Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Kinya Usuda

Fumiaki Shigemitsu

Takashi Tsuchiya

Toshiaki Shinozaki

Yoshihide Kato

Kei Kirita

Yasuo Matsuoka

Hiroyuki Hasebe

Masayuki Suzuki

Satoshi Masuda

Tatsuo Nomaki

Michiro Takano

A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

Method and apparatus for forming resist pattern

Prior to etching by an etchant, a low concentration solution of cerium ammonium nitrate [(NH.sub.4).sub.2 Ce(NO.sub.5).sub.6 ] is caused to adhere onto an electron-beam resist pattern, thus to improve hydrophilic property of the resist pattern. As a result, a metal thin film is etched in conformity with the resist pattern. Thus, a fine pattern of the metal thin film is provided.

Method of forming pattern and apparatus for implementing the same

A method of forming a resist pattern on a substrate such as a mask substrate for use in manufacturing semiconductor devices or a semiconductor substrate at the intermediate step for manufacturing semiconductor devices includes the steps of baking a resist coated on the substrate at a temperature in its Tg region (glass transition temperature region) or higher temperature, and annealing the resist at a temperature within the Tg region.

Method of forming resist pattern

A resist is coated on a photomask and a predetermined pattern is exposed on the resist. The photomask is dipped in a developing solution together with an electrode which exhibits a stable potential in the developing solution, so that a change in current flowing between the photomask and the electrode is detected on the basis of a change in capacitance between the photomask and the developing solution, while developing the pattern formed on the resist. The current abruptly changes (e.g., exhibits its peak) around the time at which the resist is removed and a chromium underlying layer of the photomask is exposed. The time obtained by multiplying the time until the change appears by a predetermined coefficient is regarded as the time corresponding to the end of the developing step.

Pattern developing process and apparatus therefor

An automatic developing apparatus comprises a developing tank and a pipe for introducing a developing solution into the developing tank. The developing tank is constituted by a stage on which a substrate is to be set, and a processing case movable relative to the stage, to receive said stage.

Automatic developing apparatus

A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of the electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

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Yokohama, Japan

Kinya Usuda