Electronics and Telecommunications Research Institute

Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Hanwha Aerospace Co., Ltd.

Kisoo Kim

Su Hwan Oh

Oh Kee Kwon

O-Kyun Kwon

Chul-Wook Lee

Byung-Seok Choi

Hyun Soo Kim

Sanghoon Lee

Seokwoo Kim

Sangmin Hyun

Junkyo Lee

Jae-Sik Sim

Ki-Hong Yoon

Eun Soo Nam

Aeryun Kim

Bongki Mheen

Yong-Hwan Kwon

Dae Kon Oh

Dajeong Kim

Dong Churl Kim

Myoungsook Oh

Sanghyun Lee

Ki-Hun Jeong

Kisang Yoon

Daekyun Lee

Young Ahn Leem

Artem Yurievich Nikishov

Byeong-cheol Yoon

Yeonjin Jo

Jongbae Kim

Kyung-Won Jang

Dong Kyung Nam

Seungchan Lee

Yang Ho Cho

Gyungock Kim

Jongin Lee

Dongil Yang

Mikhail Nikolaevich Makurin

Sung Bock Kim

Anton Sergeevich Lukyanov

Dong-Hun Lee

Won Seok Han

Elena Aleksandrovna Shepeleva

Mi-Ran Park

Jong Sool Jeong

Nikolay Nikolayevich Olyunin

Gennadiy Aleksandrovich Evtyushkin

Jung-Ho Song

Andrey Vladimirovich Kletsov

Byungseok Choi

Konstantin Aleksandrovich Pavlov

Taeseon Kim

Alexander Gennadievich Chernokalov

Chihun Won

Ki-Jun Sung

Myungsook Oh

Kihong Yoon

Jaeyun Jeong

Seungmin Cho

Sang-In Bae

Provided is a laser diode and a method for manufacturing the same. The diode includes a substrate including a DBR region having a channel hole, an active region, and a phase shift region, an optical waveguide provided on the substrate and extending from the active region to the DBR region, a lower insulation layer disposed on the optical waveguide, upper electrodes disposed on the lower insulation layer, and a heat blocking layer disposed in the channel hole of the DBR region and thermally separating the optical waveguide from the substrate.

Laser diode and manufacturing method of the same

Provided are an optical waveguide device and a laser apparatus including the same. The optical waveguide device includes a peripheral part disposed on an edge region of a substrate, an air pocket disposed on a central region of the substrate within the peripheral part, an optical waveguide comprising a core layer, which is disposed on an upper portion of the substrate within the air pocket to extend in a first direction, and an electrode on the core layer, and a plurality of hinges disposed on the air pocket to connect the optical waveguide to the peripheral part in a second direction crossing the first direction.

Optical waveguide device and laser apparatus including the same

Provided is a laser device according to embodiments of the inventive concept comprising a substrate including a gain region, a phase control region, and a tuning region arranged along a first direction, the substrate having an air gap which extends from the phase control region to the tuning region, an upper clad layer on the substrate, a waveguide structure extending in the first direction between the upper clad layer and the substrate, a first upper electrode disposed on the upper surface of the upper clad layer of the tuning region, and a lower electrode disposed on a lower surface of the substrate and extending from the gain region to the tuning region, wherein the air gap may have a larger width than the waveguide in a second direction crossing the first direction.

Laser device

An ultrathin camera device is provided. The ultrathin camera device comprises an optical module including a microlens array in which microlenses are arranged, an image sensor that outputs electrical image signals by sensing light coming through the microlens array, spacers that form a focal length by separating the optical module from the image sensor, and a processor that outputs a final image by reconstructing array images generated from the image signals with a designated imaging process depending on a distance at which the object is located. Here, each microlens convexly protrudes toward the image sensor.

Ultrathin camera device using microlens array, and multi-functional imaging method using the same

Disclosed are a wavelength-selectable laser diode and an optical communication apparatus including the same. The wavelength-selectable laser diode includes a substrate, which includes a gain region, a tuning region spaced apart from the gain region, and a phase adjusting region between the tuning region and the gain region, a waveguide layer on the substrate, a clad layer on the waveguide layer, and gratings disposed on the substrate or the clad layer in the gain region and the tuning region.

