Osram Opto Semiconductors Gmbh

Kirstin Petersen

Herbert Brunner

Ion Stoll

Hans-Christoph Gallmeier

Frank Baumann

Alfred Lell

Berthold Hahn

Volker Härle

Dominik Eisert

Georg Bogner

Uwe Strauss

Stefan Grötsch

Stefan Groetsch

Markus Pindl

Matthias Peter

Julius Muschaweck

Karlheinz Arndt

Tobias Gebuhr

Norbert Linder

Martin Brandl

Hailing Cui

Markus Boss

Hubert Ott

Volker Haerle

Sönke Tautz

Stephan Preuss

Stephan Miller

Günter Spath

Burkard Wiesmann

Joerg Strauss

Stefan GRÖTSCH

A method for manufacturing at least one optoelectronic semiconductor device includes providing a substrate and applying a number of optoelectronic semiconductor chips, which are arranged spaced apart from one another in a lateral direction, on an upper face of the substrate. At least one reflective coating is applied to the exposed areas of the substrate and the lateral surfaces of the optoelectronic semiconductor chips. Openings are introduced into the reflective coating, which completely penetrate the reflective coating. Electrically conductive material is arranged on the reflective coating and at least on some parts of the openings. Radiation penetration surfaces of the optoelectronic semiconductor chips are free of the reflective coating and the reflective coating does not laterally extend beyond the optoelectronic semiconductor chips.

Method for manufacturing at least one optoelectronic semiconductor device

An optical element for light outcoupling and/or conversion of light includes a light-emitting semiconductor chip with at least one layer selected from a wavelength conversion layer, a scattering layer, a light outcoupling layer and a lens layer, which each includes a plastics material processable in a compression molding method.

Optical element, optoelectronic component and method for the production thereof

The invention relates to a semi-conductor component, comprising a semi-conductor chip () which has an active layer () suitable for generating radiation and suitable for emitting radiation in the blue wavelength range. A first converter () comprising a Ce doping is arranged downstream of the semiconductor chip () in the emission direction. In addition, a second converter () comprising a minimum Ce doping of 1.5% is arranged downstream of the semiconductor chip () in the emission direction. The invention further relates to a module with a plurality of such components.

Optoelectronic semiconductor component and module with a plurality of such components

A method of producing a light-emitting diode includes providing at least one light-emitting diode chip, providing a suspension comprising a solvent and particles of at least one luminescent material, arranging the at least one light-emitting diode chip in the suspension, electrophoretically depositing the particles on an outer face of the at least one light-emitting diode chip, and completing the light-emitting diode.

Method for producing a light-emitting diode and light-emitting diode

One embodiment of the invention describes a method for producing a luminescence conversion substance layer on a substrate with a semiconductor element that emits a primary radiation during operation. A composition includes a luminescence conversion substance, a matrix material and a solvent. The composition is applied to a substrate. At least part of the solvent is removed, with the result that the luminescence conversion substance layer is formed on the substrate.

Method for producing a luminescence conversion substance layer, a composition therefor and a component comprising such a luminescence conversion substance layer

A method is provided for producing a radiation-emitting semiconductor chip, in which a first wavelength-converting layer is applied over the radiation exit face of a semiconductor body. The application method is selected from the following group: sedimentation, electrophoresis. In addition, a second wavelength-converting layer is applied over the radiation exit face of the semiconductor body. The second wavelength-converting layer is either produced in a separate method step and then applied or the application method is sedimentation, electrophoresis or printing. Furthermore, a radiation-emitting semiconductor chip and a radiation-emitting component are provided.

Method for producing a semiconductor chip emitting radiation, semiconductor chip emitting radiation, and component emitting radiation

A lighting device () comprises at least one element () emitting light which is at least in part visible, and at least one conversion medium (), which converts at least part of the radiation emitted by the element () into radiation of another frequency. In addition, the lighting device () comprises at least one filter medium () which filters at least part of the radiation, and which is configured such that the quantity of the conversion medium () to be used is reduced for at least one predetermined color saturation and/or one predetermined hue. This means that, compared with a light source corresponding to the lighting device () apart from the filter medium (), savings are made in conversion medium () while achieving the same color saturation or the same hue. Light of a predetermined color saturation or of a predetermined hue may be efficiently generated by such a lighting device () and the lighting device () may be inexpensively produced. In operation, it also has high light intensities and a long service life.

Lighting device

At least two semiconductor components emit electromagnetic radiation in different wavelength ranges. The superimposition of these electromagnetic radiations of all semiconductor components has at least one fraction in the visible wavelength range. At least one of the semiconductor components has a luminescence conversion element in the beam path.

Arrangement and method for generating mixed light

An optoelectronic module for emitting monochromatic radiation in the visible wavelength range is specified. The module has a plurality of light emitting diode chips which generate UV radiation. The UV radiation is converted into light in the visible range, for example, into green light, by a wavelength converter. The coupling-out of light from the module is optimized by the use of two selectively reflecting and transmitting filters. This module can be used as a light source in a projection apparatus.

Optoelectronic module and projection apparatus comprising the optoelectronic module

A semiconductor light source is provided, the semiconductor light source having a primary radiation source () which, when the semiconductor light source is operated, emits electromagnetic primary radiation () in a first wavelength range, and having a luminescence conversion module () into which primary radiation () emitted by the primary radiation source () is fed. The luminescence conversion module () contains a luminescence conversion element () which, by means of a luminescent material, absorbs primary radiation () from the first wavelength range and emits electromagnetic secondary radiation () in a second wavelength range. The luminescence conversion element () is arranged on a heat sink () at a distance from the primary radiation source (). It has a reflector surface () which reflects back into the luminescence conversion element () primary radiation () which passes through the luminescence conversion element () and is not absorbed thereby and/or reflects secondary radiation () in the direction of a light coupling-out surface () of the luminescence conversion element ().

Semiconductor light source having a primary radiation source and a luminescence conversion element

An optoelectronic component comprising a housing and a luminescence diode chip arranged in the housing is specified, which component emits a useful radiation. The housing has a housing material which is transmissive to the useful radiation and which is admixed with radiation-absorbing particles in a targeted manner for setting a predetermined radiant intensity or luminous intensity of the emitted useful radiation. The radiation-absorbing particles reduce the radiant intensity or the luminous intensity by a defined value in a targeted manner in order thus to set a predetermined radiant intensity or luminous intensity for the component. A method for producing an optoelectronic component of this type is additionally disclosed.

Electromagnetic-radiation-emitting optoelectronic component and method for producing an optoelectronic component

An optoelectronic component is specified that emits a useful radiation. It comprises a housing having a housing base body with a housing cavity, and a light-emitting diode chip arranged in the housing cavity. At least one base body material of the housing base body has radiation-absorbing particles admixed in a targeted manner to reduce its reflectivity. According to another embodiment of the component, the housing additionally or alternatively has a housing material transmissive for the useful radiation that has radiation-absorbing particles admixed in a targeted manner to reduce its reflectivity. In addition, a method for manufacturing such a component is specified.

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Wuppertal, Germany

Kirstin Petersen