Shin-Etsu Handotai Co., Ltd.

Kirio Itoi

Izumi Fusegawa

Eiichi Iino

Tomohiko Ohta

Tohru Ishizuka

In a method for producing a silicon single crystal by growing a single crystal ingot while a magnetic field perpendicular to a crystal growth axis is applied to a silicon melt contained in a quartz crucible during pulling of the single crystal from the melt contained in the quartz crucible, the crystal growth is performed so that one of a low temperature region and a high temperature region generated at a surface of the silicon melt contained in the crucible should always cover a solid-liquid interface of the crystal growth, or a ratio of vertical magnetic field component to horizontal magnetic field component for magnetic field strength at the crystal center of the surface of the silicon melt contained in the quartz crucible is controlled to be 0.3 or more and 0.5 or less. There are provided methods for producing a silicon single crystal based on the CZ method in which a horizontal magnetic field is applied, which can produce a silicon single crystal ingot of high uniformity of interstitial oxygen concentration along the growth direction of the grown single crystal with high productivity and high yield.

Method for producing silicon single crystal and production apparatus therefor, as well as single crystal and silicon wafer produced by the method

Disclosed are an improved method and apparatus for slicing a workpiece such as a semiconductor ingot, in which coolant nozzles are disposed near the cutting edge of an annular blade, air nozzles are respectively equipped near the both side surfaces, the air nozzles are connected to a compressed air supply source via pressure regulators and electromagnetic valves, a deflection detector is located in the vicinity of one of the side surfaces, which detector is connected to the air nozzles via a computer and the pressure regulators, wherein, in the course of slicing, for example, if an actual deflection has been detected toward one of the side surfaces, the compressed air is blown from an adjacent air nozzle to the one of the side surfaces and the secondary pressure of the pressure regulator connecting to the adjacent air nozzle is regulated higher or lower, as the blade is deflected larger or smaller. In such a manner, deflection of the blade is minimized to decrease a warpage of a sliced wafer obtained by the annular saw blade method and apparatus.

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Nishishirakawa-gun, Japan

Kirio Itoi