Nippon Telegraph and Telephone Corporation

Ntt Electronics Corporation

Kimikazu Sano

Hideyuki Nosaka

Koichi Murata

Munehiko Nagatani

Hiroyuki Fukuyama

Shogo Yamanaka

Makoto Nakamura

Hiroaki Katsurai

Masatoshi Tobayashi

Takatomo Enoki

Kiyomitsu Onodera

Eisuke Tsuchiya

Hiroyuki Ishii

Naoki Fujiwara

Kengo Horikoshi

Takashi Yamada

Hideaki Matsuzaki

Atsushi Kanda

Yoshifumi Muramoto

Yoshiho Maeda

Fumito Nakajima

Takahiko Shindo

Yasunobu Inabe

Miwa Mutoh

A reset signal is generated by a TIA circuit alone. In an embodiment, a transimpedance amplifier configured to convert a current signal into a voltage signal includes a transimpedance stage including an amplification stage constituted of a transistor with a grounded emitter, and a comparator configured to compare a collector voltage of the transistor with a reference voltage and output a reset signal.

Transimpedance amplifier

A reset signal is generated by a TIA circuit alone. In an embodiment, a transimpedance amplifier configured to convert a current signal into a voltage signal includes a transimpedance stage, a gain control circuit configured to compare an output of the transimpedance stage with a reference voltage and output a gain control voltage, and a reset signal output circuit configured to output a reset signal having a predetermined pulse width at a timing of at least one of a rise or a fall of the gain control voltage.

A method for manufacturing a monolithically integrated semiconductor optical integrated element comprising a DFB laser, an EA modulator, and a SOA disposed in a light emitting direction, comprising the step of forming a semiconductor wafer on which the elements are two-dimensionally arrayed and aligned the optical axes; cleaving the semiconductor wafer along a plane orthogonal to the light emitting direction to form a semiconductor bar including a plurality of the elements arranged one-dimensionally along a direction orthogonal to the light emitting direction such that the elements adjacent to each other share an identical cleavage end face as a light emission surface; inspecting the semiconductor bar by driving the SOA and the DFB laser through a connection wiring part together; and separating out the semiconductor bar after the inspection to cut the connection wiring part connecting the electrode of the SOA and the DFB laser to isolate from each other.

Semiconductor integrated optics element and production method therefor

A light receiving element includes a first substrate, a photodiode formed on a main surface of the first substrate, and a second substrate constituted by a semiconductor and adhered to a rear surface side of the first substrate by an adhesive layer formed from a resin adhesive. A light receiving element according to an embodiment includes a lens that is formed on the side of an adhesion surface of the second substrate, has a convex surface, and is disposed in a light receiving region of the photodiode. The light receiving side of the photodiode is oriented toward the side of the first substrate. The lens is disposed so that the convex surface thereof is oriented toward the side of a light receiving surface of the photodiode.

Light-receiving element and method for manufacturing element

An automatic gain control circuit () includes a peak detector circuit () that detects the peak voltage of the output signal from a variable gain amplifier (), an average value detection and output amplitude setting circuit () that detects the average voltage of the output signals from the variable gain amplifier () and adds a voltage &#xbd; the desired output amplitude of the variable gain amplifier () to the average voltage, and a high gain amplifier () that amplifies the difference between the output voltage of the peak detector circuit () and the output voltage of the average value detection and output amplitude setting circuit () and controls the gain of the variable gain amplifier () using the amplification result as a gain control signal. The peak detector circuit () includes transistors (Q, Q, Q), a current source (I), and a filter circuit. The filter circuit includes a series connection of a resistor (Ra) and a capacitor (C).

Automatic gain control circuit

A vector sum phase shifter includes a 90&#xb0; phase shifter () which generates an in-phase signal (VINI) and a quadrature signal (VINQ) from an input signal (VIN), a four-quadrant multiplier (I) which changes the amplitude of the in-phase signal (VINI) based on a control signal (CI), a four-quadrant multiplier (Q) which changes the amplitude of the quadrature signal (VINQ) based on a control signal (CQ), a combiner () which combines the in-phase signal (VINI) and the quadrature signal (VINQ), and a control circuit (). The control circuit () includes a voltage generator which generates a reference voltage, and a differential amplifier which outputs the difference signal between a control voltage (VC) and the reference voltage as the control signal (CI, CQ). The differential amplifier performs an analog operation of converting the control voltage (VC) into the control signal (CI, CQ) similar to a sine wave or a cosine wave.

Vector sum phase shifter, optical transceiver, and control circuit

A voltage generator () includes a resistor ladder including resistors (-) which divide a supplied voltage to generate a plurality of reference voltages, a resistor () provided between a power supply voltage (VCC) and one terminal of the resistor ladder, and a resistor () provided between a power supply voltage (VEE) and the other terminal of the resistor ladder.

Voltage generator, control circuit, vector sum phase shifter, and optical transceiver

In an automatic gain control circuit, a peak detection circuit detects and outputs the peak voltage of an output signal from a variable gain circuit. An average value detection/output amplitude setting circuit detects the average value voltage of an output signal from the variable gain circuit, and outputs a calculated voltage. An amplification circuit controls the gain of the variable gain circuit by amplifying the difference between the output voltages of the peak detection circuit and average value detection/output amplitude setting circuit. The number of base-emitter junctions of transistors on a path in the peak detection circuit from input ports which receive output signals from the variable gain circuit to an output port which outputs a voltage to the amplification circuit is equal to the number of base-emitter junctions of transistors on a path in the average value detection/output amplitude setting circuit.

In a signal output circuit, an input buffer externally receives a single-phase switching instruction signal to switch a state of the output circuit a shutdown disable state or a shutdown enable state, and converts and outputs the single-phase switching instruction signal into a differential switching instruction signal. A generation control circuit outputs a generation control signal for controlling generation of a control voltage in the control voltage generation circuit based on the differential switching instruction signal. A control voltage generation circuit outputs the control voltage upon changing a value of the control voltage in accordance with a logic of the single-phase switching instruction signal. An output circuit externally receives a differential input signal, outputs a differential output signal upon impedance-converting the differential input signal, and switches between the shutdown disable state and the shutdown enable state of the differential input signal.

Signal output circuit

Two D flip-flops (D-FF, D-FF) output two half-rate signals (D, D) by dividing a digital input signal (D) into two signals and retiming them based on a clock signal (CLK) and a negative-phase clock signal (CLKB). First and second switches (S, S) are driven by the two half-rate signals (D, D). Third and fourth switches (S, S) are driven by a select signal SW and a negative-phase select signal SWB that have the same frequency as that of the clock signal (CLK) but a different phase from that of the clock signal (CLK). The current supplied from a current source () to a load () thus becomes a current signal corresponding to a conversion frequency twice the frequency of the clock signal (CLK).

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Kanagawa, Japan

Kimikazu Sano