Wavelength-selectable laser diode and optical communication apparatus including same

Provided is a human body communication (HBC) apparatus for a near field communication (NFC) signal, the HBC apparatus including: a first communicator configured to receive a first NFC signal from an NFC reader through a body in proximity to the body; and a second communicator configured to transmit a signal to a user device, wherein first data included in the first NFC signal received from the NFC reader through the body by the first communicator is transmitted to the user device by the second communicator.

Human body communication apparatus for near field communication signal and method thereof

An optical device according to the embodiment of the inventive concept includes a waveguide path including a light generation region, a wavelength variable region, and a light modulation region, a first light waveguide layer provided in the light generation region to generate light, a second light waveguide layer provided in the wavelength variable region and connected to the first light waveguide layer, a ring-shaped third light waveguide layer provided in the light modulation region and connected to the second light waveguide layer, and first and second light modulation electrodes spaced apart from each other with the light modulation region therebetween. Here, the first light modulation electrode, the third light waveguide layer, and the second light modulation electrode vertically overlap each other.

Optical device and driving method thereof

Disclosed is a high frequency switch including a substrate, a pair of ground sections provided on the substrate, a center conductor provided between the pair of ground sections, and a photoconductive semiconductor element provided on the center conductor and extending between the center conductor and the pair of ground sections.

High frequency switch for high frequency signal transmitting/receiving devices

An optical apparatus includes a cooling device with a lower clad disposed thereon; a waveguide disposed on the lower clad and including an active waveguide to define a gain section and a passive waveguide to define a wavelength-tunable section; gratings disposed in the lower clad of the wavelength-tunable section; an upper clad disposed on the waveguide; a first upper electrode disposed on the upper clad of the gain section; and a second upper electrode disposed on the upper clad of the wavelength-tunable section. The lower clad of the wavelength-tunable section has a recess region to expose an upper surface of the cooling device, the recess region forming an air gap-having a height of 10 &#x3bc;m to 80 &#x3bc;m from the upper surface of the cooling device. The gratings are formed in a depth of at least 5 &#x3bc;m from a bottom surface of the lower clad of the recess region.

Optical apparatus including a cooling device and a gap

An image sensor and a method of manufacturing the image sensor are provided. The image sensor includes a block layer including an absorption layer and a transparent layer that are alternately stacked, a lens element is located below the block layer, and a sensing element is located to face the lens element.

Image sensor and method of manufacturing image sensor

A light comb generating device according to a disclosed embodiment includes a light source for generating light in a reference wavelength band and outputting the generated light, and an optical comb generator for generating a light comb having a reference comb interval from the output light, wherein the light source changes a wavelength of the output light as much as a reference frequency interval for every reference time interval, the light comb is generated within a wavelength range of the reference frequency interval, and the reference wavelength band may be at least about 3 &#x3bc;m and no greater than about 30 &#x3bc;m.

Light comb generating device and spectrometers including same

Provided is an optical detection device including a first ohmic contact layer of a first conductivity type, a second ohmic contact layer of a second conductivity type, and first and second mesa structures stacked between the first and second ohmic contact layers. The first mesa structure includes an electric field buffer layer; and a diffusion layer formed in the electric field buffer layer. The second mesa structure includes a light absorbing layer and a grading layer on the light absorbing layer.

Optical detection device

Door for refrigerator

Provided are an optical apparatus, a manufacturing method of a distributed Bragg reflector laser diode, and a manufacturing method of the optical apparatus, the an optical apparatus including a cooling device, a distributed Bragg reflector laser diode having a lower clad including a recess region on one side of the cooling device and connected to another side of the cooling device, and an air gap between the cooling device and the distributed Bragg reflector laser diode, wherein the air gap is defined by a bottom surface of the lower clad in the recess region and a top surface of the cooling device.

Optical apparatus, manufacturing method of distributed Bragg reflector laser diode and manufacturing method of optical apparatus

Growing community of inventors

Daejeon, South Korea

Kisoo Kim