J-Devices Corporation

Renesas Electronics Corporation

Kiminori Ishido

Toshihiro Iwasaki

Hiroaki Matsubara

Shinji Watanabe

Tomoshige Chikai

Michiaki Tamakawa

Hirokazu Honda

Shingo Nakamura

Takeshi Miyakoshi

Shotaro Sakumoto

Sumikazu Hosoyamada

Yoshikazu Kumagaya

Takashi Nakamura

Hiroshi Demachi

Hiroshi Inoue

Yoshihiko Ikemoto

Yukari Imaizumi

Koichiro Niwa

A semiconductor device in which an insulating material layer contains no reinforced fibers such as a glass cloth or a nonwoven cloth and which enables miniaturization of metal thin-film wiring layers, a reduction in the diameter of metal vias, and a reduction in interlayer thickness. The semiconductor device includes an insulating material layer including one or more semiconductor elements sealed with an insulating material containing no reinforced fibers, a plurality of metal thin-film wiring layers, metal vias that electrically connect the metal thin-film wiring layers together and electrodes of the semiconductor elements and the metal thin-film wiring layers together, and a warpage adjustment layer arranged on one principal surface of the insulating material layer to offset warpage of the insulating material layer to reduce warpage of the semiconductor device.

Semiconductor device and method for manufacturing same

A semiconductor device including: a support plate; a semiconductor chipmounted on one principal surface of the support platevia an adhesive layer, with the element circuit surface of the chip being directed upward; an insulation material layerthat seals the semiconductor chipand the periphery of the semiconductor chip; openings formed on an electrode arranged on the element circuit surface of the semiconductor chipin the insulation material layer; conductive portionsformed in the openings so as to be connected to the electrode of the semiconductor chip; a wiring layerformed on the insulation material layerso as to be connected to the conductive portionsand partially extending to the peripheral region of the semiconductor chip; and external electrodesformed on the wiring layer

Semiconductor device and method of manufacturing semiconductor device

A stacked semiconductor package includes a first semiconductor package including a first circuit board and a first semiconductor device mounted on the first circuit board; a second semiconductor package including a second circuit board and a second semiconductor device mounted on the second circuit board, the second semiconductor package being stacked on the first semiconductor package; and a heat transfer member provided on the first semiconductor device and a part of the first circuit board, the part being around the first semiconductor device.

Semiconductor package

A magnetic shielding package of a non-volatile magnetic memory element, including: a soft magnetic material support plate; a first insulating material layerformed on the support plate; a non-volatile magnetic memory elementfixed on the first insulating material layer; a second insulating material layerthat encapsulates the memory element and the periphery thereof; in the second insulating material layer, a wiring layer, a soft magnetic layerorand a conductive portionconnecting an electrode of the circuit surface of the memory element and the wiring layer; and a magnetic shield partcontaining a soft magnetic material arranged like a wall at a distance from a side surface of the memory element so as to surround the memory element side surface partially or entirely, the magnetic shield part being magnetically connected to the soft magnetic layer.

Magnetic shielding package of non-volatile magnetic memory element

A manufacturing method for a semiconductor device of the present invention includes: preparing a semiconductor wafer including an electrode formed therein; electrically connecting a first semiconductor element formed in a semiconductor chip and the electrode formed in the semiconductor wafer; filling a gap between the semiconductor wafer and the semiconductor chip with a first insulating resin layer; forming a second insulating resin layer on the semiconductor wafer; grinding the second insulating resin layer and the semiconductor chip until a thickness of the semiconductor chip reaches a predetermined thickness; forming a first insulating layer on the second insulating resin layer and the semiconductor chip; forming a line on the first insulating layer connected with a conductive material filled an opening in the first insulating layer and the second insulating resin layer to expose the electrode; and grinding the semiconductor wafer until a thickness of the semiconductor wafer reaches a predetermined thickness.

Manufacturing method for semiconductor device

A semiconductor package includes a support substrate arranged with a first aperture reaching a semiconductor device on a rear side, the semiconductor device is bonded via an adhesive to a surface of the support substrate, an insulating layer covering the semiconductor device, and wiring for connecting the semiconductor device and an external terminal through the insulating layer. The adhesive may form a part of the first aperture. In addition, a heat dissipation part may be arranged in the first aperture and a metal material may be filled in the first aperture.

Heat sink in the aperture of substrate

Embodiments of the invention provide an interconnect substrate capable of improving the connection reliability and yield of a semiconductor device, a method of manufacturing the interconnect substrate, and a semiconductor device using the interconnect substrate. An interconnect substrate according to an embodiment of the invention includes: a substrate; an electrode pad formed over the substrate; an insulating film (solder resist film) formed over the substrate; an opening formed in the insulating film, in which the upper surface of the electrode pad is exposed on the bottom surface of the opening and a metal film formed over the upper surface of the electrode pad and side surface of the insulating film in the opening. At least a portion of the edge of an upper surface of the metal film is higher than the other portions of the upper surface of the metal film.

Interconnect substrate, method of manufacturing interconnect substrate and semiconductor device

Provided is a semiconductor device having a substrate, a semiconductor chip flip-chip mounted on the substrate, and a stacked film provided in a gap between the substrate and the semiconductor chip. The stacked film is composed of a protective film covering the surface of the substrate, and an underfill film formed between the solder resist film and the semiconductor chip. The protective film is roughened on the contact surface brought into contacting said underfill film.

Growing community of inventors

Kanagawa, Japan

Kiminori Ishido