Sony Corporation

Sony Semiconductor Solutions Corporation

Cv Research Corporation

Kiwamu Adachi

Shuichi Oka

Hiizu Ootorii

Shusaku Yanagawa

Satoshi Horiuchi

Takahiro Igarashi

Shun Mitarai

Katsuji Matsumoto

Takeshi Kodama

Tetsuya Yukimoto

Hideyuki Suzuki

Hiroshi Ozaki

Hiroshi Morita

Eiji Otani

Hiizu Ohtorii

Kazunao Oniki

Takeshi Ogura

Mitsuharu Shoji

Shinji Rokuhara

Takeshi Mizuno

Kousuke Seki

Izuho Hatada

Hiroyuki Shigeta

Naoki Kakoiyama

Kei Satou

Koki Uchino

Kazuki Sano

Kazunari Saitou

Yuto Tanaka

Provided is a semiconductor device capable of maintaining the flatness of a glass substrate and sufficiently protecting an end portion of the glass substrate. The semiconductor device includes a glass substrate including a first surface, a second surface opposite to the first surface, and a first side surface between the first surface and the second surface. The semiconductor device further includes wirings provided provided on the first and second surfaces, a first insulating film that covers the first surface, a second insulating film that covers the second surface, and a third insulating film that covers the first side surface, the third insulating film being continuous with at least one of the first or second insulating films.

Semiconductor device

A method of manufacturing a mounting substrate, the method includes: transferring part or all of a plurality of devices on a device substrate onto a wiring substrate, and temporarily fixing the transferred devices to the wiring substrate with use of a fixing layer having viscosity, the device substrate including a support substrate and the plurality of devices fixed on the support substrate; and performing a reflow process on the wiring substrate to electrically connect the transferred devices with the wiring substrate, and thereby forming the mounting substrate.

Method of manufacturing mounting substrate and method of manufacturing electronic apparatus

A photoelectric module of the present disclosure includes an optical device including an optical function element array made of a first base material, and a plurality of light emitting/receiving elements made of a second base material, wherein the optical function element array includes an optical substrate and a plurality of optical function elements, the optical substrate having a first surface and a second surface, and the optical function elements being integrated with the optical substrate and being arranged one-dimensionally or two-dimensionally, and the light emitting/receiving elements and their respective optical function elements face each other with the optical substrate in between to be located on a same axis in a direction perpendicular to the optical substrate, and the light emitting/receiving elements are disposed on the second surface with a space in between while being separated in units of a smaller number than array number in the optical function element array.

Photoelectric module and optical device

A method of manufacturing a mounting substrate according to an embodiment of the present technology includes the following three steps:

Mounting substrate and method of manufacturing the same

There is provided a radiation detector including: a plurality of photoelectric conversion devices, each photoelectric conversion device formed at least partially within an embedding layer and having a light receiving surface situated at least partially outside of the embedding layer, and a plurality of scintillator crystals, at least a first scintillator crystal of the plurality of scintillator crystals in contact with at least one light receiving surface at a proximal end, wherein a cross-section of the first scintillator crystal at the proximal end is smaller than a cross-section of the first scintillator crystal at a distal end.

Radiation detector, imaging unit, and imaging and display system

A sintering apparatus includes: a non-transportable section mounted in the atmosphere; a transportable section that has a mold capable of accommodating a material to be processed and is loaded detachably with respect to the non-transportable section; and a covering member that envelops the transportable section loaded on the non-transportable section in an almost hermetically sealed state and allows the transportable section to be separated from the non-transportable section with the transportable section enveloped in the almost hermetically sealed state.

Sintering apparatus, method of manufacturing sintered compact, and target material

A multilayer wiring board includes: a functional area which includes a thin film capacitor having a dielectric layer between an upper electrode and a lower electrode; and a peripheral area other than the functional area, wherein a mooring portion in which the dielectric layer and a conductive layer are laminated is provided in at least a portion of the peripheral area, and a roughness of a surface of the conductive layer which contacts the dielectric layer is greater than a roughness of a surface of the upper electrode or the lower electrode which contacts the dielectric layer.

Peel resistant multilayer wiring board with thin film capacitor and manufacturing method thereof

A method for manufacturing a printed-circuit board including: a capacitive element forming step of embedding a capacitive element in a substrate resin layer inside a substrate that includes a plurality of wiring layers laminated with the substrate resin layer interposed in between, the capacitive element forming step including forming a lower electrode using a conductive layer on one of the plurality of wiring layers, or using one of the plurality of wiring layers; forming a crystalline metal oxide-containing capacitor dielectric film at a temperature at or below a heat-resistant temperature of the substrate resin layer, and at or above room temperature; and forming an upper electrode on an upper surface of the capacitor dielectric film on the side opposite to the lower electrode.

Printed-circuit board and manufacturing method thereof

A capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially stacked. The dielectric layer has a stacked layer structure including a predetermined number of hafnium oxide sublayers and predetermined number of tantalum oxide sublayers. The number, materials, and thicknesses of the sublayers are determined so that the thickness ratio has a range in which, in voltage-leakage current characteristics showing the relationship between the voltage between the first and second electrodes and the leakage current, a start voltage at which the slope of an increase in the current starts to discontinuously increase satisfies an electric field strength of 3 [MV/cm] or more when the ratio of the total thickness of the predetermined number of tantalum oxide sublayers to the total thickness of the dielectric layer is varied, and the thickness ratio is within the range such that the start voltage is within the range.

Capacitor, method of producing the same, semiconductor device, and liquid crystal display device

A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cmare carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film which is excellent in film quality can be deposited by a low-temperature treatment and highly-reliable capacitance element and semiconductor device can be manufactured.

Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having amorphous metal oxide film and semiconductor device

A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film, and a film treatment process for improving the film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is maintained by a high-density plasma radiation treatment based upon ion and radical reactions, and which contains at least oxygen at an ion current density higher than 5 mA/cmare carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film, which is excellent in film quality, can be manufactured inexpensively by a low-temperature treatment. Also, when a capacitance element having an amorphous metal oxide film and a semiconductor device are manufactured, the amorphous metal oxide film, which is excellent in film quality, can be deposited by a low-temperature treatment and a highly-reliable capacitance element and semiconductor device can be manufactured.

A method of manufacturing an electronic component having a capacitor element and a resistor element, in which such capacitor element and such resistor element are individually formed in the material layer (for example, a tantalum oxide film formed by the CVD process) by locally subjecting such material layer to different kinds of treatment, such as nitriding and oxidation, is provided. There is also provided a method of manufacturing a semiconductor device having a capacitor element and a resistor element, in which such capacitor element and such resistor element are individually formed in the same material layer by locally subjecting such material layer to different kinds of treatment. There is still also provided a semiconductor device having a capacitor element and a resistor element thus formed. According to the present invention, a material excellent as that for capacitor element and also suitable for other applications is used, and the material is effectively converted into other materials suitable for the capacitor element and resistor element, respectively. Thus the present invention can add value of such material, and allows a positive attitude to be taken in facility investment for such material and introduction of other similar new materials.

Method of manufacturing electronic component having capacitor element and resistor element, method of manufacturing semiconductor device, and semiconductor device

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Kanagawa, Japan

Kiwamu Adachi