Mitsubishi Electric Corporation

Oki Data Corporation

Mitsubishi Denki Kabushiki Kaisha

Oki Electric Industry Co., Ltd.

Ueda Seitai Co., Ltd.

Kimitoshi Sato

Yasuo Yamaguchi

Mika Okumura

Makio Horikawa

Takeshi Murakami

Hiroyuki Tsuzuki

Yasuo Kurosaki

Katsuhiko Ueda

A semiconductor pressure sensor includes: a first silicon substrate including a first recessed part; and a second silicon substrate including a diaphragm covering a first space in the first recessed part, the second silicon substrate being configured to hermetically seal the first space. In cross-section, a plurality of second spaces are hermetically sealed in a state of being separated away from the first space between the first silicon substrate and the second silicon substrate, and are provided in one of or each of a first end side and a second end side of the first space.

Semiconductor pressure sensor and manufacturing method of semiconductor pressure sensor

An image formation apparatus according to an embodiment may include: a discharge unit configured to transport printed media from a discharge port to an outside; and a controller configured to cause the discharge unit (i) to perform a holding operation to hold a part of a first group of printed media corresponding to a first print pause sheet number set in a setting unit at the discharge port by the discharge unit, and (ii) when the part of the first group of printed media is removed from the discharge port, to transport a second group of printed media corresponding to a second print pause sheet number set in the setting unit from the discharge port toward the outside and to perform the holding operation to hold a part of the second group of the printed media with being exposed to the outside from the discharge port.

Image formation apparatus

A semiconductor pressure sensor includes: a first semiconductor substrate; an insulating film provided on the first semiconductor substrate and including a main opening, an introduction opening, and a connection opening which connects the main opening and the introduction opening; a second semiconductor substrate bonded to the first semiconductor substrate with the insulating film interposed therebetween and including a diaphragm provided above the main opening and a receiving pressure inlet connected to the introduction opening; and a gauge resistor provided on the diaphragm and converting a deformation amount of the diaphragm into change in electrical characteristics.

Semiconductor pressure sensor and method for manufacturing the same

A semiconductor pressure sensor includes: a first semiconductor substrate having a surface; an oxide film provided on the surface of the first semiconductor substrate and having a cavity; a second semiconductor substrate bonded to the first semiconductor substrate via the oxide film and having a diaphragm above the cavity; and a piezoelectric device provided on the diaphragm, wherein no recess is provided in the surface of the first semiconductor substrate within a region of the diaphragm, and a stress mitigating groove is provided in the oxide film outside and around the diaphragm.

Semiconductor pressure sensor

There is provided a sealing apparatus for a cryopreservation bag, with which a sealing treatment of an inlet/outlet of the cryopreservation bag is carried out automatically and anyone can safely and properly carry out the sealing treatment. The sealing apparatus includes: a bag clamping device; a laser device; and a scanning structurefor moving the bag clamping device, for example. The bag clamping deviceincludes a fixed pinching block, a movable pinching block, and a clamp actuator. The laser deviceincludes a laser oscillatorand a condensing lens. The fixed pinching blockincludes a block base, a heat radiator, and a heat radiator holder. An infrared laser beam is radiated to a sealed portionof the bag to form a seal beadfor sealing in a state in which the sealed portionis pinched and fixed by the heat radiatorand the movable pinching blockand while the bag clamping device, for example, is moved by the scanning structure

Sealing apparatus for cryopreservation bag

An image processing apparatus includes an executing circuitry, a macro executing circuitry, and a managing circuitry. The executing circuitry executes one or more types of image processing. The macro executing circuitry executes, with the executing circuitry, a first macro to which predetermined one or more types of image processing out of the one or more types of image processing are assigned. The predetermined one or more types of image processing includes a first type of image processing. The managing circuitry manages execution authority setting of the first type of image processing and execution authority setting of the first macro, and temporarily changes the execution authority setting of the first type of image processing on a basis of the execution authority setting of the first macro upon the execution of the first macro by the macro executing circuitry.

Image processing apparatus including an execution authority setting having a permitted and not a permitted setting

A semiconductor pressure sensor includes a fixed electrode placed at a principal surface of a semiconductor substrate, and a diaphragm movable through an air gap in a thickness direction of the semiconductor substrate at least in an area where the diaphragm is opposed to the fixed electrode. The diaphragm includes: a movable electrode; a first insulation film placed closer to the air gap with respect to the movable electrode; a second insulation film placed opposite to the air gap with respect to the movable electrode, the second insulation film being of a same film type as the first insulation film; and a shield film that sandwiches the second insulation film with the movable electrode.

