Tamura Corporation

Koha Co., Ltd.

Kimiyoshi Koshi

Shinya Watanabe

Masaru Takizawa

Takekazu Masui

Yu Yamaoka

Makoto Watanabe

Kazuyuki Iizuka

Daiki Wakimoto

Haruka Matsubara

Kazuyuki IIzuka

A &#x3b2;-GaO-based single-crystal substrate includes a &#x3b2;-GaO-based single crystal, and a principal surface being a plane parallel to a b-axis of the &#x3b2;-GaO-based single crystal. A maximum value of &#x394;&#x3c9; on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The &#x394;&#x3c9; is a difference between a maximum value and a minimum value of values obtained by subtracting &#x3c9;from &#x3c9;at each of measurement positions, where &#x3c9;represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and &#x3c9;represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the &#x3c9;and the measurement positions thereof.

&#x3b2;-Ga2O3 single-crystal substrate

A method for growing a &#x3b2;-GaO-based single crystal, can provide a plate-shaped &#x3b2;-GaO-based single crystal having high crystal quality. In one embodiment, a method for growing a &#x3b2;-GaO-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a GaO-based melt, wherein the plate-shaped seed crystal includes a &#x3b2;-GaO-based single crystal having a defect density of not more than 5&#xd7;10/cmin the whole region; and pulling up the seed crystal to grow a &#x3b2;-GaO-based single crystal.

Method for growing B-Ga2O3-based single crystal

Provided is one embodiment which is a method for growing a &#x3b2;-GaO-based single crystal including contacting a flat plate-shaped seed crystal with a GaO-based melt, and pulling up the seed crystal such that a flat plate-shaped &#x3b2;-GaO-based single crystal having a principal surface which intersects a surface is grown without inheriting a crystal information of a vaporized material of the GaO-based melt adhered to the principal surface of the seed crystal, wherein when growing the &#x3b2;-GaO-based single crystal, a shoulder of the &#x3b2;-GaO-based single crystal is widened in a thickness direction (t) thereof.

Method for growing beta-Ga2O3-based single crystal, and beta-Ga2O3-based single crystal substrate and method for producing same

Provided is one embodiment which is a method for growing a &#x3b2;-GaO-based single crystal which uses the EFG method and includes raising a GaOmelt inside a crucible up to a die opening via a die slit such that a seed crystal is contacted with the GaO-based melt in the opening of the die with a horizontal position of the seed crystal shifted in a width direction (W) from a center in the width direction (W) of the die, and pulling up the seed crystal contacting the GaO-based melt so as to grown a &#x3b2;-GaOsingle crystal.

[object Object]

A &#x3b2;-GaO-based single crystal substrate includes an average dislocation density of less than 7.31&#xd7;10cm. The average dislocation density may be not more than 6.14&#xd7;10cm. The substrate may further include a main surface including a plane orientation of (&#x2212;201), (101) or (001). The substrate may be free from any twinned crystal.

&#x3b2;-Ga2O3-based single crystal substrate

A &#x3b2;-GaO-based single crystal substrate includes a &#x3b2;-GaO-based single crystal. The &#x3b2;-GaO-based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.

Growing community of inventors

Tokyo, Japan

Kimiyoshi Koshi