Applied Materials, Inc.

Leland Stanford Junior University

Kin Pong Lo

Paul Brillhart

James Francis Mack

Schubert S Chu

Anzhong Chang

Edric Tong

Zhiyuan Ye

Kartik Bhupendra Shah

Lara Hawrylchak

Balasubramanian Ramachandran

Theresa Kramer Guarini

Malcolm J Bevan

Bernard Lloyd Hwang

Joseph Michael Ranish

Nyi O Myo

Zhepeng Cong

Kevin Joseph Bautista

Anhthu Ngo

Wei Liu

Yi-Chiau Huang

Satheesh Kuppurao

Xuebin Li

Zuoming Zhu

Vladimir Nagorny

Errol Antonio C Sanchez

Errol C Sanchez

Tushar Mandrekar

Swayambhu Prasad Behera

Jacob Abraham

David K Carlson

Daniel Redfield

Mark Naoshi Kawaguchi

Kailash Kiran Patalay

Brett Christian Hoogensen

Michael Olsen

Eddie Feigel

Richard Halpin

Brett Vetorino

Sandy M Wen

Aaron Muir Hunter

James D Carducci

Kallol Bera

Matthew L Miller

Michael C Kutney

Rene George

Richard Omar Collins

Karthik Ramanathan

Johanes S Swenberg

Nitin Pathak

Linlin Wang

Manish Hemkar

Steven H Kim

John K Eaton

Steven M Kim

One or more embodiments described herein generally relate to systems and methods for calibrating an optical emission spectrometer (OES) used for processing semiconductor substrates. In embodiments herein, a light fixture is mounted to a plate within a process chamber. A light source is positioned within the light fixture such that it provides an optical path that projects directly at a window through which the OES looks into the process chamber for its reading. When the light source is on, the OES measures the optical intensity of radiation from the light source. To calibrate the OES, the optical intensity of the light source is compared at two separate times when the light source is on. If the optical intensity of radiation at the first time is different than the optical intensity of radiation at the second time, the OES is modified.

Methods for calibrating an optical emission spectrometer

In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Thermal processing susceptor

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

Film thickness uniformity improvement using edge ring and bias electrode geometry

Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

Integrated epitaxy and preclean system

Edge ring

In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.

Epitaxy system integrated with high selectivity oxide removal and high temperature contaminant removal

A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.

Thin film treatment process

Embodiments disclosed herein relate to a light pipe structure for thermal processing of semiconductor substrates. In one embodiment, a light pipe window structure for use in a thermal process chamber includes a transparent plate, and a plurality of light pipe structures formed in a transparent material that is coupled to the transparent plate, each of the plurality of light pipe structures comprising a reflective surface and having a longitudinal axis disposed in a substantially perpendicular relation to a plane of the transparent plate.

Light pipe window structure for low pressure thermal processes

Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.

Upper dome with injection assembly

Gas distribution plate

Growing community of inventors

Fremont, CA, United States of America

Kin Pong Lo