Tokyo Electron Limited

Kimihiro Fukasawa

Wataru Ozawa

Kazuhiro Kanaya

Tatsuya Ogi

Norihiko Amikura

Risako Miyoshi

Kazunori Kazama

Noriaki Shimizu

Yoshiyuki Kato

Tatsuya Miura

Jun Shoji

A temperature control method is provided for controlling a plasma processing apparatus that is capable of changing a temperature setting for each step of a plasma process including multiple steps. The method includes a transfer step of performing an entry process for transferring a workpiece into a processing chamber of the plasma processing apparatus and/or an exit process for transferring the workpiece out of the processing chamber, a process execution step of executing the plasma process including multiple steps, and a temperature control step of performing a first temperature control and/or a second temperature control. The first temperature control includes controlling a temperature to a temperature setting of a next process according to a time execution of the plasma process is completed, and the second temperature control includes controlling the temperature to the temperature setting of the next process in parallel with the entry process and/or the exit process.

Temperature control method, control apparatus, and plasma processing apparatus

Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. As a result, the non-uniformity in the plasma processing between the substrates caused by the change of processing atmosphere is suppressed.

Plasma processing apparatus, plasma processing method, and storage medium

It is possible to prevent processing gases from being mixed when alternately supplying the processing gases while alternately switching the processing gases and to suppressed a transient phenomenon more efficiently as compared to conventional cases. When supplying at least two kinds of processing gases (e.g., a CFgas and a CFgas) into a processing chamber while alternately switching the at least two kinds of processing gases during a plasma process on a wafer, the supply of each processing gas can be alternately turned on and off by alternately setting an instruction flow rate of a mass flow controller to be a predetermined flow rate and a zero flow rate while a downstream opening/closing valve provided at a downstream side of the mass flow controller is open.

Plasma processing apparatus and gas supply method therefor

A substrate processing system allows to reduce the number of works that should be done by a software engineer. The systemincludes a substrate processing apparatus; a substrate processing controllerfor controlling the substrate processing apparatus; and a serverfor storing therein commands, i.e., instructional statements, for defining an operation of each device. The substrate processing controllerhas a RAMserving as a work space for creating a macro file corresponding to each of processes divided from the whole substrate processing or for changing the content of a macro file; and an executorcomposed of, e.g., CPU for executing a process sequence macro obtained by a combination of the created macro files. The user creates a macro file describing a sequential operation of each process or changes the content of a macro file by arranging the stored commands.

System and method for processing a substrate and program therefor

Growing community of inventors

Miyagi, Japan

Kimihiro Fukasawa