Kabushiki Kaisha Toshiba

Kiminobu Suzuki

Shigeo Ohshima

Hiroyuki Koinuma

Haruki Toda

Kazuhiro Yamada

Hiroshi Sahara

Koichi Magome

Masakazu Kiryu

Kenji Komatsu

Takamichi Arizono

A layout-data generation equipment includes a logic circuit designing section which designs a logic circuit based on information of the specifications of a semiconductor integrated circuit, a layout-data generation section which creates layout-data based on the logic circuit, a resistance information extraction section which extracts resistance information of a wire from the layout-data, a circuit simulation execution section which executes a circuit simulation, an identification section of current direction which identifies a direction of a current in the wire based on the resistance information of a wire and an execution result of the circuit simulation, a verification section which verifies whether layout-data of the wire breaks a design rule, the design rule being extracted from the information of the specifications of a semiconductor integrated circuit and the verification section generates this verification result, and a data output section which outputs the layout-data.

Layout data generation equipment of semiconductor integrated circuit, data generation method and manufacturing method of semiconductor device

The verification equipment of a semiconductor integrated circuit in the present invention is included with a circuit net list extraction section that extracts the net list of a circuit, a circuit simulation execution section that executes a circuit simulation, based on the extracted net list, a finite impedance judgment section that judges existence or nonexistence of finite impedances, a floating error terminal judgment section that judges existence or nonexistence of floating error terminals by measuring finite impedances, a true floating error terminal judgment section that adds any one of a P channel-type transistor and an N channel-type transistor to terminals of the circuit where it is judged that there are floating error terminals and calculates changes in potential at the terminals and adds the other of the P channel-type transistor and the N channel-type transistor to the terminals and calculates changes in potential at the terminals, and an output section that outputs a judgment result of the floating error terminal judgment section and a judgment result of the true floating error terminal judgment section.

Verification equipment of semiconductor integrated circuit, method of verifying semiconductor integrated circuit and process of manufacture of semiconductor device

A reference potential generating circuit according to this invention includes a first insulated gate field effect transistor of an enhancement type, a second insulated gate field effect transistor of a depletion type and a voltage dividing circuit. The source of the first insulated gate field effect transistor is connected to the ground terminal, and the drain and gate thereof are connected to one another. The drain of the second insulated gate field effect transistor is connected to the power source and the gate thereof is connected to a connection node which connects the drain and gate of the first insulated gate field effect transistor. The voltage dividing circuit is connected between the drain of the first insulated gate field effect transistor and the source of the second insulated gate field effect transistor.

Reference potential generating circuit

A flip-flop circuit has a power terminal set at 5 V, first and second output terminals, a latch section for charging one of the first and second terminals to 5 V and discharging the other one of the first and second terminals to 0 V in accordance with an input signal, a first MOS transistor having a current path connected between the power and first output terminals, a second MOS transistor for charging the gate of the first MOS transistor while the potential of the second output terminal is changed from 5 V to 0 V, and a capacitor for bootstrapping the gate potential of the first MOS transistor to turn on the first MOS transistor. The flip-flop circuit further includes a third MOS transistor, having a current path connected between the gate of the first MOS transistor and the first output terminal and a gate connected to the first output terminal, for charging the gate of the first MOS transistor when the gate potential of the first MOS transistor is dropped a predetermined level in comparison with that of the first output terminal.

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Yokohama, Japan

Kiminobu Suzuki