Fujifilm Corporation

The University of Tokyo

Udc Ireland Limited

Kimiatsu Nomura

Tetsuro Mitsui

Tetsu Kitamura

Eiji Fukuzaki

Mitsumasa Hamano

Katsuyuki Yofu

Yoshihisa Usami

Tetsuya Watanabe

Junichi Takeya

Toshihiro Okamoto

Hiroaki Tsuyama

Hiroki Sugiura

Masashi Koyanagi

Hideyuki Suzuki

Masayuki Hayashi

Yoshinori Kanazawa

Masatoshi Yumoto

Rui Shen

Toshihiro Ise

Tomoaki Yoshioka

Wataru Sotoyama

Koji Takaku

Saki Takada

Yosuke Yamamoto

Toru Watanabe

Yuzo Nagata

Toshiaki Aoai

Katsumi Kobayashi

Kazumi Nii

Koji Wariishi

Michio Ono

Yoichi Maruyama

Naoyuki Hayashi

Yuki Hirai

Wataru Kikuchi

Yukio Tani

Ryo Nishio

Ryo Hamasaki

Masashi Kaneko

The invention provides a photoelectric conversion element including a photoelectric conversion film excellent in vapor deposition suitability and exhibiting excellent photoelectric conversion efficiency in a case where the photoelectric conversion film is a thin film, an optical sensor, an imaging element, and a compound. The photoelectric conversion element of the embodiment of the invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1). 

Photoelectric conversion element, optical sensor, imaging element, and compound

An object of the present invention is to provide a thermoelectric conversion element which includes a p-type thermoelectric conversion layer and an n-type thermoelectric conversion layer, has excellent power generation capacity and durability, and inhibits a variation in power generation capacity between lots. The thermoelectric conversion element of the present invention is a thermoelectric conversion element having a p-type thermoelectric conversion layer and an n-type thermoelectric conversion layer electrically connected to the p-type thermoelectric conversion layer, in which the p-type thermoelectric conversion layer contains a nanocarbon material and at least one kind of component selected from the group consisting of an onium salt and an inorganic salt, the n-type thermoelectric conversion layer contains a nanocarbon material and an onium salt, and a difference between an ionization potential of the p-type thermoelectric conversion layer and an ionization potential of the n-type thermoelectric conversion layer is equal to or smaller than 0.15 eV.

Thermoelectric conversion element

The present invention provides a photoelectric conversion element exhibiting excellent responsiveness, and excellent photoelectric conversion efficiency in a case where the photoelectric conversion film is a thin film, an optical sensor, an imaging element which include the photoelectric conversion element, and a compound. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) and having a structure represented by Formula (2). 

An object of the present invention is to provide a semiconductor layer (n-type semiconductor layer) which demonstrate an excellent thermoelectric conversion performance and exhibits n-type characteristics. Another object of the present invention is to provide a thermoelectric conversion layer formed of the n-type semiconductor layer and a composition for forming an n-type semiconductor layer. Still another object of the present invention is to provide a thermoelectric conversion element, which has the thermoelectric conversion layer as an n-type thermoelectric conversion layer, and a thermoelectric conversion module. The n-type semiconductor layer of the embodiment of the present invention contains a nanocarbon material and an onium salt represented by a specific structure.

n-Type semiconductor layer, thermoelectric conversion layer, thermoelectric conversion element, thermoelectric conversion module, and composition for forming n-type semiconductor layer

An object of the present invention is to provide an n-type thermoelectric conversion layer, which has a high power factor and exhibits excellent performance stability, a thermoelectric conversion element including the n-type thermoelectric conversion layer, and a composition for forming an n-type thermoelectric conversion layer used in the n-type thermoelectric conversion layer. The n-type thermoelectric conversion layer of the present invention contains carbon nanotubes and an amine compound which is represented by General Formula (1) or (2) and has a C log P value of 2.0 to 8.2. 

N-type thermoelectric conversion layer, thermoelectric conversion element, and composition for forming N-type thermoelectric conversion layer

A thermoelectric conversion layer contains carbon nanotubes and a surfactant, and in an upper portion and a lower portion and/or a side face end surface and a center, a mass ratio obtained by dividing the carbon nanotubes by the surfactant is higher in the upper portion and/or the end surface than in the other portions. A layer which contains carbon nanotubes and a surfactant and will become a thermoelectric conversion element is formed, the layer is washed with a washing agent which dissolves the surfactant but does not dissolve the carbon nanotubes. Accordingly, provided is a thermoelectric conversion element and a thermoelectric conversion module, each having not only high adhesiveness between the substrate and the thermoelectric conversion layer but also excellent thermoelectric conversion performance; and methods for manufacturing the thermoelectric conversion element and the thermoelectric conversion module.

Thermoelectric conversion element, thermoelectric conversion module, method for manufacturing thermoelectric conversion element, and method for manufacturing thermoelectric conversion module

Provided are a coating solution for a non-light-emitting organic semiconductor device having high carrier mobility that contains a compound represented by Formula (2) and a solvent having a boiling point of equal to or higher than 100&#xb0; C., an organic transistor, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a method for manufacturing an organic transistor, and a method for manufacturing an organic semiconductor film.  (In Formula (2), Rand Reach independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkoxy group and may have a substituent, and an aromatic portion in Formula (2) may be substituted with a halogen atom.)

