Micron Technology Incorporated

Kishore Kumar Muchherla

Sampath K Ratnam

Ashutosh Malshe

Vamsi Pavan Rayaprolu

Peter Sean Feeley

Harish Reddy Singidi

Mustafa Nazmi Kaynak

Sivagnanam Parthasarathy

Shane G Nowell

Jeffrey S McNeil, Jr

Michael G Miller

Karl David Schuh

Jiangang Wu

Gianni Stephen Alsasua

Xiangang Luo

Renato C Padilla

Akira Goda

Gary F Besinga

James Fitzpatrick

Jung Sheng Hoei

Giuseppina Puzzilli

Violante Moschiano

Christopher S Hale

Renato Padilla, Jr

Jianmin Huang

Mark Alan Helm

Gil Golov

Jeremy Binfet

Devin M Batutis

Niccolo' Righetti

Michael Sheperek

Eric N Lee

Preston Allen Thomson

Kevin Roy Brandt

Todd A Marquart

Daniel J Hubbard

Kulachet Tanpairoj

Jonathan Scott Parry

Larry Joseph Koudele

Yun Li

Qisong Lin

Carmine Miccoli

Niccolo′ Righetti

Huai-Yuan Tseng

Ting Luo

Bruce A Liikanen

Patrick Robert Khayat

Steven Michael Kientz

Scott Anthony Stoller

Dave Scott Ebsen

Phong Sy Nguyen

Marc S Hamilton

Tomoharu Tanaka

Ugo Russo

Walter Di Francesco

Dung Viet Nguyen

Sead Zildzic

Lakshmi Kalpana Vakati

Saeed Sharifi Tehrani

Roland J Awusie

Walter Di-Francesco

Nicola Ciocchini

Animesh Roy Chowdhury

Jiangli Zhu

Fangfang Zhu

Sanjay Subbarao

Sebastien Andre Jean

Jie Zhou

Giovanni Maria Paolucci

Cory M Steinmetz

Paing Z Htet

Jeffrey Scott McNeil, Jr

Vivek Shivhare

Shuhui Chen

Christopher Joseph Bueb

Sundararajan Sankaranarayanan

Jung-Sheng Hoei

David Scott Ebsen

Xu Zhang

Silvia Beltrami

Yifen Liu

Sead Zildzic, Jr

Ankit Vinod Vashi

Pushpa Seetamraju

Hong Lu

Guang Chang Ye

Giuseppe Cariello

Mark Ish

Tomoko Ogura Iwasaki

Reshmi Basu

Michele Incarnati

Lei Zhou

Xiangyu Tang

Umberto Siciliani

Fulvio Rori

Pitamber Shukla

William C Filipiak

Tecla Ghilardi

John Zhang

A method includes determining respective valid translation unit counts of a block of non-volatile memory cells over a period of time, determining a rate of change of the respective valid translation unit counts of the block of non-volatile memory cells over the period of time, comparing the rate of change of the valid translation unit counts to a bin transition rate, and based on comparing the rate of change of the valid translation unit counts to the bin transition rate, performing a media management operation on the block of non-volatile memory cells.

Data age and validity-based memory management

A victim management unit (MU) for performing a media management operation is identified. The victim MU stores valid data in a first memory device of a plurality of memory devices. A cached data item on a second memory device of the plurality of memory devices is identified. A valid-to-invalid ratio of the victim MU is compared to a threshold value. In view of comparison, it is determined whether to pad the cached data item with at least a subset of the valid data stored at the victim MU or dummy data. Based on the determination, the cached data item padded with one of at least a subset of the valid data stored at the victim MU or the dummy data is written to a target MU.

Padding cached data with valid data for memory flush commands

A method includes identifying, by a processing device, a common pool of blocks comprising a first plurality of blocks allocated to system data and a second plurality of blocks allocated to user data; determining whether user data has been written to the second plurality of blocks within a threshold period of time; and responsive to determining that the user data has not been written to the second plurality of blocks within the threshold period of time, allocating a block from the second plurality of blocks to the first plurality of blocks.

Using a common pool of blocks for user data and a system data structure

A memory device comprises an array of memory cells organized into a plurality of wordlines, and a processing device to perform processing operations that receive a program command specifying a memory unit and data comprising first received data, where the plurality of wordlines includes one or more first active data wordlines and a group of consecutive retired wordlines. The processing operations also program the specified data to the memory unit by programming the first received data to the one or more first active data wordlines, identifying a first retired boundary wordline that is in the group of consecutive retired wordlines and is adjacent to one of the first active data wordlines, generating a first data pattern comprising a first plurality of threshold voltage levels, and programming the first data pattern to the first retired boundary wordline.

Selectively programming retired wordlines of a memory device

A system includes a memory device including multiple memory cells and a processing device operatively coupled to the memory device. The processing device is to receive a first read command at a first time. The processing device is further to receive a second read command at a second time. The processing device is further to determine that the first read command and the second read command are directed to an at least partially same set of memory cells of the plurality of memory cells. The processing device is further to perform a media management operation with respect to the at least partially same set of memory cells.

Modified read counter incrementing scheme in a memory sub-system

An amount of voltage shift is determined for one or more memory cells of a block family based on an initial reference value pertaining to the one or more memory cells and a subsequent reference value pertaining to the one or more memory cells. The block family is associated with a first voltage bin or a second voltage bin based on the determined amount of voltage shift. The first voltage bin is associated with a first voltage offset and the second voltage bin is associated with a second voltage offset.

