Tokyo Electron Limited

Kiwamu Fujimoto

Takashi Fuse

Tomoyo Yamaguchi

Masanobu Honda

Kazuya Nagaseki

Akinori Kitamura

Takashi Enomoto

Nobuhiro Wada

Akiteru Koh

Hiroharu Ito

An object to be process has a structure having an SiC filmand an organic Si-low dielectric constant filmformed on the SiC film. The SiC filmis etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant filmas a mask. The etching gas contains CHFor CHF.

Method for etching an object to be processed

A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with Hplasma to improve plasma resistance of the organic layer.

Plasma processing method

An object to be processed has a structure having an SiC film and an organic Si-low dielectric constant film formed on the SiC film. The SiC film is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film as a mask. The etching gas contains CHFor CHF.

Method for etching object to be processed

The insulation film etching method according to the present invention prevents the pause of etching an insulation film while ensuring a good anisotropic (vertical) configuration and high selectivity to both the mask and the base film. When the first step plasma etching using CHF/Ar/Nmixed gas is ended, Ar gas as a purging gas is fed into a processing vessel from an Ar gas supply sourcewith the plasmas extinguished, whereby residual hydrogen and hydrogen compounds in the processing vesselare whirled by the purging gas to be discharged through an exhaust portand through an exhaust pipeWhen the purging step is completed, the second step plasma etching is performed with CF/Ar/Nmixed gas.

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Nirasaki, Japan

Kiwamu Fujimoto