Jsr Corporation

Japan Synthetic Rubber Co., Ltd.

Other

Kinji Yamada

Michinori Nishikawa

Eiji Hayashi

Akihiro Kojima

Masayuki Takahashi

Atsushi Shiota

Takahiko Kurosawa

Takashi Okada

Yasutake Inoue

Toshihiro Ogawa

Manabu Sekiguchi

Tomotaka Shinoda

Minoru Matsubara

Matthias Patz

Kohei Goto

Toshinori Sakagami

Keiji Konno

Toshiyuki Akiike

Kaori Shirato

Kouichi Hasegawa

Masahiko Ebisawa

Seo Youngsoon

Satoko Hakamatsuka

Kouhei Gotou

Naoki Sugiyama

Rempei Nakata

Hideshi Miyajima

Hikaru Sugita

Kouji Tamori

Hozumi Sato

Yoshihisa Ohta

Akira Nishikawa

Nobuhide Yamada

Makoto Sugiura

Kiyoshi Kasai

Yuichi Hashiguchi

Junji Kawai

Tetsuo Fukuta

Masaki Nagata

Satoshi Katayose

Mayumi Kakuta

Mutsuhiko Yoshioka

Noriyasu Shinohara

Koichi Nagano

Kentarou Tamaki

Akio Saito

Tadahiro Shiba

Youngsoo Seo

Noriyasu Sinohara

Yoshihisa Nakase

Katsuyuki Kakinoki

Hidenori Suzuki

Yoshiji Yuumoto

Youngsoon Seo

Tomonobu Shimizu

Tatuya Shimizu

Mibuko Kaburaki

Momoko Okamura

Siniti Suyama

Kouchi Hasegawa

A process for producing carrier polymer particles comprising covering the surface of organic polymer particles having a particle diameter of 0.1 to 20 micrometers with a saccharide by chemically bonding the organic polymers and the saccharide.

Carrier polymer particle, process for producing the same, magnetic particle for specific trapping, and process for producing the same

A biological substance related article includes a coating formed by causing a biological substance adsorption preventive coating composition to come in contact with a surface of the biological substance related article and heating the composition, the biological substance adsorption preventive coating composition including: (A) a copolymer obtained by copolymerizing raw material monomers including a monomer A1 shown by the following general formula (1) and an active hydrogen group-containing monomer A2; (B) a crosslinking agent reactive with an active hydrogen group; and (C) a solvent.CH&#x2550;CRCOOROR&#x2003;&#x2003;(1)(Rrepresents an alkylene group having 1 to 4 carbon atoms, Rrepresents an alkyl group having 1 to 4 carbon atoms, and Rrepresents a hydrogen atom or a methyl group).

Biological substance related article and method of manufacturing the same, and biological substance adsorption preventive coating composition and method of using the same

A chemical mechanical polishing stopper film comprising at least one organic polymer, said film having a dielectric constant of 4 or lower, and a chemical mechanical polishing method. The chemical mechanical polishing method comprises forming a chemical mechanical polishing stopper film comprising at least one organic polymer on an insulating film so that the stopper film is interposed between the insulating film and a metal film to be removed by chemical mechanical polishing, and then removing the metal film with a chemical mechanical polishing slurry.

Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing

A composition for film formation which comprises:

Composition for film formation, method of film formation, and silica-based film

An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided. The insulating film is obtained by a method comprising: (A) a step of subjecting a substrate to at least either of (A-1) at least one treatment selected from the group consisting of an ultraviolet irradiation treatment, an oxygen plasma treatment, a nitrogen plasma treatment, a helium plasma treatment, an argon plasma treatment, a hydrogen plasma treatment and an ammonia plasma treatment, and (A-2) a treatment with at least one of alkoxysilane compound having a reactive group and a product of the hydrolysis and condensation thereof; and (B) a step of applying a composition for film formation which comprises an organic solvent and either or both of at least one compound selected from the group consisting of compounds represented by the general formulae (1) to (4) as described hereinabove, and a hydrolysis/condensation product obtained by hydrolyzing and condensing the at least one compound, to the substrate and heating the resulting coating.

Method of film formation, insulating film, and substrate for semiconductor

a composition for film formation which can be cured in a short time period and give a film having a low dielectric constant and excellent in heat resistance, adhesion and cracking resistance, a polymer for use in the composition and a process for producing the polymer. The composition prepared by dissolving the polymer having specific repeating units in a solvent has excellent film-forming properties. The polymer has repeating units represented by the following general formula (1):wherein Z and Y are as defined hereinabove.

Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film

A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly(arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.

Composition for film formation and material for insulating film formation

A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.

Stacked film, insulating film and substrate for semiconductor

A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500&deg; C. and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.

Method for the formation of silica film, silica film, insulating film, and semiconductor device

A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.

Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor

A method of manufacturing an insulating film-forming material comprising a curable composition comprisING (A) an inorganic polymer compound or an organic polymer compound and (B) an organic solvent, which comprises treating the curable composition with a zeta potential-producing filter material. Because the curable composition has a very small content of alkali metals and heavy metals, the composition is suitably used for the manufacture of materials for forming insulating films which have a wide variety of applications in the electronic field.

Method of manufacturing material for forming insulating film

Composition for resist underlayer film and method for producing the same

A method of forming an insulating film which includes the steps of: dissolving in a solvent a first and second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times that of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film to thereby form an organosilicon oxide film. The weight-average molecular weight of the first polymer is preferably at least 100 times that of the second polymer. Thus, an insulating organosilicon oxide film having a low dielectric constant and high cracking resistance is formed from a coating fluid.

Method of forming insulating film and process for producing semiconductor device

Growing community of inventors

Ibaraki, Japan

Kinji Yamada