Hitachi, Ltd.

Renesas Electronics Corporation

Hitachi Automotive Systems, Ltd.

Opnext Japan, Inc.

Renesas Technology Corp.

Hitachi Power Semiconductor Device, Ltd.

Hitachi Astemo Ltd.

Kisho Ashida

Yukihiro Sato

Nobuyoshi Matsuura

Tomoaki Uno

Hiroshi Moriya

Tetsuya Kawashima

Keiichi Okawa

Atsuo Soma

Kentarou Miyajima

Hiroyuki Nakamura

Hiroyuki Ohta

Ichio Shimizu

Nobuya Koike

Hisashi Tanie

Katsuei Ichikawa

Toshinori Hirataka

Kenya Kawano

Atsushi Fujiki

Tatsuhiro Seki

Mamoru Morita

Hiroyuki Oota

Makoto Ishii

Motohiro Sasaki

Keisuke Iwaishi

Yuuya Urushihata

Masato Nakamura

Yuji Enomoto

Toshiyuki Hata

Naotaka Tanaka

Koji Sasaki

Yuichi Machida

Akira Muto

Naoki Takeda

Shohei Hata

Atsushi Kazama

Hanae Shimokawa

Hiroyuki Ota

Nae Hisano

Hironobu Yamakawa

Yoshiaki Niwa

Daisuke Kawase

Masayuki Hio

Junji Onozuka

Takuto Yamaguchi

Yu Harubeppu

Kentaro Miyajima

Toshiaki Ozaki

Tomohiro Onda

Kohei Matsushita

Yusuke Nishino

Ryota Ashizawa

Kazumoto Sano

Provided is a semiconductor module comprising a power semiconductor chip, a base, an insulating substrate bonded to the base, a semiconductor chip bonded to the insulating substrate, and a case adhered to the base by means of an adhesive. The semiconductor module has a low variability but a high assembly quality and reliability enabling a decrease in stress between the case and an adhered portion of the base. The base includes a plate-like first material, and a second material coating the first material and having a linear coefficient of expansion greater than that of the first material. The case covers at least part of a side surface of the base and is adhered to the base at least on an upper surface of the base by means of the adhesive, and a linear expansion coefficient of the case is larger than the linear expansion coefficient of the first material.

Semiconductor module

Provided is an electric propulsion deviceincluding a propellerand a motorfor rotating the propeller, wherein the propeller includes a rotary bosssecured to a rotating shaftof the motor, and bladesprotruding radially outward from the rotary boss. Further, the blades include a base end portion with an airfoil continuously changing such that a trailing edge comes to be in parallel to the rotating shaft of the motor from a radially outer side to the rotary boss, in a vicinity of the rotary boss.

Electric propulsion device

Provide is a highly reliable semiconductor device in which stress generated in a semiconductor chip is reduced and an increase in thermal resistance is suppressed. The semiconductor device includes: a semiconductor chip including a first main electrode on one surface thereof and a second main electrode and a gate electrode on the other surface thereof; a first electrode connected to the one surface of the semiconductor chip via a first bonding material; and a second electrode connected to the other surface of the semiconductor chip via a second bonding material. The first electrode is a plate-shaped electrode and has a groove in a region overlapping with the semiconductor chip. The groove penetrates in a thickness direction of the first electrode and reaches an end portion of the first electrode when viewed in a plan view.

Semiconductor device

The present disclosure provides a disk brake capable of making it easier for the piston to return than conventional ones when the brake is released from a state where the brake is applied. In the disk brake, the seal grooveincludes a front wall, a rear wallfarther from the brake rotor than the front wallin the axial direction Dl, and a bottom wallextending along the axial direction Dl between the rear walland the front wall. The bottom wallincludes a front bottom walladjacent to the front walland a rear bottom walladjacent to the rear wall. The rear bottom wallhas a depth dfrom the inner circumferential surfaceof the cylinder, the depth dbeing larger than a dimension dof the uncompressed piston sealin the direction of the depth dand being larger than a depth dfrom the inner circumferential surfaceof the cylinderof the front bottom wall

Disk brake

A dynamic quantity measuring apparatus includes a strain sensor, a resin member, a strain body, and a boding portion. The strain sensor has a plurality of piezoresistance elements and a plurality of electrode pads formed on a surface of a semiconductor substrate. The resin member for electrical wiring is provided with a plurality of wires electrically connected to the plurality of electrode pads. The strain body is joined to a back surface of the strain sensor. The bonding portion is configured to bond the resin member for electrical wiring to the strain body. A groove is provided in a region of the resin member for electrical wiring located in a vicinity of the strain sensor.

Dynamic quantity measuring apparatus having a strain sensor disposed in a groove

A mechanical quantity measuring device includes: a sensor chip having a strain detector formed on a surface of a semiconductor substrate and a plurality of electrodes connected to the strain detector; a stem having ascot that protrudes from an adjacent peripheral portion and has an upper surface that is attached to a lower surface of the sensor chip by a bonding material formed from a metallic material or a glass material; a lead-out wiring part including a plurality of wires that are electrically connected to the plurality of electrodes; and a fixing part for fixing the stem, wherein: the stem and the fixing part are integrally molded or fixed through metallic bonding or mechanical bonding.

