Samsung Display Co., Ltd.

Kinam Kim

Younggil Park

Nari Ahn

Sooim Jeong

Jaebum Han

Junghwa Park

Moonsung Kim

A thin film transistor substrate includes a first semiconductor layer disposed on a substrate and having a first channel area, a first source area and a first drain area. A first gate electrode is disposed above the first semiconductor layer and overlaps the first channel area. A first electrode layer is disposed above the first gate electrode and electrically connects to at least one of the first source area and the first drain area. A second insulating layer is disposed between the first gate electrode and the first electrode layer. The second insulating layer includes an inorganic control layer and a first inorganic layer arranged on the inorganic control layer. The inorganic control layer has a lower density than a density of the first inorganic layer.

Thin film transistor substrate and display apparatus including the same

A display apparatus that includes a substrate, a first thin-film transistor and a second, thin-film transistor disposed on the substrate at different distances from a top surface of the substrate. A display device is electrically connected to the first thin-film transistor. The first thin-film transistor includes a first semiconductor layer in polycrystalline silicon and a first gate electrode that overlaps a channel region of the first semiconductor layer in a direction of a thickness of the substrate. The second thin-film transistor includes a second semiconductor layer including an oxide semiconductor. The first gate electrode has a stacked structure including a first layer and a second layer. The second layer includes titanium and the first layer includes a different material from the second layer.

Display apparatus

Growing community of inventors

Yongin-si, South Korea

Kinam Kim