Growing community of inventors

Hillsboro, OR, United States of America

Kirby Maxey

Average Co-Inventor Count = 9.56

ph-index = 1

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 0

Kirby MaxeyChelsey Dorow (13 patents)Kirby MaxeyUygar E Avci (12 patents)Kirby MaxeyShriram Shivaraman (10 patents)Kirby MaxeyCarl H Naylor (10 patents)Kirby MaxeySudarat Lee (10 patents)Kirby MaxeyAshish Verma Penumatcha (9 patents)Kirby MaxeyTanay Gosavi (7 patents)Kirby MaxeyChia-Ching Lin (7 patents)Kirby MaxeyKevin P O'brien (7 patents)Kirby MaxeyKevin O'Brien (6 patents)Kirby MaxeyMatthew V Metz (3 patents)Kirby MaxeySeung Hoon Sung (2 patents)Kirby MaxeyTristan A Tronic (2 patents)Kirby MaxeyJack T Kavalieros (1 patent)Kirby MaxeyIan A Young (1 patent)Kirby MaxeyPatrick Theofanis (1 patent)Kirby MaxeyDevin Merrill (1 patent)Kirby MaxeyTobias Brown-Heft (1 patent)Kirby MaxeyKirby Maxey (14 patents)Chelsey DorowChelsey Dorow (14 patents)Uygar E AvciUygar E Avci (123 patents)Shriram ShivaramanShriram Shivaraman (52 patents)Carl H NaylorCarl H Naylor (31 patents)Sudarat LeeSudarat Lee (12 patents)Ashish Verma PenumatchaAshish Verma Penumatcha (36 patents)Tanay GosaviTanay Gosavi (143 patents)Chia-Ching LinChia-Ching Lin (53 patents)Kevin P O'brienKevin P O'brien (14 patents)Kevin O'BrienKevin O'Brien (96 patents)Matthew V MetzMatthew V Metz (303 patents)Seung Hoon SungSeung Hoon Sung (144 patents)Tristan A TronicTristan A Tronic (27 patents)Jack T KavalierosJack T Kavalieros (624 patents)Ian A YoungIan A Young (258 patents)Patrick TheofanisPatrick Theofanis (6 patents)Devin MerrillDevin Merrill (6 patents)Tobias Brown-HeftTobias Brown-Heft (4 patents)
..
Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. Intel Corporation (14 from 54,320 patents)


14 patents:

1. 12432976 - Thin film transistors having strain-inducing structures integrated with 2D channel materials

2. 12396217 - Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication

3. 12396254 - Stacked 2D CMOS with inter metal layers

4. 12369382 - Integrated circuit structures with graphene contacts

5. 12349438 - Contact gating for 2D field effect transistors

6. 12324204 - Transistors including two-dimensional materials

7. 12310101 - Gate dielectrics for complementary metal oxide semiconductors transistors and methods of fabrication

8. 12278289 - TMD inverted nanowire integration

9. 12266720 - Transistors with monocrystalline metal chalcogenide channel materials

10. 12266712 - Transition metal dichalcogenide nanosheet transistors and methods of fabrication

11. 12176388 - Transition metal dichalcogenide nanowires and methods of fabrication

12. 12125895 - Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabrication

13. 11935956 - TMD inverted nanowire integration

14. 11908950 - Charge-transfer spacers for stacked nanoribbon 2D transistors

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10/4/2025
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