Canon Kabushiki Kaisha

Kimitaka Ozawa

Michio Yanagisawa

A lithography apparatus includes a deflector configured to deflect the charged particle beam to scan the charged particle beam on the substrate in a scan direction; a detector including a shield for shielding the charged particle beam, and configured to detect an intensity of a charged particle beam not shielded by the shield; and a processor configured to process a signal obtained with the detector scanned with the charged particle beam in the scan direction by the deflector, wherein an effective region of the shield has a shape such that a position of an edge thereof in the scan direction continuously changes along the edge, and wherein the processor is configured to process the signal with respect to a plurality of positions of the edge to determine a relationship between a command value to the deflector and a scan position of the charged particle beam.

Lithography apparatus, and article manufacturing method

The charged particle beam drawing apparatus of the present invention is a charged particle beam drawing apparatus that renders a pattern on a substrate using a charged particle beam and includes a detector that detects charge amount depending on the irradiation of the charged particle beam; first and second deflectors that are arranged along the direction of the irradiation of the charged particle beam and are capable of deflecting the charged particle beam; and a controller that controls the first and second deflectors, wherein the controller transmits a signal, which is used for switching the irradiation/nonirradiation of the charged particle beam to the detector, to the first and second deflectors at a predetermined timing, and adjusts the operation timing of the first and second deflectors based on the output of the detector depending on the signal.

Charged particle beam drawing apparatus and article manufacturing method using same

The drawing apparatus of the present inventions includes a detector having a size for which the detector can simultaneously detect two adjacent charged particle beams among a plurality of charged particle beams, and configured to detect an intensity of a charged particle beam incident thereon. A controller is configured to perform a control of a position of the detector and a control of a blanking deflector array such that one of two adjacent charged particle beams is in a blanking state and the other is in a non-blanking state on the detector that is moved, and each of the plurality of charged particle beams becomes in a blanking state and a non-blanking state sequentially, to cause the detector to perform an output in parallel with the control, and to inspect a defect in each blanking deflector in the blanking deflector array based on the output.

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Utsunomiya, Japan

Kimitaka Ozawa