Sanyo Electric Co., Ltd.

Kabushiki Kaisha Toshiba

Kimihide Saito

Hiroyuki Watanabe

Takashi Noma

Hideki Mizuhara

Yuuichi Mikata

Kazuo Okada

Tsuyoshi Mizuno

Masaji Hara

Ryo Kawai

Yoichi Kanuma

Film coating unit has a substrate holder for holding a wafer, a coating solution discharge nozzle, and anti-drying boards opposed to a surface of the wafer. The coating solution is applied to the surface of the wafer in a direction from a front end toward a rear end of the wafer while relatively moving the substrate holder with respect to the coating solution discharge nozzle. During that time, the anti-drying boards are disposed at height of maximum 2 mm from the surface of the wafer so as to form dense atmosphere of a solvent between the surface of the wafer and the anti-drying board. Thereby the coating solution on or over the surface of the wafer is restrained from being dried and a coating film is formed with even thickness on or over the surface of the wafer.

Film coating unit and film coating method

A barrier film of a SiON film is formed below an interlayer insulating film which is a single layer film or laminated film of an TEOS film or SOG film covering a floating gate and control gate . The SiON film which is good in moisture blocking but poor in coverage is covered with another TEOS film which is better in coverage than the SiON film, thereby improving the barrier property of the barrier film. Such a configuration prevents moisture or H atoms contained in the TEOS film or SOG film from being diffused and trapped by the tunneling oxide film , thereby improving the trap-up rate and hence endurance characteristic and extending the operation life of a memory cell.

Non-volatile semiconductor memory device with barrier and insulating films

A semiconductor device including an interlayer insulation film is obtained, superior in planarization, insulation characteristics, and adhesion, suitable for microminiaturization of an element, and without inducing the problem of signal delay. In the fabrication method of this semiconductor device, an interconnection is formed on semiconductor substrate. Then, a first insulation film is formed so as to be in contact on the interconnection. Impurities are introduced into the first insulation film under a condition where the impurities arrive at least at the interconnection. As a result, the first insulation film is reduced in moisture and becomes less hygroscopic. Therefore, the insulation characteristics of the first insulation film is improved. When an SOG film superior in planarization is employed as the first insulation film, it is possible to directly form that SOG film on an underlying interconnection. In addition, the adhesion intensity between the first insulation film and the interconnection is improved. Furthermore, the distance between the pattern in the underlying interconnection can be reduced. Also, the capacitance between the interconnections is reduced.

Fabrication method of semiconductor device including insulation film

Growing community of inventors

Gunma, Japan

Kimihide Saito