency different from the frequency of the playback light beam when the fluorescent layer is irradiated with the playback light beam, wherein the photochromic layer and the fluorescent layer are formed in order in the direction in which the recording light beam and the playback light beam are irradiated.

Information recording medium, information recording apparatus, information recording method, information playback apparatus, information playback method, recording program recording medium, and playback program recording medium

A DFB type semiconductor laser device including a laser substrate, a grating layer, an insulating layer and an electrode layer, which are laminated in the given order. The insulating layer includes a through groove or grooves extending to the grating layer in a direction in which a resonator of the laser device is formed, and the electrode layer contacts the grating layer and a clad layer.

Distributed feedback type semiconductor laser device

An object of the present invention is to provide a semiconductor laser device which is capable of selectively emitting two kinds of laser light of light emitting characteristics differing in wavelength, light emission point, beam shape, light emission power, longitudinal mode and so on, by switching the direction of the voltage applied to the device. There is provided the semiconductor laser device including first and second laser units, each unit having a ridge type structure and each unit comprising a multilayer structure body made of at least an n-type semiconductor layer, an active layer and a p-type semiconductor layer deposited in this order, and a p-side electrode and an n-side electrode, wherein the p-side electrode and the n-side electrode of the first laser unit and the n-side electrode and the p-side electrode of the second laser unit are electrically connected, respectively.

Semiconductor laser device providing laser light of two wavelengths and method of fabricating the same

A semiconductor laser includes an active layer made of semiconductor; a ridge stripe having a cladding layer formed on the active layer and a contact layer formed on the cladding layer to protrude from the active layer; a pair of gratings each having a periodic structure in a longitudinal direction of the ridge stripe having a plurality of grooves each extending from side walls of the ridge stripe on flat portions in both sides of the ridge stripe; and absorbing layers covering the surfaces of the grooves of gratings to absorb excited light.

Ridge type semiconductor laser of distributed feedback

A method for fabricating a nitride semiconductor laser device having crystal layers each made of a group III nitride semiconductor (Al Ga ) In N (0&lE;x&lE;1, 0&lE;y&lE;1) layered in order on a ground layer (Al Ga ) In N (0&lE;x&prime;&lE;1, 0&lE;y&prime;&lE;1). The method including a step of forming a plurality of crystal layers each made of group III nitride semiconductor on a ground layer formed on a substrate such as sapphire; a step of applying a light beam from the substrate side toward the interface between the substrate and the ground layer thereby forming the decomposed-matter area of a nitride semiconductor; a step of separating the ground layer carrying the crystal layers from the substrate along the decomposed-matter area; and a step of cleaving the ground layer thereby forming a cleavage plane of the crystal layers.

Nitride semiconductor laser and method of fabricating the same

A method of manufacturing a ridge-shaped 3-dimensional waveguide, has the steps of: forming a crystal film made of a second ferroelectric oxide non-linear crystal having a refractive index higher than that of a substrate made of a first ferroelectric oxide non-linear crystal on the substrate; forming a metal film on the crystal film; forming a mask by etching the metal film; and forming a ridge portion by selectively removing the crystal film through the mask by a dry etching method.

Method of manufacturing a ridge-shaped three dimensional waveguide

There is provided a method of manufacturing a ridge type LC-DFB semiconductor laser in which a laser substrate having a cladding layer made of a material for a ridge stripe formed on an active layer made of semiconductor. A stripe mask is formed on the cladding layer to form two lateral flat portions from the cladding layer, by a selective wet etching, so as to form a ridge stripe protruding therefrom and having a flat top portion at which the stripe mask capped. A grating mask is formed on the two lateral flat portions, side walls of the ridge stripe and the stripe mask. The grating mask has a periodic structure in the direction in which the ridge stripe extends. The two lateral flat portions and the side walls of the ridge stripe are dry-etched through the grating mask and then the two lateral flat portions and the side walls of the ridge stripe are wet-etched to form a grating of the material for the ridge stripe on the two lateral flat portions, the side walls of the ridge stripe and the active layer, so as to define a bracket grating portion adjacent to the ridge stripe.

Ridge type semiconductor laser of laterally-coupled distributed feedback and method of manufacturing the same

A description is provided of a ridge-structure DFB semiconductor laser and a method of manufacturing the laser wherein an optical absorption loss by a metal electrode formed on a grating can be avoided. The DFB semiconductor laser includes: a ridge protruding from flat portions of a cladding layer which is formed on an active layer, the ridge includes a cladding layer and a contact layer sequentially formed on the active layer; a plurality of metal strips having a predetermined periodicity along a longitudinal direction of the ridge and extending from a surface of at least one of the flat portions to a top of the ridge; and an insulating layer formed on the plurality of metal strips at the top of the ridge.

Ridge-structure DFB semiconductor laser and method of manufacturing the same

An optical transmitter and receiver module de-multiplexes a multi-wavelength optical signal into at least an optical signal of one wavelength band, and receives and transmits the signal. The module includes a first substrate, with a cleavage plane, for supporting input and output wave guides which intersect each other at a portion on the cleavage plane and extend from the portion of intersection at an equal angle with respect to normal at the portion on the cleavage plane. The module also includes an interference filter that is in contact with the cleavage plane on the portion of intersection of the input and output wave guides of the first substrate. Further, the module includes a second substrate, with a cleavage plane in contact with the interference filter, for supporting a transmit/receive wave guide having receiver and transmitter wave guides which extend from the vicinity of the portion of intersection and are separated from each other.

Optical transmitter/receiver module and method of manufacturing the same

A GaN based semiconductor laser device which can prevent guided mode light emitted from the active layer from leaking through the cladding layer to the underlying layer without making the cladding layer excessively thick is provided. The device is characterized in that if an n-type cladding layer, a waveguide layer and a p-type cladding layer are collectively defined as a first three-layer waveguide path and a substrate, an underlying layer and an n-type cladding layer are collectively defined as a second three-layer waveguide path, then effective refractive indices of light propagating through the first and second three-layer waveguide paths are set different from each other.

Gallium nitride based semiconductor light emitting device

A surface acoustic wave device includes a crystalline substrate with a structure selected from the group consisting of the perovskite structure, the spinel structure, and the rock salt structure. The device also includes a thin piezoelectric crystalline film having the perovskite structure and deposited on the crystalline substrate by chemical vapor deposition, and an electrode means for generating a surface acoustic wave on the thin piezoelectric crystalline film. In the device, a surface of the crystalline substrate on which the thin piezoelectric crystalline film is deposited is a mirror surface inclined at an offset angle &thgr; from the (001) plane of the crystalline substrate, and the electrode means have electrode fingers arranged in parallel to each other so that a surface acoustic wave propagates along one direction of crystalline axes of the thin piezoelectric crystalline film.

Surface acoustic wave device and method of manufacturing the same

An optical transmitter and receiver module de-multiplexes a superimposed optical signal into which at least a first and second wavelength band are superimposed, and receives and transmits an optical signal of the first wavelength band. The module includes an input/output wave-guide having an outer end portion and inner end portion for inputting superimposed optical signals, a receiver portion for receiving optical signals of the first wavelength band, an output wave-guide having an outer end portion and inner end portion for outputting optical signals of the second wavelength band, and a transmitter portion for transmitting the optical signals of the first wavelength band.

Growing community of inventors

Tsurugashima, Japan

Kiyofumi Chikuma