Samsung Electronics Co., Ltd.

Samsung Semiconductor Inc.

Kiseok Moon

Xueti Tang

Steven M Watts

Vladimir Nikitin

Mohamad Towfik Krounbi

Dmytro Apalkov

Zhitao Diao

Carl Xiaodong Che

Hyungjai Lee

A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

A magnetic junction usable in a magnetic memory and a method for providing the magnetic memory are described. The method includes providing a pinned layer, providing an engineered nonmagnetic tunneling barrier layer, and providing a free layer. The pinned layer and the free layer each include at least one ferromagnetic layer. The engineered nonmagnetic tunneling barrier layer has a tuned resistance area product. In some aspects, the step of providing the engineered nonmagnetic tunneling barrier layer further includes radio-frequency depositing a first oxide layer, depositing a metal layer, and oxidizing the metal layer to provide a second oxide.

Method and system for providing a magnetic junction having an engineered barrier layer

A magnetic junction is provided. The magnetic junction includes a reference stack, a nonmagnetic spacer layer and a free layer. The reference stack includes a high perpendicular magnetic anisotropy (PMA) layer and a graded polarization enhancement layer (PEL) between the high PMA and nonmagnetic spacer layers. The PEL is magnetically coupled with the reference layer. The PEL includes magnetic layers and nonmagnetic insertion layers. At least part of the PEL has a spin polarization greater than the PMA layer's. The nonmagnetic insertion layers are configured such that the magnetic layers are ferromagnetically coupled and the crystalline orientations of the high PMA and nonmagnetic spacer layers are decoupled. Each nonmagnetic insertion layer's thickness is insufficient for the crystalline orientations to be decoupled in the absence of the remaining nonmagnetic insertion layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Method and system for providing magnetic junctions having improved polarization enhancement and reference layers

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, at least one insulating layer, and at least one magnetic insertion layer adjoining the at least one insulating layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one insulating layer is adjacent to at least one of the free layer and the pinned layer. The at least one magnetic insertion layer adjoins the at least one insulating layer. In some aspects, the insulating layer(s) include at least one of magnesium oxide, aluminum oxide, tantalum oxide, ruthenium oxide, titanium oxide, and nickel oxide The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Method and system for providing magnetic junctions having improved characteristics

A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories

A patterned disk for a hard disk drive. The patterned disk includes a magnetic material over a substrate. The magnetic material includes a plurality of grooves. The grooves are filled with a lubricant that is hardened with UV exposure or some other hardening process. The lubricant provides a protective cover for the magnetic material exposed by the grooves. The use of lubricants in the fabrication of disks is known, thus the process does not introduce a process step that requires special equipment and/or process development.

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Pleasanton, CA, United States of America

Kiseok Moon