Coating solution for non-light-emitting organic semiconductor device, organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor device, material for organic transistor, method for manufacturing organic transistor, and method for manufacturing organic semiconductor film

Provided are an organic transistor with high carrier mobility having a semiconductor active layer containing a compound which is represented by the following formula and has a molecular weight of equal to or less than 3,000, a compound, an organic semiconductor material for a non-light-emitting organic semiconductor device, a material for an organic transistor, a coating solution for a non-light-emitting organic semiconductor device, a method for manufacturing an organic transistor, a method for manufacturing an organic semiconductor film, an organic semiconductor film for a non-light-emitting organic semiconductor device, and a method for manufacturing an organic semiconductor material.  (X represents an oxygen, sulfur, selenium, or tellurium atom or NR; Y and Z each represents CR, an oxygen, sulfur, selenium, or nitrogen atom, or NR; a ring containing Y and Z is an aromatic heterocycle; any one of Rand Rand the aromatic heterocycle containing Y and Z or any one of Rand Rand a benzene ring may be bonded to each other through a specific divalent linking group; R, R, and Rto Reach represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group; Rand Reach represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or heteroaryl group; and each of m and n is an integer of 0 to 2).

Organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor device, material for organic transistor, coating solution for non-light-emitting organic semiconductor device, method for manufacturing organic transistor, method for manufacturing organic semiconductor film, organic semiconductor film for non-light-emitting organic semiconductor device, and method for synthesizing organic semiconductor material

Coating solution for non-light-emitting organic semiconductor device, organic transistor, compound, organic semiconductor material for non-light-emitting organic semiconductor device, material for organic transistor,  method for manufacturing organic transistor, and method for manufacturing organic semiconductor film

An organic electroluminescent element including a substrate, a pair of electrodes including an anode and a cathode, disposed on the substrate, and at least one organic layer including a light emitting layer, disposed between the electrodes, in which a compound represented by the following formula (I) is contained in any layer of the at least one organic layer. The organic electroluminescent element has high luminous efficiency and a strong effect of improving the durability by driving aging: wherein X, A, A, A, A, and Rto Rare as defined herein.

Organic electroluminescent element, material for organic electroluminescent element, and light emitting device, display device and lighting device each using organic electroluminscent element

An organic electroluminescent element using a compound represented by the following general formula emits dark blue light and has a small change in the chromaticity during luminance modulation: wherein each of Rto Rrepresents a hydrogen atom or a substituent; Ato Arepresent CRor N; L and X each independently represent any one of CRR, NR, O, S, and SiRR; and each of Rto Rrepresents a hydrogen atom or a substituent.

Organic electroluminescent element, light-emitting material for organic electroluminescent element, and light-emitting device, display device, and illumination device using said element

A thermoelectric conversion element () having, on a substrate (), a first electrode (), a thermoelectric conversion layer (), and a second electrode, wherein a nano conductive material and a low band gap material are contained in the thermoelectric conversion layer (); an article for thermoelectric power generation and a power supply for a sensor using the thermoelectric conversion element (); and a thermoelectric conversion material containing the nano conductive material and the low band gap material.

Thermoelectric conversion material, thermoelectric conversion element, article for thermoelectric power generation and power supply for sensor

A photoelectric conversion element, having: an electrically-conductive support; a photoconductor layer having a semiconductor fine-particle layer adsorbed a dye; a charge transfer layer containing an electrolyte; and a counter electrode; which are provided on one side of the support in this order, in which the dye has at least one terdentate ligand having at least one acidic group; at least one ligand coordinating to a metal atom M has an sp2 carbon atom; a cyclic group binds to the sp2 carbon atom; a specific substituent R is substituted at an atom of &#x3b1;- or &#x3b2;-position to the atom of the cyclic group directly binding to the sp2 carbon atom; and with the metal atom M, an atom G1 of the &#x3b1;- or &#x3b2;-position, and an atom G2 of the substituent R, an angle &#x3b8; (&#x2220;MG1G2) is 150&#xb0; or less.

Metal complex dye, photoelectric conversion element, dye-sensitized solar cell, dye solution, and compound

A photoelectric conversion element includes a transparent conductive film, a conductive film, and a photoelectric conversion layer and an electron-blocking layer disposed between the transparent conductive film and the conductive film. The photoelectric conversion layer includes a condensed polycyclic hydrocarbon which contains at least 5 benzene rings, of which a total number of rings is 7 or more and which contains no carbonyl group. The electron-blocking layer includes a compound A having a residue after removal of at least one group of Rto Rfrom a compound represented by general formula (A) and having a glass transition point (Tg) of 200&#xb0; C. or more. The photoelectric conversion element exhibits high photoelectric conversion efficiency and low dark current characteristics even after heating treatment, and can be manufactured with high productivity.

Photoelectric conversion element and method of using the same, image sensor, and optical sensor

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Kanagawa, Japan

Kimiatsu Nomura