In a semiconductor pressure sensor, a fixed electrode is formed as the same layer as a diffusion layer formed to extend from a surface of a semiconductor substrate to inside of the semiconductor substrate. A void is formed by removing a sacrifice film, which is a region constituted of the same film as a floating gate electrode. A movable electrode includes an anchor portion which supports the movable electrode via the void relative to the fixed electrode and in which the sacrifice film is at least partially opened. The anchor portion has a first anchor provided to divide the movable electrode into a plurality of movable electrode units when viewed in a plan view such that one pair of adjacent movable electrode units of the plurality of movable electrode units divided share the same first anchor.

Semiconductor pressure sensor and method of fabricating same

At a pressure sensor region, a pressure sensor including a fixed electrode, a vacuum chamber and a movable electrode is formed at a pressure sensor region, whereas a memory cell transistor and a field effect transistor are formed at a MOS region. An etching hole communicating with the vacuum chamber is sealed by a first sealing film and the like. The vacuum chamber is formed by removing a portion of a film identical to the film of a gate electrode of the memory cell transistor.

Semiconductor pressure sensor and fabrication method thereof

A user key storage unit stores at least one user key corresponding to usage authorities of image data. A first encryption unit encrypts the image data using a first encryption key. A second encryption key creation unit creates a second encryption key assigned to each usage authority. A key-storage data creation unit creates a key-storage data for each usage authority by encrypting the first encryption key and authority information using the second encryption key. A user-supplementary data creation unit creates user-supplementary data for each user key. A device-supplementary data creation unit creates device-supplementary data for at least one usage authority and for at least one device key. A data output unit outputs encrypted image data with the key-storage data, the user-supplementary data and the device-supplementary data.

Image data processing device and image data processing program

An image processing apparatus includes a processor configured to assign image data a first restriction to restrict a first operation on the image date and a second restriction to restrict a second operation on the image data, an output unit configured to output the image data with the first restriction and second restriction, a restriction information storage unit configured to store therein a preset first password to allow the first operation and a preset second password allow the second operation, an entry unit configured to prompt a user to enter a new first password to allow the first operation and a new second password to allow the second operation, and a selector configured to allow the user to select the preset passwords or the new passwords to be used for the assignment of the first restriction and the second restriction to the image data by the processor.

Image processing apparatus

A method for manufacturing a semiconductor device includes: simultaneously forming first and second well regions on a semiconductor substrate, wherein the second well region becomes a fixed electrode; simultaneously forming a first gate insulating film on the first well region and a fixed electrode protective film on the second well region; simultaneously forming a floating gate electrode on the first gate insulating film and a sacrificial film on the fixed electrode protective film; simultaneously forming a second gate insulating film on the floating gate electrode and a movable electrode protective film on the sacrificial film; simultaneously forming a gate electrode on the second gate insulating film and a movable electrode on the movable electrode protective film; removing the sacrificial film to form a void by; and vacuum-sealing the void to form a vacuum chamber.

Method for manufacturing semiconductor device

An image processing device includes an image scanning part that scans an image on a document and generates image data based on the image, an input part that accepts an input designation of a division number into which the image data generated by the image scanning part is divided, and an output resolution of output image data created based on the image data, a division processing part that creates divided image data by dividing the image data by the division number accepted by the input part, controller that calculates a scan resolution based on the division number and the output resolution of the output image data, and a data output part that outputs the divided image data as the output image data. The controller controls the image scanning part to scan the image at the calculated scan resolution.

Image processing device and image processing system

At a pressure sensor region, a pressure sensor including a fixed electrode, a void and a movable electrode is formed. At a CMOS region, a memory cell transistor and a field effect transistor are formed. An etching hole communicating with the void is closed by a first sealing film. The void is formed by removing a region of a film identical to the film of a gate electrode of the memory cell transistor. The movable electrode is formed of a film identical to the film of a gate electrode.

An image forming apparatus performs a direct printing function. A selecting section selects at least two files from a plurality of files stored in at least one of an internal storage medium and an external storage medium. A human interface receives passwords form a user. A password determining section determines whether the selected files are protected by passwords. A file extracting section extracts the selected files from an internal storage medium or external storage medium. A password verifying section determines whether passwords contained in the selected files and the passwords inputted through the human interface coincide. A printer prints the selected files. A printing controller controls the printer, causing the printer to print at least one of selected files if the password verifying section has determined that the password contained in the at least one selected file and the password inputted by the user coincide.

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Tokyo, Japan

Kimitoshi Sato