Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Kimitoshi Satou

Mika Okumura

Makio Horikawa

Yasuo Yamaguchi

A recessed portion is provided in first and second insulating films, the first insulating film being stacked on a semiconductor wafer, the second insulating film being stacked on the first insulating film. The first and second insulating films are processed to form wiring in a formation region of the semiconductor wafer in which an acceleration sensor is to be formed. After a sacrificial film is stacked on the wiring and processed, a conductive film is stacked on the wiring and processed to form a plurality of thin film structures in the formation region. The recessed portion surrounds the formation region.

Element wafer and method for manufacturing the same

In an electrostatic-capacitance-type acceleration sensor, water, etc. penetrating into a sealed space incorporating an acceleration detector having a movable electrode, and sticking of the movable electrodeto a capdue to static charge accumulated on the capduring the anodic bonding being performed are prevented. A conductive shielding filmthat can be extendedly transformed on the entire inner face of the capconstituting the sealed space is provided, which is not only extendedly arranged so as to be sandwiched between a bonding frameand the cap, but also electrically connected to the movable electrode; thereby, even if unevenness exists on the surface of the bonding frame, not only sufficient anodic bonding between the bonding frameand the capbecomes possible, but also the electric field due to the static charge accumulated in the capcan be shielded.

Electrostatic-capacitance-type acceleration sensor

A thin film structure including a conductive thin film provided on a substrate and configured to be displaced in response to an applied acceleration, a pair of electrode pads formed on the substrate such that the pair of electrode pads are disposed on respective sides of the thin film, and a nonconductive film covering a top surface of the thin film and the side of the thin film facing the electrode pads. A top surface of the conductive thin film being higher than top surfaces of the electrode pads.

Thin film accelerometer

A semiconductor device manufacturing method includes forming an insulating layer on a semiconductor substrate, forming, over the insulating layer, a first sacrificial layer having a first opening, and forming, on the sacrificial layer, a first electrode and a dummy body between the first electrode and the first opening. A photoresist is formed on the structure obtained by the previous steps, the photoresist having a second opening that opens inside the first opening. The insulating layer is etched using the photoresist as a mask to expose the semiconductor substrate, and a second electrode is formed in contact with the exposed semiconductor substrate. The sacrificial layer is removed.

Semiconductor device manufacturing method

A small, precise semiconductor pressure sensor has a flat, thin diaphragm of uniform thickness that is formed by a simple process. A first silicon substrate and a second silicon substrate are bonded to each other with an interface insulating film interposed between them and circuitry including gauge resistors is fabricated on the primary surface of the second silicon substrate. The interface insulating film may be disposed in the recess of a vacuum chamber and may have a two layer structure. If alignment marks are formed, the circuitry can be accurately formed relative to the vacuum chamber.

Growing community of inventors

Tokyo, Japan

Kimitoshi Satou