Nec Corporation

Kimiyoshi Fukatsu

Naofumi Suzuki

Masayoshi Tsuji

Kenichiro Yashiki

Hiroshi Hatakeyama

Takayoshi Anan

Takeshi Akagawa

Ryota Yuge

Akio Toda

Tomo Tanaka

Shinji Fujieda

An infrared sensor including: a detection substrate that includes a first substrate in which infrared detection elements are arranged in a lattice shape and first terminals each of which is associated with one of the infrared detection elements are arranged; a readout substrate that includes a second substrate in which second terminals each of which is associated with one of the first terminals are arranged and a readout circuit that reads an electrical signal based on infrared light detected by each one of the infrared detection elements is formed; and bumps that electrically connect each one of the first terminals to one of the second terminals associated with the one of the first terminals, in which at least one of the first terminals, the second terminals, or the bumps is partially arranged at a position between the infrared detection elements that are adjacent in a top view.

Infrared sensor and imaging apparatus

The present invention relates to a negative electrode material for secondary batteries, comprising graphite; wherein

Negative electrode material for secondary battery, and secondary battery

The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength &#x3bb;to be given as 0.9&#xd7;&#x3bb;&#x2266;L&#x2266;1.1&#xd7;&#x3bb;, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nand n; the average refractive index within an optical path length &#x3bb;/4 in the semiconductor in contact with the dielectric DBR by n; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nand n, respective materials to be used are selected so as to satisfy the following conditions (1) and (2):()()(),&#x2003;&#x2003;(1)

Surface-emission type semiconductor laser

An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of InGaAs (0.15&#x2266;x&#x2266;0.35), the first surface-emitting laser having an oscillation wavelength ranging from 1000 nm to 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface-emitting laser. The first optical receiver is connected to the first optical transmitter by a first optical transfer path, and receives the optical signal transmitted from the first optical transmitter through the first optical transfer path.

Optical communication system and optical transmitter

A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index nof the resonator unit is larger than either the first layer or the second layer, and an optical length nL of the optical resonator unit has a relationship with an oscillating wavelength &#x3bb; of the surface emitting laser to satisfy the following relationship: 0.5&#x3bb;&#x3c;nL&#x2266;0.7&#x3bb;.

Surface emitting laser

It is enabled to provide that a light emitting device have an electron blocking layer () positioned between tunnel junctions () and an active layer (). The electron blocking layer () has an energy of conduction band edge higher than that of the active layer (), and is composed of a material containing substantially no aluminum. It suppresses leakage of electrons from an n-type layer through a p-layer to an n-type layer. It is also enabled to provide that a light emitting device is capable of preventing the electron blocking layer () from being oxidized in the process of manufacturing by using a layer containing no aluminum for the electron blocking layer ().

Growing community of inventors

Tokyo, Japan

Kimiyoshi Fukatsu