Applied Materials, Inc.

King Yi Heung

Garrett Ho Yee Sin

Charles C Garretson

Eric Lau

Jeonghoon Oh

Edwin C Suarez

Huanbo Zhang

Nathan Bohannon

Qing Zhang

Thomas H Osterheld

Hui W Chen

Chih Chung Chou

Daniel Redfield

Jun Qian

Jason Garcheung Fung

Ashwin Chockalingam

Wei-Cheng Lee

Shuchivrat Datar

David Chui

A polishing module includes a chuck having a substrate receiving surface and a perimeter, and one or more polishing pad assemblies positioned about the perimeter of the chuck, wherein each of the one or more polishing pad assemblies are coupled to an actuator that provides movement of the respective polishing pad assemblies in a sweep direction, a radial direction, and a oscillating mode relative to the substrate receiving surface and are limited in radial movement to about less than one-half of the radius of the chuck as measured from the perimeter of the chuck.

Polishing system with local area rate control and oscillation mode

A chemical mechanical polishing system includes a substrate support configured to hold a substrate, a polishing pad assembly include a membrane and a polishing pad portion having a polishing surface, a polishing pad carrier, and a drive system configured to cause relative motion between the substrate support and the polishing pad carrier. The polishing pad portion is joined to the membrane on a side opposite the polishing surface. The polishing surface has a width parallel to the polishing surface at least four times smaller than a diameter of the substrate. An outer surface of the polishing pad portion includes at least one recess and at least one plateau having a top surface that provides the polishing surface. The polishing surface has a plurality of edges defined by intersections between side walls of the at least one recess and a top surface of the at least one plateau.

Textured small pad for chemical mechanical polishing

Values are selected for a plurality of controllable parameters of a chemical mechanical polishing system that includes a carrier head with a plurality of zones to apply independently controllable pressures on a substrate. Data is stored relating variation in removal profile on a front surface of the substrate to variation in the controllable parameters, the data including removal at a plurality of positions on the front surface of the substrate, there being a greater number of positions than chambers. A value is determined for each parameter of the plurality of controllable parameters to minimize a difference between a target removal profile and an expected removal profile calculated from the data relating variation in removal profile on a front surface of the substrate to variation in the parameters. The value for each parameter of the plurality of controllable parameters is stored.

Selection of polishing parameters to generate removal or pressure profile

A polishing module including a chuck having a substrate receiving surface and a perimeter, and one or more polishing pad assemblies positioned about the perimeter of the chuck, wherein each of the one or more polishing pad assemblies are coupled to an actuator that provides movement of the respective polishing pad assemblies in one or more of a sweep direction, a radial direction, and a oscillating mode relative to the substrate receiving surface and are limited in radial movement to about less than one-half of the radius of the chuck as measured from the perimeter of the chuck.

Local area polishing system and polishing pad assemblies for a polishing system

A method for polishing dies locations on a substrate with a polishing module. A thickness at selected locations on the substrate is premeasured at a metrology station, each location corresponding to a location of a single die. The thickness obtained by the metrology station for the selected locations of the substrate is provided to a controller of a polishing module. The thickness corrections for each selected location on the substrate are determined. A polishing step in a polishing recipe is formed from the thickness correction for each selected location. A polishing parameter for each die location is calculated for the recipe.

Chemical mechanical polishing automated recipe generation

Selection of polishing parameters to generate removal profile

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Santa Clara, CA, United States of America

King Yi Heung