Applied Materials, Inc.

Kishor Kumar Kalathiparambil

Martin Lee Riker

Fuhong Zhang

Lanlan Zhong

Adolph Miller Allen

Xiangjin Xie

Lei Zhou

Shirish A Pethe

Halbert Chong

Suhas Bangalore Umesh

Vanessa Faune

Vaibhav Soni

Keith A Miller

Goichi Yoshidome

Song-Moon Suh

Luke Vianney Varkey

Philip Allan Kraus

Xianmin Tang

Anantha K Subramani

Kirankumar Neelasandra Savandaiah

Tza-Jing Gung

Joung Joo Lee

Prashanth Kothnur

Zhong Qiang Hua

Wei Lei

Preetham P Rao

Andrew Tomko

Sushil Arun Samant

Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.

Methods for shaping magnetic fields during semiconductor processing

A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition on a substrate. The apparatus includes at least one annular support assembly configured to be externally attached to and positioned below a substrate support pedestal and a magnetic field generator affixed to the annular support assembly and configured to radiate magnetic fields on a top surface of the substrate. The magnetic field generator may include a plurality of symmetrically spaced discrete permanent magnets or may use one or more electromagnets to generate the magnetic fields.

Apparatus for generating magnetic fields on substrates during semiconductor processing

Collimator for a physical vapor deposition (PVD) chamber

Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

Method for particle removal from wafers through plasma modification in pulsed PVD

Collimator for a physical vapor deposition chamber

Collimator for use in a physical vapor deposition (PVD) chamber

Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target.

Substrate temperature non-uniformity reduction over target life using spacing compensation

Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.

Physical vapor deposition (PVD) chamber with in situ chamber cleaning capability

A method of filling structures on a substrate uses a semi-dynamic reflow process. The method may include depositing a metallic material on the substrate at a first temperature, heating the substrate to a second temperature higher than the first temperature wherein heating of the substrate causes a static reflow of the deposited metallic material on the substrate, stopping heating of the substrate, and depositing additional metallic material on the substrate causing a dynamic reflow of the deposited additional metallic material on the substrate. RF bias power may be applied during the dynamic reflow to facilitate in maintaining the temperature of the substrate.

Methods and apparatus for semi-dynamic bottom up reflow

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Santa Clara, CA, United States of America

Kishor Kumar Kalathiparambil