Air Products and Chemicals, Inc.

Versum Materials Us, LLC

Kirk Scott Cuthill

Manchao Xiao

Mark Leonard O'Neill

Arthur Kenneth Hochberg

Xinjian Lei

Bing Han

Liu Yang

Haripin Chandra

Anupama Mallikarjunan

Hareesh Thridandam

Robert Daniel Clark

Madhukar Bhaskara Rao

Moo-Sung Kim

Matthew R MacDonald

Jianheng Li

Heather Regina Bowen

Yoshihide Senzaki

Described herein are compositions and methods using same for forming a silicon-containing film such as, without limitation, a carbon doped silicon oxide film, a carbon doped silicon nitride, a carbon doped silicon oxynitride film in a deposition process. In one aspect, the composition comprises at least cyclic carbosilane having at least one Si&#x2014;C&#x2014;Si linkage and at least one anchoring group selected from a halide atom, an amino group, and combinations thereof.

Compositions and methods using same for carbon doped silicon containing films

Methods for forming silicon nitride films are disclosed that comprise the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiHgroup described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm.

Methods for depositing silicon nitride films

Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.

Dielectric films comprising silicon and methods for making same

Described herein are methods of forming dielectric films comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.

Methods to prepare silicon-containing films

Described herein are methods to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of:

Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes

A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.

Diethylsilane as a silicon source in the deposition of metal silicate films

A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula:[RN&#x2014;NH]Si(R)where each Ris independently selected from alkyl groups of Cto C; each Ris independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4.

Precursors for depositing silicon containing films

Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula:[RN&#x2014;NH]Si(R)where each Ris independently selected from alkyl groups of Cto C; each Ris independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1&#x2013;4. Some of the hydrazinosilanes are novel precursors.

Precursors for depositing silicon containing films and processes thereof

This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers. The organometallic precursors are N,N'-alkyl-1,1-alkylsilylamino metal complexes represented by the formula: wherein M is a metal selected from Group VIIb, VIII, IX and X, and specific examples include cobalt, iron, nickel, manganese, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium, and the Rcan be same or different selected from hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl.

Organometallic complexes and their use as precursors to deposit metal films

A method for producing a material selected from the group consisting of metal oxide, metal oxynitride and mixtures thereof on a substrate, comprising; reacting a first reactant selected from the group consisting of (R R N) M(&boxH;NR ) , (R R N) M&lsqb;&eegr; &mdash;R N&boxH;C (R )(R )&rsqb; and mixtures thereof with an oxidant and up to 95 volume percent of a source of nitrogen selected from the group consisting of ammonia, N O, NO, NO , alkyl amines, N H , alkyl hydrazine, N and mixtures thereof, to produce said material on said substrate, where R , R , R , R , R , R , R and R are individually C alkyl, aryl or hydrogen, M&boxH;Ta, Nb, W or Mo or mixtures thereof, and when M&boxH;Ta or Nb, x&equals;3 and y&equals;1 and when M&boxH;W or Mo, y&equals;x&equals;2.

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Vista, CA, United States of America

Kirk Scott Cuthill