Taiwan Semiconductor Manufacturing Comp. Ltd.

King Liao

Dun-Nian Yaung

Alexander Kalnitsky

Jhy-Jyi Sze

Chen-Jong Wang

Yimin Huang

Seiji Takahashi

Jung-I Lin

Shen-Hui Hong

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric structure disposed over a substrate. A plurality of conductive interconnect layers are disposed within the dielectric structure. The plurality of conductive interconnect layers include alternating layers of interconnect wires and interconnect vias. A metal-insulating-metal (MIM) capacitor is arranged within the dielectric structure. The MIM capacitor has a lower conductive electrode separated from an upper conductive electrode by a capacitor dielectric structure. The MIM capacitor vertically extends past two or more of the plurality of conductive interconnect layers.

High density MIM capacitor structure

Growing community of inventors

Tainan, Taiwan

King Liao