Onechip Photonics Inc.

Electrophotonic-ic Inc.

Artic Photonics Inc.

Enablence Inc.

Dbm Optical Technologies, Inc.

Kirill Pimenov

Yury Logvin

Valery Tolstikhin

Fang Wu

Christopher Watson

Yongbo Tang

Serge Grabtchak

Ron Moore

Eric Desfonds

Chris Watson

Greg Letal

A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

Vertically-coupled surface-etched grating DFB laser

The invention describes an integrated photonics platform comprising a plurality of at least three vertically-stacked waveguides which enables light transfer from one waveguide of the photonic structure into another waveguide by means of controlled tunneling method. The light transfer involves at least three waveguides wherein light power flows from initial waveguide into the final waveguide while tunneling through the intermediate ones. As an exemplary realization of the controlled tunneling waveguide integration, the invention describes a photonic integrated structure consisting of laser guide as upper waveguide, passive guide as middle waveguide, and modulator guide as lower waveguides. Controlled tunneling is enabled by the overlapped lateral tapers formed on the same or different vertical waveguide levels. In the further embodiments, the controlled tunneling platform is modified to implement wavelength-(de)multiplexing, polarization-splitting and beam-splitting functions.

Controlled tunneling waveguide integration (CTWI) for effective coupling between different components in a photonic chip

Disclosed herein is a monolithically integrated coherent receiver chip which has a geometric arrangement of the on-chip components that significantly improves the performance and the manufacturability of a coherent receiver module for Dual Polarization Quadrature Phase Shift Keyed (DP-QPSK) applications and other optical coherent detection systems. The coherent receiver chip comprises two optical hybrids, three optical inputs and eight electrical outputs with the two optical hybrids oriented perpendicular to the optical inputs and the electrical outputs which are widely spaced and arranged in a co-linear fashion that simplifies module design and assembly. The proposed geometric arrangement also replaces any optical waveguide crossings with vertical electrical-optical crossings and includes electrical transmissions which are used to minimize channel skew. The proposed configuration also has the additional benefit of improved thermal management by separating the module's trans-impedance amplifiers.

Integrated coherent receiver having a geometric arrangement for improved device efficiency

The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide. Further in other embodiments the wavelength filter is provided by a thin-film filter abutting a facet of the integrated-photonics arrangement wherein optical signals are coupled by optical waveguides and/or additional optical elements such as a multimode interference device.

Waveguide optically pre-amplified detector with passband wavelength filtering

The invention describes the method and apparatus for enhanced efficiency in a laterally-coupled distributed feedback (LC-DFB) laser. In a device featuring the effective ridge design, lateral confinement of the guided optical modes is provided by a surface etched grating, which also serves as a DFB element of the laser. Coupling and quantum efficiency of such a LC-DFB laser both improve with an increase of the lateral mode order. In accordance with this invention, a dramatic enhancement of the laser efficiency is achievable by designing it to operate in one of the higher order modes, notably the first order mode, while all the other lateral modes, including the zero order mode, are suppressed through gain-loss discrimination. In the exemplary embodiment of the invention, this enhanced efficiency technique is applied to the design of a single-mode LC-DFB laser suitable for a monolithic integration with other active and passive functional elements of photonic integrated circuits fabricated by using one-step epitaxial growth.

Enhanced efficiency laterally-coupled distributed feedback laser

The invention describes the method and apparatus for enhancement of coupling efficiency in effective-ridge laterally-coupled surface-etched grating waveguide structures, where a slab waveguide has a sequence of the periodic parallel segmented trenches etched from its top surface, such that the segments of intact material having higher refractive index than that in the surrounding segments of periodic trenches form the effective ridges which confine the optical field in and around these ridges, on one hand, and provide bidirectional coupling for the confined modes experiencing Bragg reflection from the segments of the periodic trenches, on the other. The invention discloses the designs of the multiple effective ridge laterally coupled surface-etched grating waveguide structures, which enhances the coupling efficiency as compared to a conventional single effective ridge grating design because of an intended dilution of the lateral confinement caused by the multiple effective ridges, resulting in an increase of the optical mode's overlap with the surface etched grating formed everywhere outside the effective ridges.

Coupling-enhanced surface etched gratings

Ridge and buried waveguide structures feature a plurality of trenches disposed proximate the waveguides in order to enhance confinement of an optical signal propagating within the waveguide are described. Additionally, an adiabatic transition region where the distance between trenches and waveguide is featured.

Planar waveguide structure with tightly curved waveguides

The invention describes method and apparatus for a mode converter enabling an adiabatic transfer of a higher order mode into a lower order optical mode within a photonic integrated circuit exploiting integrated semiconductor ridge waveguide techniques. As disclosed by the invention, such a mode conversion is achievable by using an asymmetric coupler methodology. In an exemplary embodiment of the invention, the invention is used to provide a low insertion loss optical connection between laterally-coupled DFB laser operating in first order mode and passive waveguide operating in the zero order optical mode. The integrated arrangement fabricated by using one-step epitaxial growth allows for a launch of the laser's light into the waveguide circuitry operating in the zero order lateral mode or efficiently coupling it to single-mode fiber, an otherwise high loss interface due to the difference in laser and optical fiber modes.

Integrated lateral mode converter

The present invention relates to a method for determining a polarization dependent characteristic of an optical or opto-electronic device. Using the Mueller matrix data, a matrix M corresponding to a difference between a first and a second transmission spectrum is determined. The first and the second transmission spectrum correspond to a first Stokes vector and a second Stokes vector, respectively, with the second Stokes vector being opposite to the first Stokes vector. Eigenvalues of the matrix M are then determined and the first Stokes vector is determined by selecting the largest eigenvalue of the matrix M and determining a corresponding eigenvector. The second Stokes vector is then determined as a vector opposite to the first Stokes vector. Finally, the data indicative of the polarization dependent characteristic of the device are determined using the first and the second Stokes vector and the Mueller matrix data. This method is highly beneficial by providing highly accurate data related to polarization dependent parameters while simultaneously providing a nearly instantaneous result with minimum computational effort.

Method and system for determining a polarization dependent characteristics of optical and opto-electrical devices

The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration structure composed from III-V semiconductors and grown in one epitaxial growth run, that allows for vertical and lateral splitting of optical signals co- or bi-directionally propagating in the common passive waveguide into plurality of the vertically integrated passive or active wavelength-designated waveguides, therefore, enabling the wavelength-designated waveguides operating in different wavelengths to be monolithically integrated onto the same substrate and connected to the shared passive waveguide. In the exemplary embodiments of the invention, two active wavelength-designated waveguides, each of which either laser or photodetector, are vertically integrated with a common passive waveguide connected to the input/output optical port shared by both operating wavelengths, to form a single-fiber, two-wavelength receiver (both wavelength-designated waveguides are waveguide photodetectors) or transmitter (both wavelength-designated waveguides are edge-emitting semiconductor injection lasers) or transceiver (one wavelength-designated waveguide is waveguide photodetector and the other&#x2014;edge-emitting semiconductor injection laser). Advantageously to the previous art, the proposed vertical splitting and lateral routing allows for a reduced footprint size while greatly improving design flexibility and/or device performance.

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Ottawa, Canada

Kirill Pimenov