Toyoda Gosei Co., Ltd.

Toyota Gosei Co., Ltd.

Kimiyasu Ide

Shingo Totani

To remove the mask formed by nanoimprinting after dry etching. A mask is formed by nanoimprinting on a back surface of a substrate. Subsequently, dry etching is performed using chlorine gas. Dry etching is finished with the mask kept remaining. A deteriorated layer is formed on the surface of the remaining mask. The mask is irradiated with plasma generated using a mixture gas of nitrogen and oxygen. Thereby, the deteriorated layer formed on the surface of the mask is removed by evaporation. The mask is removed by dissolving in BHF (buffered hydrofluoric acid).

Method for producing light-emitting device

The present invention provides a method for producing a semiconductor light-emitting device in which fine protrusions and recesses are formed on a bottom surface between the protrusions on a surface of a substrate. The method comprises forming a first resist pattern on a nitrogen surface of the substrate, forming a plurality of first protrusions on the nitrogen surface of the substrate, and forming a plurality of second protrusions on the nitrogen surface of the transparent nitride-based substrate. In forming the first protrusions, the plurality of first protrusions and a bottom surface between the first protrusions are formed by dry etching. In forming the second protrusions, the plurality of second protrusions having a height lower than the height of the first protrusions are formed on the bottom surface by wet etching without removing the first resist pattern subjected to dry etching.

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Kiyosu, Japan

Kimiyasu Ide