Toshiba Memory Corporation

Kioxia Corporation

Kiminori Yoshino

Takahito Nishimura

Yoshihisa Kawamura

Hironobu Tamura

Hiroyuki Tanizaki

Suigen Kanda

Shimpei Miura

Hiroaki Shirakawa

Hiroshi Tsukada

A modeling method of shape-approximating a shape measurement target provided in a structure having a stack structure by a boundary line, and a standard deviation is provided as a tolerance for a measurement value of the shape measurement target, and a calculation boundary line is arranged to converge within the tolerance, and thereby, a shape of the shape measurement target is expressed.

Modeling method

According to one embodiment, a semiconductor defect inspection apparatus includes: an object-under-examination stage on which an inspection target object is placed; an X-ray irradiation unit that irradiates the object-under-examination stage with X-rays; an imaging unit that detects transmitted X-rays which passed through the inspection target object; a fluorescent X-ray detection unit that detects fluorescent X-rays which are emitted from the inspection target object by irradiation with the X-rays; and a defect detection unit that detects a first defect by an analysis of a transmission X-ray image which is obtained by performing photoelectric conversion of the transmitted X-rays and detects a second defect by a spectrum analysis of the fluorescent X-rays.

Semiconductor defect inspection apparatus and semiconductor defect inspection method

An imprinting system according to an embodiment includes a first measuring device measuring an intensity of light reflected from an end of a shot area of a monitor substrate being an area on which imprinting has been performed, a dripping condition generating device generating a dripping condition of a resin-based mask material on the basis of the measured intensity of light, and an imprinting apparatus performing imprinting using the dripping condition. The imprinting apparatus includes a second measuring device measuring an intensity of light reflected from an end of a first shot area of a production substrate being an area on which imprinting has been performed, and a control unit adjusting arrangement of droplets of a resin-based mask material ejected on a second shot area of the production substrate being an area on which imprinting is to be performed on the basis of an intensity of light reflected from an end of the first shot area.

Imprinting system, method of manufacturing semiconductor device, and recording medium

A semiconductor defect inspection apparatus for inspecting a specimen including a semiconductor substrate having a surface on which a predetermined pattern is formed, includes an excitation light irradiator, a polarization converter, a detector, and a defect analysis detector. The excitation light irradiator irradiates the specimen with excitation light along an optical path from the irradiator to the specimen and such that the excitation light is obliquely incident at a predetermined incident angle. The first polarization converter is disposed in the optical path, and converts the excitation light into s-polarized light. The detector detects photoluminescence light generated from the specimen when the excitation light is incident on the specimen. The defect analysis detector detects a dislocation defect by analyzing a photoluminescence image obtained by photoelectrically converting the photoluminescence light.

Semiconductor defect inspection apparatus

A measurement apparatus includes a filter changing a light amount of an irradiation light, a lens irradiating a surface of a material with the irradiation light, a stage changing a focus position of the irradiation light in a depth direction of the material, an interfering light extractor causing the irradiation light to interfere with reflected light from the material, a detector detecting an intensity of interfering light obtained by interference between the irradiation light and the reflected light, and a controller calculating a height of the surface of the material based on the detected intensity of interfering light while changing a relative focus position of the irradiation light with respect to the material at a given measurement point of the surface of the material. The controller controls the filter or light source based on the detected intensity of interfering light to change the light amount of the irradiation light.

Growing community of inventors

Kuwana Mie, Japan

Kiminori Yoshino