Mitsubishi Gas Chemical Company, Inc.

Kimihiro Aoyama

Nobuo Tajima

Hiroshi Matsunaga

Takahiro Kikunaga

Yasuyoshi Nakayasu

Tetsuhiko Mizusaka

Hiroaki Horie

Yasuo Gotoh

Provided is a cellulose solution (a composition) in which decomposition of cellulose does not easily proceed even if heated. Further, provided is a method for producing a cellulose fiber excellent in mechanical strength. The composition includes cellulose and a compound represented by the following formula (1), a concentration of 1-methylimidazolium chloride being 300 ppm or less on a mass basis with respect to the compound represented by the formula (1). In the formula (1), R is an alkyl group having 2 to 6 carbon atoms, and Me is a methyl group.

Composition and method for producing cellulose fiber

The present invention can provide a cleaning solution containing 0.2-20 mass % of an amine compound (A), 40-70 mass % of a water-soluble organic solvent (B), and water, wherein the amine compound (A) contains at least one selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane, and bis(hexamethylene)triamine, and the water-soluble organic solvent (B) has a viscosity of 10 mPa&#xb7;s or less at 20&#xb0; C. and a pH of 9.0-14.

Cleaning solution for removing dry etching residue and method for manufacturing semiconductor substrate using same

Liquid cleaning compositions for removing a titanium nitride hard mask while suppressing damage to copper, a copper alloy, cobalt or a cobalt alloy upon fabricating a semiconductor device, a cleaning method using the same, and a method for fabricating a semiconductor device, which comprise hydrogen peroxide at 1-30% by mass, potassium hydroxide at 0.01-1% by mass, aminopolymethylene phosphonic acid at 0.0001-0.05% by mass, a compound having a group 13 element at 0.00005-0.5% by mass, and water.

Liquid composition for cleaning semiconductor device, method for cleaning semiconductor device, and method for fabricating semiconductor device

The objects of the present invention are to provide a treatment liquid able to inhibit pattern collapse in a microstructure such as a semiconductor device or a micromachine, as well as a method of manufacturing a microstructure using the same. Means to solve the problems is to treat a microstructure with a treatment liquid for inhibiting pattern collapse in a metal microstructure comprising an alkylphosphonic acid or salt thereof in which said alkyl moiety contains 6 to 18 carbon atoms, water, and a water soluble solvent.

Growing community of inventors

Tokyo, Japan

Kimihiro Aoyama