At&s (china) Co. Ltd.

At&s Austria Technologie & Systemtechnik Aktiengesellschaft

Kim Liu

Seok Kim Tay

Mikael Tuominen

Henry Guo

Nick Xin

Artan Baftiri

Howard Li

A method of manufacturing a component carrier is described. The method includes forming a stack with at least one electrically conductive layer structure and at least one electrically insulating layer structure, and reducing an amount of solvent in a fiber-free dielectric layer, which is directly connected to a metal layer, so that the dielectric layer with reduced amount of solvent remains at least partially uncured.

Component carrier with low-solvent fiber-free dielectric layer

A method of manufacturing a component carrier includes providing a laminated stack with at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, at least partially covering a component with a transition layer having a thickness in a range from 0.5 nm to 1 μm, and assembling the component with the stack.

Component carrier having component covered with ultra-thin transition layer

A component carrier with a stack having at least one electrically conductive layer structure and a plurality of electrically insulating layer structures and a component embedded in the stack. The plurality of electrically insulating layer structures include a first dielectric structure and a second dielectric structure differing concerning at least one physical property.

Component carrier comprising dielectric structures with different physical properties

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Kunshan, China

Kim Liu