Sanyo Electric Co., Ltd.

Tottori Sanyo Electric Co., Ltd.

Kimihiko Nagami

Tetsuro Sawai

Takashi Yamada

Koji Yoshida

Kaoru Taketa

Takao Yamauchi

Hiroshi Inamura

Akihito Nagamatsu

Masaki Endo

Togo Morifuji

Sayaka Hiura

Chiaki Kobayashi

Daisuke Sumi

Syunsuke Yamaura

Seiichi Bamba

Haruo Nakano

A pressure sensor comprising a plurality of sensor parts arranged in matrix. A first electrode being connected with first wiring and a second electrode being connected with second wiring are disposed oppositely through a cavity part in the sensor part. The second electrode bends to the first electrode side in response to a pressure from a specimen and touches the first electrode upon application of a pressure of a specified level or above. When the specimen is pressed against a pressure detecting region, both electrodes touch each other at a sensor part corresponding to a protrusions of the specimen and are separated at a sensor part corresponding to a recess. When a scanning signal is fed from a scanning circuit to one wiring and presence of a signal flowing through the second wiring is detected by a sensing circuit, a pressure being applied to each sensor part can be detected. Furthermore, the shape is detected by feeding the scanning signal from the scanning circuit to each first wiring sequentially and scanning the pressure detecting region generally.

Pressure sensor and method for fabricating the same

Disclosed is a display unit employing an organic electroluminescence element of an active matrix system, which has high picture quality and requires a low fabrication cost. The display unit comprises an organic electroluminescence element (14) and a bipolar transistor (11) stacked on the organic electroluminescence element (14). The organic electroluminescence element (14) comprises a hole transport layer (4), a luminescent layer (5) and an electron transport layer (6). The bipolar transistor (11) comprises a collector region layer (6), a base region layer (7) and an emitter region layer (8). The collector region layer (6) of the bipolar transistor (11) and the electron transport layer (6) of the organic electroluminescence element (14) are formed by a common single layer.

Display unit having transistor of organic semiconductor stacked on

An active device such as an HEMT is formed on a GaAs substrate, and characteristics of this active device formed are measured. A circuit pattern of a passive circuit device including a serial microstrip line is simulated on the basis of the results of this measurement, and a circuit pattern obtained by the simulation is directly drawn on a substrate to form the passive circuit device, thereby to fabricate an MMIC. Accordingly, the passive circuit device is formed in conformity with the characteristics of the active device for each chip. As a result, the variation in characteristics of the active device is canceled, to obtain an MMIC superior in matching.

Method of fabricating MMIC semiconductor integrated circuits using the

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Tottori, Japan

Kimihiko Nagami