Voltage bin calibration based on a voltage distribution reference voltage

Described are systems and methods for validating read level voltage in memory devices. An example memory device comprises: a memory array comprising a plurality of memory cells electrically coupled to a plurality of wordlines; and a controller coupled to the memory array, the controller to perform operations comprising: causing a read level voltage to be applied to a specified wordline of the plurality of wordlines; receiving an actual bit count reflecting a number of memory cells that have their respective threshold voltages below the read level voltage; and responsive to determining that a difference of an expected bit count and the actual bit count exceeds a predetermined threshold value, adjusting the read level voltage.

Validating read level voltage in memory devices

A method performed by a processing device receives a plurality of write operation requests, where each of the write operation requests specifies a respective one of the memory units, identifies one or more operating characteristic values, where each operating characteristic value reflects one or more memory access operations performed on a memory device, and determines whether the operating characteristic values satisfy one or more threshold criteria. Responsive to determining that the operating characteristic values satisfy the one or more threshold criteria, the method performs a plurality of write operations, where each of the write operations writes data to the respective one of the memory units, and performs a multiple-read scan operation subsequent to the plurality of write operations, where the multiple-read scan operation reads data from each of the memory units.

Workload-based scan optimization

Exemplary methods, apparatuses, and systems include an adaptive pre-read manager for controlling pre-reads of the memory device. The adaptive pre-read manager receives a first set of data bits for programming to memory. The adaptive pre-read manager performing a first pass of programming including a first subset of data bits from the set of data bits. The adaptive pre-read manager compares a set of threshold operating differences to a set of differences between multiple operating conditions during the first pass of programming and current operating conditions. The adaptive pre-read manager performs an internal pre-read of the programmed first subset of data bits. The adaptive pre-read manager performs a second pass of programming using the internal pre-read and a second subset of data bits from the first set of data bits.

Adaptive pre-read management in multi-pass programming

Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations comprising performing a data integrity check on a source set of memory cells, configured to store a first number of bits per memory cell, to obtain a data integrity metric value; responsive to determining that the data integrity metric value satisfies the threshold criterion, performing an error handling operation on the data stored on the source set of memory cells to generate corrected data; and causing the memory device to copy data the corrected data to a destination set of memory cells of the memory device, wherein the destination set of memory cells are configured to store a second number of bits per memory cell, wherein the second number of bits per memory cells is greater than the first number of bits per memory cell.

Memory compaction management in memory devices

Control logic in a memory device determines to initiate a string read operation on a first memory string of a plurality of memory strings in a block of a memory array, the block comprising a plurality of wordlines, wherein the first memory string is designated as a sacrificial string. The control logic further causes a read voltage to be applied to each of the plurality of wordlines concurrently and senses a level of current flowing through the sacrificial string while the read voltage is applied. In addition, the control logic identifies, based on the level of current flowing through the sacrificial string, whether a threshold level of read disturb has occurred on the block.

Sacrificial strings in a memory device to detect read disturb

A method includes receiving first data, determining a number of programming operations performed on a plurality of flash memory cells subsequent to a most recent erase operation performed on the plurality of flash memory cells, encoding the first data to provide a first write-once memory (WOM) encoded data, and storing the first WOM encoded data, based at least in part on the determined number of programming operations, within a number of the plurality of flash memory cells.

Write-once memory encoded data

A method includes determining, by a processing device, a value of a memory endurance state metric associated with a segment of a memory device in a memory sub-system; determining a target value of a code rate based on the value of the memory endurance state metric, and adjusting the code rate of the memory device according to the target value, wherein the code rate reflects a ratio of a number of memory units designated for storing host-originated data to a total number of memory units designated for storing the host-originated data and error correction metadata.

Adjustment of code rate as function of memory endurance state metric

A system can include a memory device and a processing device, operatively coupled with the memory device, to perform operations including reading a first copy of data stored in a first set of memory cells comprising a first memory cell, determining whether a threshold voltage of the first memory cell is within a first range of threshold voltages, responsive to determining that the threshold voltage of the first memory cell is within the first range of threshold voltages, reading a second copy of the data stored in a second set of memory cells comprising a second memory cell, determining whether a threshold voltage of the second memory cell is within a second range of threshold voltages, and responsive to determining that the threshold voltage of the second memory cell is outside the second range, using the second copy of the data.

Using duplicate data for improving error correction capability

A method includes causing a first set of memory cells, associated with a first wordline of a memory array, to be programmed with a first set of threshold voltage distributions; causing a second set of memory cells, associated with a second wordline adjacent to the first wordline, to be programmed with a second set of threshold voltage distributions; after programming the second set of cells, causing the first set of memory cells to be coarse programmed with an intermediate third set of threshold voltage distributions that is at least twice in number compared to the first set; and causing the first set of memory cells to be fine programmed with a final third set of threshold voltage distributions. At least some threshold voltage distributions of the final third set of threshold voltage distributions have wider read window margins than those of the intermediate third set of threshold voltage distributions.

Memory programming using consecutive coarse-fine programming operations of threshold voltage distributions

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Fremont, CA, United States of America

Kishore Kumar Muchherla