Kla-tencor Technologies Corporation

Kla Tencor Corporation

Accuray Inc.

Siemens Medical Solutions Usa, Inc.

Kla-tencor Technologies Corproation

Kirk Joseph Bertsche

Mark Armstrong McCord

David Lewis Adler

Yehiel Gotkis

David Lee Brown

Stuart L Friedman

David Aitan Soltz

George H Zapalac, Jr

J Kirkwood H Rough

Harald F Hess

Mark Trail

Douglas A Bourne

Giorgio Asmerom

Miguel Gutierrez

Mehdi Vaez-Iravani

Marian Mankos

Luca Grella

Liqun Han

John D Greene

Frank Y H Fan

Francisco Machuca

Chong-Guo Yao

Mark Mccord

A linear accelerator target apparatus includes a target material to produce radiation upon being struck by electrons accelerated by a linear accelerator and a target holder assembly to which the target material is attached. The target holder assembly includes a cooling channel disposed around a perimeter of the target material. The target holder assembly is configured to be detachably coupled to a housing of the linear accelerator. The target apparatus further includes a protective window coupled to the target holder assembly over the target material.

Field replaceable, disposable, and thermally optimized X-ray target with integral beam current monitoring

Described herein is a medical linear accelerator including an accelerator target structure constructed of a material having a thickness of less than 0.2 radiation lengths, and an accelerator structure to receive an electromagnetic wave and generate an output therapy dose rate of electrons having a beam energy between 4-25 mega-electronvolts (MeV).

Bremsstrahlung target for radiation therapy system

Described herein is a medical accelerator target including a target constructed of a material having an atomic number that is greater than or equal to 40 or having a thickness of less than 0.2 radiation lengths.

A method and apparatus for inspection and review of defects is disclosed wherein data gathering is improved. In one embodiment, multiple or segmented detectors are used in a particle beam system.

Method and apparatus for inspecting a substrate

A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.

Inline inspection of photovoltaics for electrical defects

A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating substrate to a target potential.

Method for charging substrate to a potential

One embodiment relates to an electronically-variable electrostatic immersion lens in an electron beam apparatus. The electrostatic immersion lens includes a top electrode configured with a first voltage applied thereto, an upper bottom electrode configured with a second voltage applied thereto, and a lower bottom electrode configured with a third voltage applied thereto. The third voltage is controlled separately from the second voltage. Other embodiments are also disclosed.

Electronically-variable immersion electrostatic lens

One embodiment relates to a charged-particle beam apparatus. The apparatus includes at least a source for generating the charged-particle beam, a first deflector, and a second deflector. The first deflector is configured to scan the charged-particle beam in a first dimension. The second deflector is configured to deflect the scanned beam such that the scanned beam impinges telecentrically (perpendicularly) upon a surface of a target substrate. Other embodiments are also disclosed.

Large-field scanning of charged particles

One embodiment pertains to an apparatus which impinges a focused electron beam onto a substrate. The apparatus includes an irradiation source and at least two non-axisymmetric lenses. The irradiation source is configured to originate electrons for an incident electron beam. The non-axisymmetric lenses are positioned after the irradiation source and are configured to focus the beam in a first linear dimension so as to produce a linear crossover of the beam. The non-axisymmetric lenses are further configured to subsequently focus the beam in a second linear dimension, which is substantially perpendicular to the first linear dimension. Finally, the non-axisymmetric lenses are also configured to produce a focused image at an image plane. Other embodiments are also disclosed.

Electron imaging beam with reduced space charge defocusing

One embodiment disclosed relates to an electron beam apparatus for inspection of a semiconductor wafer, wherein substantially an entire area of the wafer surface is scanned without moving the stage. A cathode ray tube (CRT) gun may be used to rapidly (and cost effectively) scan the beam over the wafer. Another embodiment disclosed relates to a high-speed automated e-beam inspector configured to scan the e-beam in one dimension while translating the wafer in a perpendicular direction. The translation may be linear, or alternatively, may be in a spiral path. Other embodiments are also disclosed.

High-speed electron beam inspection

One embodiment disclosed relates to an apparatus for detecting defects in substrates. An irradiation source is configured to generate an incident beam, and a lens system configured to focus the incident beam onto a target substrate so as to cause emission of electrons. A multiple-bin detector is configured to detect the emitted electrons, and each bin of the detector detects the emitted electrons within a range of energies. A processing system configured to process signals from the multiple-bin detector. Other embodiments are also disclosed.

Growing community of inventors

San Jose, CA, United States of America

Kirk Joseph Bertsche