Alcatel Lucent

Lucent Technologies Inc.

At&t Bell Laboratories

Alcatel-lucent USA Inc.

Kirk William Baldwin

Loren Neil Pfeiffer

Kenneth William West

Robert L Willett

Horst L Stormer

John A Rogers

Zhenan Bao

Benjamin John Eggleton

Kenneth Stephen Feder

Jon W Engelberth

Paul Steinvurzel

Peter Mach

Rajan D Deshmukh

Joseph Spector

Robert A Macharrie

An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.

Quantum well device

Apparatus comprising surface site comprising substantially inorganic surface having chemical composition selected from group consisting of metals, semiconductors, insulators, and mixtures thereof, the surface positioned within polypeptide bonding region and having selective bonding affinity for polypeptide; plurality of interlayers between which surface site is interposed; distal site end on surface site and distanced from interlayers, the surface being provided on distal site end; surface site and interlayers being interposed between first and second supports; first and second conductors provided on first and second supports and having respective first and second distal conductor ends positioned within polypeptide bonding region; conductors being capable of applying external voltage potential across polypeptide bonding region. Apparatus, optionally comprising such first and second supports and conductors; and comprising third conductor in electrical communication with surface site, the third conductor positioned for electrical communication with source of an external bias voltage. Techniques for making apparatus.

Detection apparatus for biological materials and methods of making and using the same

Method that includes providing plurality of test sites each having first and second layers respectively including inorganic first and second surface sites forming parts of interior of a well, the surface sites having positions and thicknesses being configured for locating thereon portions of unidentified amino acid-containing molecules; exposing each of a first plurality of the test sites to a fluid containing a different one of plurality of pre-identified amino acid-containing molecules and determining bonding signatures onto each of first plurality of test sites; exposing each of second plurality of test sites to another fluid containing unidentified amino acid-containing molecule and determining bonding signatures onto second plurality of test sites; and comparing bonding signatures to determine or exclude identity of unidentified amino acid-containing molecule.

An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.

Interfering excitations in FQHE fluids

Apparatus comprising a surface site comprising a substantially inorganic surface having a chemical composition selected from the group consisting of metals, semiconductors, insulators, and mixtures thereof, the surface positioned within a polypeptide bonding region and having a selective bonding affinity for a polypeptide; a plurality of interlayers between which the surface site is interposed; a distal site end on the surface site and distanced from the interlayers, the surface being provided on the distal site end; the surface site and the interlayers being interposed between first and second supports; first and second conductors provided on the first and second supports and having respective first and second distal conductor ends positioned within the polypeptide bonding region; the conductors being capable of applying an external voltage potential across the polypeptide bonding region. Apparatus, optionally comprising such first and second supports and conductors; and comprising a third conductor in electrical communication with the surface site, the third conductor positioned for electrical communication with a source of an external bias voltage. Techniques for making apparatus.

An encapsulated semiconductor device and method wherein an encapsulant material is deposited on the device in an environment that enhances device performance. Illustrative encapsulant materials are organic polymers, silicon polymers and metal/polymer-layered encapsulants. Encapsulant formation environments may include inert, reducing and ammonia gas environment. Further disclosed are an encapsulated transistor and a semiconductor device.

Semiconductor device encapsulation

Apparatus comprising a surface site layer having a distal site end, wherein the distal site end includes a substantially inorganic surface having a chemical composition selected from a group consisting of metals, semiconductors, insulators, and mixtures thereof, the surface positioned within a polypeptide bonding region and having a selective bonding affinity for a polypeptide; a plurality of interlayers between which the surface site layer is interposed, wherein the distal site end is distanced from the interlayers, first and second supports, wherein the surface site layer and the interlayers are interposed between the first and second supports; and first and second conductors provided on the first and second supports and having respective first and second distal conductor ends positioned within the polypeptide bonding region; wherein the conductors are capable of applying an external voltage potential across the polypeptide bonding region.

A thermally tunable optical fiber device comprises a length of optical fiber including a device disposed within a microcapillary heater. The microcapillary heater can include a thin film resistive heater. The fiber itself can optionally include a thin film resistive heater overlying the device, and a plurality of nested microcapillary tubes can optionally provide a plurality of successive concentric heaters overlying the device. The heaters films can be films with uniform, tapered or periodically varying thickness. The heaters can be single layer or multiple layer. Multiple layer films can be superimposed with intervening insulating layers or plural layers can be formed on different angular regions of the microcapillary. Thus one can provide virtually any desired temperature versus length profile along the fiber device.

Thermally tunable fiber devices with microcapillary heaters

The present invention is a method for making field effect devices, such as a field effect transistors, having ultrashort gate lengths so low as five hundred angstroms or less. In accordance with the invention the gate structure is grown vertically on a substrate by thin film deposition so that the length dimension of the gate is perpendicular to a major surface of the substrate. An edge of the gate-containing substrate is exposed, and the structure comprising the source, drain and channel is grown on the edge. Using this approach, field effect devices with precisely controlled gate lengths of less than 100 angstroms are achievable. Moreover the active regions of the device can be immersed within semiconductor material so that surface properties do not deteriorate device performance.

Field effect devices with ultra-short gates

Method for making field effect devices with ultra-short gates

The disclosed novel solid state electronic devices comprise a two-dimensional electron gas (2DEG), emission means of ballistic 2DEG electrons, collection means of 2DEG electrons, and control means disposed between the emissions means and the collection means such that ballistic 2DEG electrons that travel from the emission means to the collections means pass through a portion of the device that underlies the control means. By means of the control means the electron density in the portion of the device can be changed, whereby the path of ballistic 2DEG electrons can be affected, in a manner analogous to refraction in optics. This 'electron refraction' makes possible a variety of devices, e.g., switches and logic elements.

Growing community of inventors

Springfield, NJ, United States of America

Kirk William Baldwin