Denso Corporation

Nippondenso Co., Ltd.

Nippon Soken, Inc.

Saga University

Kinya Atsumi

Katsunori Abe

Yuji Kimura

Hitoshi Yoshida

Shinji Yoshihara

Morihiro Atsumi

Noriyuki Matsushita

Novuei Ito

Tadashi Hattori

Nobuei Ito

Hiroshi Muto

Yasuo Souki

Keisuke Ohto

Tetsuo Toyama

Minoru Kurata

Katsutoshi Inoue

Hisaya Kato

Hidetaka Kawakita

Tetsuo Fujii

Minekazu Sakai

Minoru Nishida

Toshiyuki Morishita

Yoshiki Ueno

Yoshinori Ootsuka

Naohito Mizuno

Takekazu Terui

Tetsuro Kikuchi

Yoshitaka Gotoh

Sumitomo Inomata

Kenji Kondo

Masumi Arai

Hiroaki Fukuda

Yoshinori Otsuka

Yasuki Shimoyama

Michiyo Mizutani

A noble metal adsorption agent includes algae or residue of algae having an amino group as a functional group. A noble metal is retrieved by a method including: adsorbing the noble metal on the noble metal adsorption agent; and retrieving the noble metal. The noble metal is solved in a liquid. Thus, by using the noble metal adsorption agent, the noble metal is selectively retrieved.

Adsorption agent for noble metal, method for manufacturing the same, and method for recovering noble metal

An adsorbent contains a carbohydrate having an ether linkage. Alternatively, an adsorbent contains a carbohydrate having a cross-linkage formation produced by a dehydration reaction using a strong acid. In collection of a precious metal using the adsorbent, the adsorbent selectively adsorbs a precious metal dissolved in a solution.

Adsorbent and method of collecting precious metal using the same

A semiconductor device has a semiconductor wafer having sensing portions exposed on a surface thereof and an adhesive sheet attached to the semiconductor wafer as a protective cap to cover the sensing portions. The adhesive sheet is composed of a flat adhesive sheet and adhesive disposed generally on an entire surface of the adhesive sheet. Adhesion of the adhesive is selectively reduced by UV irradiation to have adhesion reduced regions, and the adhesion reduced regions face the sensing portions. The protective cap can be produced with high productivity, and securely protect the sensing portions when the semiconductor wafer is diced and is transported.

Semiconductor device having a flat protective adhesive sheet

In performing an light emitting operation using a plurality of semiconductor light-emitting devices, these semiconductor light-emitting devices are lighted up such that the driving current is lessened and the life time of the devices is prevented from being shortened and lights can be emitted to a remote site without reducing an amount of lights. Semiconductor laser devices to , which emit lights through independent lenses to , are connected in series to each other and connected to a signal generating circuit , serving as a power supply, so as to perform pulse lighting, whereby making it possible to light up three semiconductor laser devices simultaneously at a driving current corresponding to one semiconductor laser device. A package of semiconductor laser devices to comprises three lead terminals, and an electrical connection to two lead terminals, which are electrically insulated from a metallic base, is established. If a light collection point P is positioned in the midway of the detection distance range, the shifting quantity of the laser beams is minimized over substantially the entire area so that the amount of lights can be suppressed.

Semiconductor light projection apparatus and distance measurement apparatus

A high power stripe-geometry heterojunction laser diode device is provided which may be employed in a radar system designed to measure the distance to a target. The laser diode device has an electric circuit path extending from a first electrode connected to a voltage source to a second electrode connected to ground and features addition of a resistance of 1 m&OHgr; or more to the electric circuit path to provide uniform current distribution in an active layer for emitting a high density laser beam.

Stripe-geometry heterojunction laser diode device

An active layer in which laser light is generated by injecting driving current therein is sandwiched between semiconductor layers. The active layer has a multi-quantum-well structure, and the layers located at both sides of the active layer are made of an AlGaAs-based material. Refractive indices of the layers are set asymmetrically with respect to the active layer by properly selecting aluminum-mixing ratios in AlGa. Since the light generated in the active layer is distributed more in a layer having a higher refractive index, a peak of the light distribution is shifted from the active layer into the layer having a higher refractive index. Thus, energy concentration to the active layer is avoided. A thickness of the layer having a higher refractive index may be made thicker to further enhance the energy concentration shift from the active layer.

Semiconductor laser device

A heat resisting resin sheet is bonded to a semiconductor chip as a protective cap for protecting a beam structure provided on the semiconductor chip, through a heat resisting adhesive. The heat resisting resin sheet is composed of a polyimide base member and the heat resisting adhesive is composed of silicone adhesive. The heat resisting resin sheet is not deformed during a manufacturing process of the semiconductor chip. In addition, grinding water does not invade into the semiconductor chip during dicing-cut.

