Applied Materials, Inc.

Novellus Systems Incorporated

Kimberly Branshaw

Padmanabhan Krishnaraj

Nasreen Gazala Chopra

Alan W Collins

Robert Duncan

Joseph D'Souza

Bart Jan Van Schravendijk

Hui-Jung Wu

Keith Fox

Kaushik Chattopadhyay

Tom Mountsier

Stability of an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer is critical for successful integration. UV-resistant diffusion barrier layers are formed by depositing the layer in a hydrogen-starved environment. Diffusion barrier layers can be made more resistant to UV radiation by thermal, plasma, or UV treatment during or after deposition. Lowering the modulus of the diffusion barrier layer can also improve the resistance to UV radiation.

Methods for reducing UV and dielectric diffusion barrier interaction

Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF ), oxygen (O ), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

Methods and apparatus for producing stable low k FSG film for HDP-CVD

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Santa Clara, CA, United States of America

Kimberly Branshaw