University of Nebraska

Intel Corporation

Johns Hopkins University

Quantum Devices, Inc.

Kirill D Belashchenko

Christian Binek

Dmitri E Nikonov

Peter A Dowben

Jeffry A Kelber

Oleg Tchernyshyov

Mike Street

Alexey Kovalev

Peter Arnold Bowden

Aleksander Wysocki

Sai Mu

A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic (MEAF) active layer. An extension of this architecture applies to multiple-gate linear arrays that can offer advantages in memory density, programmability, and logic functionality. Applying a small anisotropic in-plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching.

Magnetoelectric memory cells with domain-wall-mediated switching

A magnetoelectric composition of boron and chromia is provided. The boron and chromia alloy can contain boron doping of 1%-10% in place of the oxygen in the chromia. The boron-doped chromia exhibits an increased critical temperature while maintaining magnetoelectric characteristics. The composition can be fabricated by depositing chromia in the presence of borane. The boron substitutes oxygen in the chromia, enhancing the exchange energy and thereby increasing N&#xe9;el temperature.

Magnetoelectric chromia having increased critical temperature

The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS, WS, MoSe, WSeand mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.

Magneto-electric voltage controlled spin transistors

Growing community of inventors

Lincoln, NE, United States of America

Kirill D Belashchenko