Tokyo Electron Limited

Kiwamu Ito

Yamato Tonegawa

Takeshi Kobayashi

Takeshi Oyama

Takeshi Ando

Keiko Hosoe

Yuki Tanaka

A film forming method for forming a silicon nitride film on a substrate, includes supplying a silicon-containing gas into a processing chamber accommodating the substrate, and after the supplying the silicon-containing gas, supplying a nitrogen-containing gas into the processing chamber accommodating the substrate. An internal pressure of the processing chamber during the supplying the nitrogen-containing gas is set higher than an internal pressure of the processing chamber during the supplying the silicon-containing gas.

Film forming method

A plasma generating apparatus includes: an electrode pair including a first plasma electrode and a second plasma electrode that are arranged to face each other; an RF power supply that supplies an RF power to the electrode pair; and a matching unit provided between the RF power supply and the electrode pair. The matching unit includes: a first variable capacitor and a second variable capacitor that are connected in parallel with respect to a load between the electrode pair; a coil connected in series with the first plasma electrode; and a capacitor connected in series with the second plasma electrode.

Plasma generating apparatus, plasma processing apparatus, and plasma processing method

A substrate processing method for forming a nitride film on a substrate, includes: a raw material gas supply step of supplying a raw material gas containing an element to be nitrided; a hydrogen gas supply step of, after the raw material gas supply step, supplying a hydrogen gas activated by plasma; a thermal nitriding step of supplying a first nitriding gas containing nitrogen activated by heat and nitriding the element; and a plasma nitriding step of supplying a second nitriding gas containing nitrogen activated by plasma and nitriding the element.

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Yamanashi, Japan

Kiwamu Ito