Mechanical quantity measuring device and sensor unit

A non-contact power-feeding device comprises: a power transmitting unit that includes a first antenna coil, an oscillator and a driver that enables generation of an AC magnetic field via the first antenna coil based upon a signal provided by the oscillator; and a power receiving unit that includes a second antenna coil that is magnetically coupled with the first antenna coil, wherein the first antenna coil comprises: a flat-plane spiral resonance coil wound with a plurality of turns; and a flat-plane spiral power-feeding coil that is wound with a plurality of turns outward relative to the resonance coil so as to surround the resonance coil, and is magnetically coupled with the resonance coil.

Non-contact power feeding device used in torque sensor having a coil enclosed in peripheral side of a resonance coil and is magnetically coupled with the resonance coil

A rotating body non-contact power-feeding device comprises: a power receiving-side substrate with a power receiving-side circuit component mounted thereat, which is fixed to a rotating shaft supported via a bearing and rotates as one with the rotating shaft; and a power transmitting-side substrate with a power transmitting-side circuit component mounted thereat, which is fixed to a holding unit holding the bearing so that a substrate surface thereof faces opposite a substrate surface of the power receiving-side substrate and is connected with a power source, wherein: a power transmitting-side coil is formed with a conductive pattern so as to achieve a flat-plane spiral pattern with a plurality of turns at a substrate surface facing opposite the power receiving-side substrate and the power transmitting-side circuit component is mounted at another substrate surface, at the power transmitting-side substrate that includes a substrate front surface and a substrate back surface, a power receiving-side coil is formed with a conductive pattern so as to achieve a flat-plane spiral pattern with at least one turn at a substrate surface facing opposite the power transmitting-side substrate and the power receiving-side circuit component is mounted at another substrate surface, at the power receiving-side substrate that includes a substrate front surface and a substrate back surface; and the power transmitting-side coil and the power receiving-side coil are magnetically coupled with each other so as to allow power to be contactlessly fed from the power transmitting-side substrate to the power receiving-side substrate.

Rotating body non-contact power-feeding device and torque sensor

Even when a strain sensor chip and an object to be measured are bonded to each other by using a metallic bonding material such as solder, the metallic bonding material shows the creep behavior when used under high temperature environment of, for example, 100&#xb0; C. or higher, and therefore, the strain detected by the strain sensor chip is gradually reduced, and the strain is apparently reduced. In the strain sensor chip mounting structure which is one embodiment of the present application, a strain sensor chip is fixed onto a surface to be measured of the object to be measured via a metallic bonding material. And, the metallic bonding material is bonded to a metallic film that is formed on a side surface of the strain sensor chip. In this manner, temporal change in a measurement error can be suppressed.

Strain sensor chip mounting structure, strain sensor chip and method of manufacturing a strain sensor chip mounting structure

A mechanical quantity measuring device (semiconductor strain sensor) has a semiconductor chip including a plurality of piezoresistive elements formed on a front surface of a semiconductor substrate, a lead wire unit electrically connected to a plurality of electrodes of the semiconductor chip, and a plate member joined to a rear surface of the semiconductor chip. Further, the plate member includes a first region facing the rear surface of the semiconductor chip and a second region provided adjacent to the first region, and a thickness of the plate member in the first region is made larger than a thickness in the second region.

Mechanical quantity measuring device

A device for measuring mechanical quantity is provided which reduces the influence of a difference in thermal expansion coefficient between an object to be measured and a base plate metal body, and precisely measures a mechanical quantity such as deformation quantity or strain quantity caused in the object to be measured. The device includes a semiconductor strain sensor module for measuring deformation quantity of the object to be measured, and the module includes a metal body, and a semiconductor strain sensor mounted on the metal body to detect strain of the metal body. The object to be measured is made of a material having a thermal expansion coefficient larger than that of the metal body. Further, the metal body mounted with the semiconductor strain sensor has a structure configured to be fixed to the object to be measured.

Device for measuring mechanical quantity

In a mechanical quantity measuring device () having a sensor chip () which outputs a sense output (S) corresponding to a mechanical quantity acting on the object to be measured (), and a flexible wiring board () which supports the sensor chip () and has a wire () to lead out the sense output (S) to outside, and in which in measuring the mechanical quantity, the sensor chip () and the flexible wiring board () are attached to the object to be measured (), a cutout () is provided on the flexible wiring board () near the sensor chip () and on the side where the wire () is arranged for the sensor chip (). Thus, change in the sense output (S) with time can be restrained.

The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring.

Semiconductor device and manufacturing method of the same

To improve the performance and reliability of semiconductor devices. For the semiconductor chip CP, power MOSFETs Qand Qfor the switch, a diode DDfor detecting the heat generation of the power MOSFET Q, a diode DDfor detecting the heat generation of the power MOSFET Q, and plural pad electrodes PD are formed. The power MOSFET Qand the diode DDare arranged in a first MOSFET region RGon the side of a side SD, and the power MOSFET Qand the diode DDare arranged in a second MOSFET region RGon the side of a side SD. The diode DDis arranged along the side SD, the diode DDis arranged along the side SD, and all pad electrodes PD other than the pad electrodes PDSand PDSfor the source are arranged along a side SDbetween the diodes DDand DD

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Tokyo, Japan

Kisho Ashida