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University of New Mexico

Kirt C Hickman

John R McNeil

S Sohail Naqvi

Susan M Gaspar

Steven Roy Julien Brueck

Brian R Stallard

Gary D Tipton

Kenneth P Bishop

In microelectronics manufacturing, an arrangement for monitoring and control of exposure of an undeveloped photosensitive layer on a structure susceptible to variations in optical properties in order to attain the desired critical dimension for the pattern to be developed in the photosensitive layer. This is done by ascertaining the intensities for one or more respective orders of diffracted power for an incident beam of radiation corresponding to the desired critical dimension for the photosensitive layer as a function of exposure time and optical properties of the structure, illuminating the photosensitive layer with a beam of radiation of one or more frequencies to which the photosensitive layer is not exposure-sensitive, and monitoring the intensities of the orders of diffracted radiation due to said illumination including at least the first order of diffracted radiation thereof, such that when said predetermined intensities for the diffracted orders are reached during said illumination of photosensitive layer, it is known that a pattern having at least approximately the desired critical dimension can be developed on the photosensitive layer.

Diffracted light from latent images in photoresist for exposure control

For critical dimension (CD) metrology of photomasks, a laser scatterometer linewidth measurement tool provides noncontact rapid, and nondestructive measurement of linewidth. Calculation of the linewidth is based on a rigorous theoretical model, thus eliminating the need for calibrations. A chrome-on-glass diffraction grating is illuminated with a laser. A photodetector mounted behind the photomask measures the scattered power in each diffracted order. This provides data for the rigorous theoretical model which provides a relationship between the linewidth of the photomask grating and the fraction of total power diffracted into the transmitted zero-order. This scatterometer linewidth measurement technique provides a simple, rapid, nondestructive, and noncontact method of linewidth determination which takes into account the effect of the glass substrate on which the grating is placed. This technique is insensitive to variations in angle of incidence, spot size, position of the spot on the grating, polarization and wavelength.

Simple CD measurement of periodic structures on photomasks

Growing community of inventors

Albuquerque, NM, United States of America

Kirt C Hickman