Samsung Electronics Co., Ltd.

Kiwon Park

Inho Kim

Jonghyun Lee

Byungchul Choi

Taehun Kim

Hyunsoo Kim

Sungwook Lee

Jinsu Park

Namsung Kim

Jaeyoon Kim

Geunwoo Ko

Suyeol Lee

Daemyung Chun

Sungjoon Kim

Seungbeom Lim

Taeha Jun

Kongsik Youn

Sangkyoon Kim

Daeyeop Han

Shiyoung Lee

Chiyoon Lee

Youngsub Shin

A ventilating apparatus includes a panel, a motor, a circuit assembly, and the apparatus stops an operation of the motor and notify a user when the panel is opened independently of a specific driving condition. The circuit assembly includes a switch which is closed when the panel is coupled to a body, and opened when at least a part of the panel is separated from the body, a motor of which an operation is stopped when the switch is opened, and a microcomputer which is connected to the switch and outputs a notification signal in response to the opening of the switch.

Ventilating apparatus, circuit assembly and control method of the same

A semiconductor light emitting device is provided. The semiconductor light emitting device includes a plurality of light emitting structures, each of which includes a first surface and a second surface, a plurality of embossed portions provided on the first surface; a partition wall structure provided on the first surface of the plurality of light emitting structures and including a plurality of partition walls which define a plurality of pixel spaces; and a fluorescent layer provided in the plurality of pixel spaces. A bottom surface of the partition wall structure contacts the plurality of embossed portions.

Semiconductor light emitting devices and partition wall structure, and methods of manufacturing the same

A light emitting device includes a printed circuit board (PCB) including a connection pad, a base substrate mounted on the PCB and including a pixel region and a pad region, light emitting structures arranged on the pixel region, a barrier rib structure disposed on the pixel region and disposed at a vertical level different from the light emitting structures, the barrier rib structure including barrier ribs connected with each other to define each of pixel spaces, a phosphor layer filling each pixel space, a dam structure surrounding the barrier rib structure, a pad disposed on the pad region and adjacent to at least one side of an outer boundary of the light emitting structures, a bonding wire connecting the connection pad to the pad, and a molding structure covering the pad, the connection pad, the bonding wire, and at least a portion of the dam structure.

Light emitting device and method of manufacturing the same

A semiconductor light emitting device including a semiconductor laminate having first and second surfaces, the semiconductor laminate including first and second conductivity-type semiconductor layers, and an active layer between the semiconductor layers; a partition structure on the first surface, the partition structure having a window defining a light emitting region of the first surface of the semiconductor laminate; a wavelength converter in the window, the wavelength converter being configured to convert a wavelength of light emitted from the active layer; and a first electrode and a second electrode on the second surface of the semiconductor laminate and respectively connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the semiconductor laminate includes a plurality of first patterns arranged in the light emitting region of the first surface, and a plurality of second patterns arranged in a covered region of the first surface contacting the partition structure.

Semiconductor light emitting device

Provided a manufacturing method of a semiconductor light emitting device including forming a plurality of light emitting cells that are separated on a first substrate, forming a first planarization layer by providing an insulating material on the plurality of light emitting cells, forming a second planarization layer by providing a photoresist on the first planarization layer to have a flat upper surface, and soft baking the photoresist, and dry etching the second planarization layer to a predetermined depth to expose a portion of the first planarization layer provided on the plurality of light emitting cells, and a portion of the second planarization layer remaining between the plurality of light emitting cells on the first planarization layer, wherein forming the second planarization layer and dry etching are repeated at least once to remove the portion of the second planarization layer provided between the plurality of light emitting cells.

Manufacturing method of semiconductor light emitting device

Growing community of inventors

Suwon-si, South Korea

Kiwon Park