Tokyo Electron Limited

Kimihiro Matsuse

Hayashi Otsuki

Tsuyoshi Takahashi

Kazuya Okubo

Tsuyoshi Hashimoto

Sumi Tanaka

Kunihiro Tada

Hideki Lee

Hatsuo Osada

Masato Koizumi

Sylvain Ballandras

Tomohide Minami

Mitsuhiro Tachibana

Thierry LaRoche

Kentaro Oshimo

Kimiya Aoki

Sakae Nakatsuka

Tomonori Narita

Jacques Berg

An apparatus and method for real-time sensing of properties in industrial manufacturing equipment are described. The sensing system includes first plural sensors mounted within a processing environment of a semiconductor device manufacturing system, wherein each sensor is assigned to a different region to monitor a physical or chemical property of the assigned region of the manufacturing system, and a reader system having componentry configured to simultaneously and wirelessly interrogate the plural sensors. The reader system uses a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the physical or chemical property at each assigned region of the system.

Apparatus and method for real-time sensing of properties in industrial manufacturing equipment

A method of forming a refractory metal film doped with III or V group elements. The first process gas is supplied from a first gas source through a first gas introducing member to and through a gas supply mechanism toward a substrate within a processing vessel. The second process gas is supplied from a second gas source through a second gas introducing member to and through the gas supply mechanism toward the substrate within the processing vessel. The processing vessel is purged by evacuating the processing vessel by an evacuating mechanism, while supplying the inert gas from a third source through a third gas introducing member to and through the gas supply mechanism into the processing vessel. The supplying the first process gas and the supplying the second process gas are repeated with the supplying the purging gas being carried out between supplying the first and second gases performed so that residual gas present in the processing vessel after performing the supplying of the first and second process gases is reduced to a level of 1 to 30% based on the entire capacity of the processing vessel.

Method of forming a metal film for electrode

A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiClgas, a silicon hydride gas and NHgas are used as source gases for forming the TiSiN film by the thermal CVD process. TiClgas, a silicon hydride gas, Hgas and Ngas are used as source gases for forming a TiSiN film by the plasma CVD process.

TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system

Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film

There is provided a method of forming a barrier metal which is designed to be interposed between a metal layer and an insulating layer, both constituting a multi-layered structure of semiconductor device, the method comprising the steps of positioning a substrate having the insulating layer formed thereon at a predetermined position inside a processing vessel forming a processing space, and alternately introducing a gas containing a refractory metallic atom, a gas containing Si atom and a gas containing N atom into the processing vessel under a predetermined processing pressure, thereby allowing a refractory metal nitride or a refractory metal silicon nitride to be deposited on the insulating layer by way of atomic layer deposition.

Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film

A method of forming a barrier metal film formed of a nitride film including tungsten by thermal CVD. The method includes positioning a substrate in a processing vessel and forming a WSi film on one side of the substrate by supplying a process gas including WFgas and at least one of SiRgas, SiHClgas and SiHgas into the processing vessel while a processing pressure in the processing vessel is maintained. The method also includes shutting off the supplying of the process gas into the processing vessel and completely removing the process gas from the processing vessel by supplying a purging gas into the processing vessel after the shutting off the supplying. The WSi film is nitrided by supplying NHgas or MMH gas into the processing vessel from which the process gas has been removed, to form a WSixNy film.

Method of forming semiconductor wiring structures

A film forming apparatus and method of the present invention include a substrate holding section for holding a plurality of substrates in a plane within a chamber, first and second process gas discharge sections provided opposite to the substrate holding section to discharge first and second process gases, a rotation mechanism for rotating the substrate holder, and a heater for heating the substrates. While the substrates are rotating as the substrate holding section rotates, the substrate holding section, first and second mono atomic layers are alternately stacked on the corresponding substrates. A compound film is therefore formed through a reaction involved under heating.

Film forming apparatus and film forming method

A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film on the poly-crystal silicon layer; and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.

Method of forming a laminated structure to enhance metal silicide adhesion on polycrystalline silicon

A processing apparatus includes a processing chamber, a support mechanism provided in the processing chamber to support a wafer having an underlying film formed on a major surface and adjacent side face, and a supply member provided at the processing chamber and spaced from the support mechanism, to supply an incoming gas into the processing chamber. A gas carrying mechanism is provided for selectively sending a film forming gas and etching gas to the gas supply member. A main film is formed on a portion of an underlying film formed on the wafer supported on the support mechanism, by using the film forming gas supplied from the gas supply member. A portion of the underlying film, which is exposed, not covered with the main film, is etched away by the etching gas supplied from the gas supplied member.

Method and apparatus for forming a film on an object to be processed

A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.

Laminated structure and a method of forming the same

Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to the process chamber, followed by supplying second film-forming gases into the process chamber to form a second pre-coating film on the first pre-coating film. A semiconductor wafer is loaded into the process chamber. Then, the first gases are supplied into the process chamber while heating the process chamber so as to form a first layer on the wafer, followed by supplying the second gases into the process chamber so as to form a second layer on the first layer. A silane gas is supplied into the process chamber to permit silicon material to be deposited on the surface of the second layer stacked on the first layer. Finally, the wafer having the first and second multi-film is unloaded out of the process vessel.

Apparatus for forming laminated thin films or layers

One of the disclosed processing apparatus includes a processing vessel having an inner processing space defined by a ceiling portion, a bottom portion, and side walls and capable of being evacuated to a predetermined vacuum, a mounting table which has a first mounting surface for mounting the object thereon and a second mounting surface facing an opposite side to which the first mounting surface faces, which is supported by the ceiling portion of the processing vessel, and which extends toward the bottom portion of the processing vessel in such a way that the first and second mounting surfaces face the side walls of the processing vessel, a process gas supply mechanism, for supplying a process gas to the inner processing space, and a loading/unloading portion having an opening formed in the bottom portion of the processing vessel and an open/close device for opening/closing the opening, for loading/unloading the object into/from the processing vessel.

Processing apparatus and processing system

A first tungsten silicide layer relatively rich in silicon is formed on an object by using a process gas having a phosphorus atom-containing gas added thereto, and a second tungsten silicide layer relatively rich in tungsten is formed on the first tungsten silicide layer, so that a tungsten silicide film is formed. The addition amount of the phosphorus atom-containing gas to the process gas is 0.02 to 0.2% by volume &ldquo;in terms of a phosphine gas&rdquo;.

Method of forming tungsten silicide film

Method and apparatus for forming laminated thin films or layers

A heat treatment apparatus includes a treatment container having a reaction chamber, and a gas chamber a mount table provided in the treatment container for mounting thereon a wafer such that an upper surface of the wafer is exposed to the reaction chamber, and an annular clamp member provided in the reaction chamber, movable between a clamp position in which it contacts the peripheral edge of the wafer in circular line contact and a waiting position in which it is separated from the wafer. The line contact prevents leakage of the process gas from the reaction chamber through a clearance between the clamp member and the wafer.

Growing community of inventors

Inagi, Japan

Kimihiro Matsuse