Semiconductor device with a protective sheet to affix a semiconductor chip

Semiconductor device with flat protective adhesive sheet and method of manufacturing the same

A stack type semiconductor laser device, which has a large overlapped area of beam patterns made by laser beams irradiated from a plurality of semiconductor laser elements, is disclosed. A first semiconductor laser element is formed on an N-type semiconductor substrate and is bonded to a surface of a pedestal at the side of an N-type electrode thereof through a solder layer. On the other hand, a second semiconductor laser element is differently formed on a P-type semiconductor substrate, and an N-type electrode thereof is bonded to a P-type electrode of the first semiconductor laser element through a solder layer in such a way that the laser beam irradiation planes of both semiconductor laser elements face in the same direction.

Stack type semiconductor laser device

A material and method for bonding a semiconductor device to a pedestal, which can obtain a sufficient bonding strength and stable electric contact, are disclosed. On an n-type electrode constituting an ohmic electrode for a semiconductor laser device are formed a Ni layer and an Au-Sn solder layer. Then, the solder layer is melted and bonded to a heat sink provided with Au-plating. The film thickness of the Ni layer is set to approximately 500 .ANG. or more. When the solder layer is melted, Ni in the Ni layer diffuses into the solder layer and Sn in the solder layer diffuses into the Ni layer. By this mutual diffusion, bonding strength and wettability between the semiconductor device and pedestal can be improved. In addition, by setting the composition ratio of Ni layer to the Au-Sn solder layer to 1.3 wt % or more and under 10 wt %, bonding can be performed at a lower melting point and concurrently a higher bonding strength can be obtained.

Bonding material and bonding method for electric element

A high-output semiconductor laser element has one of a Cr/Pt/Au electrode and Cr/Ni/Au electrode as a P-type electrode to provide an electrode construction that is robust with respect to heat, high in reliability and stable for a long period of time. The P-type electrode is disposed on an N-type substrate via an epitaxial layer and defines a stripe 41 having a width of 100 .mu.m or more.

High output semiconductor laser element having robust electrode structure

The semiconductor laser device provides a large output laser beam approximating a circular shape. Formed on an n-GaAs substrate is an n-GaAs layer, further thereon in mesa type with an n-Al.sub.0.4 Ga.sub.0.6 As clad layer, an n-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, an active layer formed of Al.sub.0.2 Ga.sub.0.8 As/GaAs multi-quantum well structure, a p-Al.sub.0.2 Ga.sub.0.8 As optical guide layer, a p-Al.sub.0.4 Ga.sub.0.6 As clad layer, and a p-GaAs layer. A thickness of the active layer is made equal to 127.5 nm, and a sum of thicknesses of the active layer and the optical guide layers and is made equal to or more than 1.5 .mu.m. On the n-GaAs layer and the upper surface of mesa shaped portion are formed an insulating film and a p-type electrode, the stripe width of which is equal to 400 .mu.m.

An EL element is composed of a glass base plate, a transparent electrode, a dielectric body layer, a luminous body layer, another dielectric body layer and a rear electrode which are piled on each other in order. An an electron inflow restraining layer is formed between the luminous body layer and another dielectric body layer. The luminous body layer is formed by doping Mn into a ZnS crystal and the electron inflow restraining layer is formed by irradiating gas ions of high energy to the surface of the luminous body layer. The electron inflow restraining layer restrains the inflow of electrons supplied to the luminous body layer while being accelerated by an electric field formed between the transparent electrode and the rear electrode.

Method of making a thin film electroluminescence element

A machine oil deterioration detection apparatus having a copper thin film resistor formed on an electrically insulating holding member and immersed in a machine oil. The copper thin film resistor is corroded by acid produced in accordance with deterioration of the machine oil, thus changing the resistance of the resistor. The change in resistance is detected by a detection circuit, connected to the thin film resistor, for detecting the resistance of the thin film resistor.

Machine oil deterioration detection

A sintered ceramic electric heater suitably applicable to a glow plug of a diesel engine has a heater element formed of an electrically conductive sintered ceramic integrally sintered with a support member made of an electrically insulating sintered ceramic material. The heater element is formed as a sintered body of a mixture of MoSi.sub.2 powder having an average diameter not greater than 2 .mu.m and 35 to 75 mol % of Si.sub.3 N.sub.4 powder. The average particle diameter of the Si.sub.3 N.sub.4 powder is at least twice as large as that of the MoSi.sub.2 powder so that electrically interconnecting MoSi.sub.2 particles surround scattered Si.sub.3 N.sub.4 particles whereby the resistance of the heater element becomes equal to that of MoSi.sub.2 and the temperature coefficient of the heater element is increased.

Growing community of inventors

Okazaki, Japan

Kinya Atsumi